MMBTSC945W NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 150 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Cutoff Current at VCB = 40 V Emitter Cutoff Current at VEB = 3 V Collector Saturation Voltage at IC = 100 mA, IB = 10 mA Gain Bandwidth Product at VCE = 6 V, IC = 10 mA Output Capacitance at VCB = 6 V, f = 1 MHz Noise Figure at VCE = 6 V, IE = 0.5 mA, f = 1 KHz, RS = 500 Ω R O Y P L Symbol Min. Typ. Max. Unit hFE hFE hFE hFE hFE 40 70 120 200 350 - 80 140 240 400 700 - V(BR)CBO 60 - - V V(BR)CEO 50 - - V V(BR)EBO 5 - - V ICBO - - 0.1 µA IEBO - - 0.1 µA VCE(sat) - - 0.3 V fT - 300 - MHz COB - 2.5 - pF NF - 4 - dB SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 12/09/2006 MMBTSC945W SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 12/09/2006