MMDT3904 DUAL SURFACE MOUNT NPN TRANSISTORS This device contains two electrically-isolated 2N3904 NPN transistors. The two transistors have well matched hFE and are encapsulated in an ultrasmall SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. SOT- 363 4 5 FEATURES 6 3 Electrically Isolated Dual NPN Switching Transistor 2 Lead-Free Plating (100% matte tin finish) 1 6 5 4 1 2 3 APPLICATIONS General Purpose Amplifier Applications Hand-Held Computers, PDAs Device Marking Code: S1A MAXIMUM RATINGS TJ = 25°C Unless otherwise noted Rating Symbol Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage V CEO 40 V Emitter-Base Voltage Voltage VEB 6.0 V Collector Current IC 200 mA Total Power Dissipation (Note 1) PD 200 mW Operating Junction Temperature Range TJ -55 to +150 °C Storage Temperature Range Tstg -55 to +150 °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (Note 1) Symbol Value Units R thja 625 °C/W Note 1. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout 9/20/2005 Page 1 www.panjit.com MMDT3904 ELECTRICAL CHARACTERISTICS (Each Transistor) TJ = 25°C Unless otherwise noted Parameter Min Typ Max Units Collector-Emitter Breakdown Voltage V (BR)CEO I C = 1.0mA 40 - - V Collector-Base Breakdown Voltage V (BR)CBO I C = 10uA 60 - - V V (BR)EBO I E = 10uA 6.0 - - V Symbol Emitter-Base Breakdown Voltage Conditions Collector Cutoff Current ICEX VCE= 30V, V EB= 3.0V - - 50 nA Base Cutoff Current IBL VCE= 30V, V EB= 3.0V - - 50 nA I C = 0.1mA, V CE= 1.0V 40 - - I C = 1.0mA, V CE= 1.0V 70 - - I C = 10mA, V CE= 1.0V 100 - 300 I C = 50mA, V CE= 1.0V 60 - - I C = 100mA, V CE= 1.0V 30 - - I C = 10mA, I B= 1.0mA - - 0.2 V I C = 50mA, I B= 5.0mA - - 0.3 V I C = 10mA, I B= 1.0mA 0.65 - 0.85 I C = 50mA, I B= 5.0mA - - 0.95 300 - - MHz h FE DC Current Gain (Note 2) Collector-Emitter Saturation Voltage (Note 2) VCE(SAT) Base-Emitter Saturation Voltage (Note 2) VBE(SAT) V CE= 20V, I C= 10mA fT Gain-Bandwidth Product f = 100MHz - V Collector-Base Capacitance CCBO VCB= 5.0V, f =1.0MHz - - 4.0 pF Emitter-Base Capacitance CEBO VEB = 0.5V, f =1.0MHz - - 8.0 pF - - 35 ns - - 35 ns - - 200 ns - - 50 ns Delay Time td Rise Time tr Storage Time ts Fall Time tf VCC = 3.0V, I C= 10mA VBE(off) = -0.5V, IB1= -1.0mA V CC= 3.0V, I C= 10mA I B1= I B2= 1.0mA Note 2. Short duration test pulse used to minimize self-heating SWITCHING TIME EQUIVALENT TEST CIRCUITS +3V +3V 275Ω 300ns Duty Cycle ~ 2.0% +10.9V 10 to 500us Duty Cycle ~ 2.0% 275Ω +10.9V 0 0 -0.5V < 1ns 10KΩ CS* < 4pF Delay and Rise Time Equivalent Test Circuit 9/20/2005 CS* < 4pF 10KΩ -9.1V < 1ns 1N916 Storage and Fall Time Equivalent Test Circuit Page 2 www.panjit.com MMDT3904 CHARACTERISTICS CURVES (Each Transistor) TJ = 25°C Unless otherwise noted 300 1.400 VCE = 1V TJ = 150 °C 250 1.000 200 TJ = 100 °C TJ = 100 °C VBE (V) hFE 1.200 150 TJ = 25 °C 100 0.800 TJ = 25 °C 0.600 0.400 50 TJ = 150 0.200 VCE = 1V 0.000 0 0.01 0.1 1 10 100 0.01 1000 0.1 1 10 100 1000 Collector Current, IC (mA) Collector Current, IC (mA) Fig. 1. hFE vs. Ic Fig. 2. VBE vs. Ic 1.0 1.000 TJ = 25 °C IC/IB = 10 TJ = 150 °C VBE(sat) (V) VCE(sat) (V) TJ = 100 °C 0.100 TJ = 25 °C TJ = 150 °C IC/IB = 10 0.1 0.010 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) Fig. 3. VCE(sat) vs. Ic Fig. 4. VBE(sat) vs. Ic 10 TJ = 25 °C Capacitance (pF) CIB (EB) COB (CB) 1 0.1 1 10 100 Reverse Voltage, VR (V) Fig. 5. Capacitances 9/20/2005 Page 3 www.panjit.com MMDT3904 PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS ORDERING INFORMATION MMDT3904 T/R7 - 3,000 units per 7 inch reel MMDT3904 T/R13 -10,000 units per 13 inch reel Copyright PanJit International, Inc 2005 The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or system s. Pan Jit does not convey any license under its patent rights or rights of others. 9/20/2005 Page 4 www.panjit.com