DIODES MMST6427_2

MMST6427
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Features
•
•
•
•
•
•
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
High Current Gain
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3 and 4)
•
•
•
•
•
•
•
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification Rating
94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
Marking Information: K1D - See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.006 grams (approximate)
Maximum Ratings
Dim
Min
Max
A
0.25
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
G
E
0.30
0.40
H
G
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.18
C
B C
B
E
Mechanical Data
•
•
SOT-323
A
K
M
J
D
E
L
C
0°
8°
α
All Dimensions in mm
E
B
@TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
Symbol
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj, TSTG
Value
40
40
12
500
200
625
-55 to +150
@TA = 25°C unless otherwise specified
Symbol
Min
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
40
40
12
⎯
⎯
⎯
⎯
⎯
⎯
50
1.0
50
V
V
V
nA
μA
nA
hFE
10,000
20,000
14,000
100,000
200,000
140,000
⎯
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
VBE(SAT)
VBE(ON)
⎯
⎯
1.2
1.5
2.0
1.75
DC Current Gain
Notes:
1.
2.
3.
4.
5.
Unit
V
V
V
mA
mW
°C/W
°C
Cobo
Cibo
8.0 Typical
15 Typical
Test Condition
IC = 100μA, IE = 0
IC = 100mA, IB = 0
IE = 10μA, IC = 0
VCB = 30V, IE = 0
VCE = 25V, IB = 0
VEB = 10V, IC = 0
V
V
IC = 10mA, VCE = 5.0V
IC = 100mA, VCE = 5.0V
IC = 500mA, VCE = 5.0V
IC = 50mA, IB = 0.5mA
IC = 500mA, IB = 0.5mA
IC = 500mA, IB = 0.5mA
IC = 50mA, VCE =5.0V
pF
pF
VCB = 10V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
V
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Code
0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Short duration pulse test used to minimize self-heating effect.
DS30166 Rev. 10 - 2
1 of 3
www.diodes.com
MMST6427
© Diodes Incorporated
1.10
300
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
PD, POWER DISSIPATION (mW)
1.05
Note 1
250
200
150
100
50
IC
= 1000
IB
1.00
TA = -50°C
0.95
0.90
0.85
0.80
TA = 25°C
0.75
0.70
0.65
0.60
T A = 150°C
0.55
0.50
0.45
0.40
0
1,000
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current
25
75 100 125 150 175 200
50
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs. Ambient Temperature
1
0
1.6
1,000,000
VBE(ON), BASE EMITTER VOLTAGE (V)
hFE, DC CURRENT GAIN
1.5
100,000
10,000
1,000
100
10
1,000
100
IC, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs. Collector Current
TA = -50°C
1.4
1.3
1.2
T A = 25°C
1.1
1.0
0.9
0.8
TA = 150°C
0.7
0.6
0.5
0.4
0.3
0.2
1
VCE = 5V
10
100
1
IC, COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Voltage vs. Collector Current
0.1
fT, GAIN BANDWIDTH PRODUCT (MHz)
1,000
100
10
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs. Collector Current
DS30166 Rev. 10 - 2
2 of 3
www.diodes.com
MMST6427
© Diodes Incorporated
Ordering Information
(Note 4 & 6)
Packaging
SOT-323
Device
MMST6427-7-F
Notes:
Shipping
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
YM
Marking Information
K1D
Date Code Key
Year
K1D= Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
2005
S
2006
T
2007
U
2000
2001
2002
2003
2004
Code
L
M
N
P
R
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Code
1
2
3
4
5
6
7
2008
V
Aug
8
2009
W
Sep
9
2010
X
Oct
O
2011
Y
Nov
N
2012
Z
Dec
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30166 Rev. 10 - 2
3 of 3
www.diodes.com
MMST6427
© Diodes Incorporated