MMBTSD471 NPN Silicon Epitaxial Planar Transistor Audio Frequency Power amplifier applications. The transistor is subdivided into three group O, Y and G according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. SOT-23 Plastic Package Absolute Maximum Ratings (Ta=25 OC) Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 1 A Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBTSD471 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit O hFE 90 - 180 - Y hFE 135 - 270 - G hFE 200 - 400 - V(BR)CEO 30 - - V V(BR)CBO 40 - - V V(BR)EBO 5 - - V ICBO - - 0.1 µA VCE(sat) - - 0.5 V VBE(sat) - - 1.2 V COB - 18 - pF fT - 130 - MHz DC Current Gain at VCE=1V, IC=100mA Current Gain Group Collector Emitter Breakdown Voltage at IC=10mA Collector Base Breakdown Voltage at IC=100µA Emitter Base Breakdown Voltage at IE=100µA Collector Cutoff Current at VCB=30V Collector Saturation Voltage at IC=1.0A, IB=100mA Base Saturation Voltage at IC=1.0A, IB=100mA Collector Output Capacitance at VCB=6V, f=1MHz Transition Frequency at VCE=6V, IC=10mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005