MMBTSA1576 PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups Q, R and S according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Feature SOT-23 Plastic Package ․Excellent hFE linearity Absolute Maximum Ratings (Ta = 25 OC) Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 150 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBTSA1576 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Q hFE 120 - 270 - R hFE 180 - 390 - S hFE 270 - 560 - -ICBO - - 0.1 µA -IEBO - - 0.1 µA -VCE(sat) - - 0.5 V -V(BR)CBO 60 - - V -V(BR)CEO 50 - - V -V(BR)EBO 6 - - V fT - 140 - MHz Cob - 4.0 5 pF DC Current Gain at –VCE=6V, -IC=1mA Collector Cutoff Current at –VCB=60V Emitter Cutoff Current at –VEB=6V Collector Saturation Voltage at –IC=50mA, -IB=5mA Collector Base Breakdown Voltage at –IC=50µA Collector Emitter Breakdown Voltage at –IC=1mA Emitter Base Breakdown Voltage at –IE=50µA Transition Frequency at –VCE=12V, -IE=2mA, f=30MHz Output Capacitance at –VCB=12V, f=1MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005