SEMTECH_ELEC MMBTSC5345W

MMBTSC5345W
NPN Silicon Epitaxial Planar Transistor
for RF amplifier
The transistor is subdivided into three groups, R,
O and Y, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
4
V
Collector Current
IC
20
mA
Power Dissipation
Ptot
200
mW
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
- 55 + 150
O
C
C
Characteristics at Tamb = 25 OC
Parameter
DC Current Gain
at VCE = 6 V, IC = 1 mA
Current Gain Group
Collector Base Breakdown Voltage
at IC = 10 µA
Collector Emitter Breakdown Voltage
at IC = 5 mA
Emitter Base Breakdown Voltage
at IE = 10 µA
Collector Cutoff Current
at VCB = 30 V
Emitter Cutoff Current
at VEB = 4 V
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
Transition Frequency
at VCE = 6 V, -IE = 1 mA
Collector Output Capacitance
at VCB = 6 V, f = 1 MHz
R
O
Y
Symbol
Min.
Typ.
Max.
Unit
hFE
hFE
hFE
40
70
120
-
80
140
240
-
V(BR)CBO
30
-
-
V
V(BR)CEO
20
-
-
V
V(BR)EBO
4
-
-
V
ICBO
-
-
0.5
µA
IEBO
-
-
0.5
µA
VCE(sat)
-
-
0.3
V
fT
-
550
-
MHz
COB
-
1.4
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/05/2006
MMBTSC5345W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/05/2006