Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MP4T243 Series V3.00 Features •Low Phase Noise Oscillator Transistor •200 mW Driv er Amplifier Transistor •Operation to 8 GHz •Av ailable as Chip •Av ailable in Hermetic Surface Mount Packages Description The MP4T24300 series of high fT NPN medium power bipolar transistors are designed for usage in oscillators to 8 GHz and for moderate power driv er amplifiers through 3 GHz with noise figure below 4 dB. Case Styles Chip This industry standard transistor is av ailable as a chip for hybrid oscillator circuits or in hermetic ceramic packages for military usage. The chip and hermetic packages may be screened to JANTXV equiv alent lev els. The MP4T243 transistors utilize sub-micron photolithography and locos oxidation techniques to minimize parasitic capacitances. It also reduces shot noise enabling improv ed low noise characteristics. These transistors use a high temperature refractory barrier/gold metalization process. The MP4T243 transistor is emitter ballasted using ion implanted polysilicon resistors to prev ent emitter current hot spots at high current operation. Micro-X Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 1 Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MP4T243 Series V3.00 Absolute Maximum Ratings @ 25°C MP4T24300 MP4T24335 Symbol Unit Chip Micro-X VCBO Volts 25 25 VCEO Volts 12 12 VEBO Volts 1.5 1.5 Collector Current IC mA 110 110 Junction Temperature Tj °C 200 200 Storage Temperature T STG °C -65 to +200 -65 to +200 PT mW 1000 400 T CP °C 150 150 Parameter 1 Collector-Base Voltage 1 Collector-Emitter Voltage 1 Emitter-Base Voltage 1 1,3 Power Dissipation 2 Operating Temperature 1. At 25°C case temperature (packaged transistors) or 25°C mounting surface temperature (chip transistors). 2. Case or bonding surface temperature. Derate maximum power dissipation rating to zero watts at maximum operating temperature. 3. The thermal resistance of the MP4T24300 junction/case is 50°C/watt nominal. Electrical Specifications @ 25°C Parameter MP4T24300 MP4T24335 Condition Symbol Units Chip Micro-X Gain Bandwidth Product VCE = 12 volts I C = 40 mA fT GHz 7 typ 7 typ Insertion Power Gain VCE = 12 volts I C = 40 mA f = 1 GHz f = 2 GHz |S21E|2 dB 12 min 8 typ 11 min 8 typ VCE = 12 volts I C = 20 mA f = 1 GHz NF 3 typ 3 typ VCE = 12 volts I C = 40 mA f = 2 GHz GTU (max) 11 typ 10.5 typ VCE = 12 volts I C = 40 mA f = 2 GHz MAG 15 typ 15 typ VCE = 12 volts I C = 40 mA f = 1 GHz f = 2 GHz P1dB 24 typ 22 typ 24 typ 22 typ Noise Figure Unilateral Gain Maximum Available Gain Power Out at 1 dB Compression dB aB dB dBm pecification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 2 Moderate Power High fT NPN Silicon Transistor MP4T243 Series V2.00 Electrical Specifications @ 25°C Symbol Min Typical Max Units Collector Cut-off Current Parameter VCB = 15 volts I E = 0 µA Condition I CBO 10 µA Emitter Cut-off Current VEB = 1 volt I C = 0 µA I EBO 1 µA Forward Current Gain VCE = 8 volts I C = 50 mA hFE 20 90 250 Collector Base Junction Capacitance VCB = 10 volts I E = 0 µA f = 1 MHz CCB 0.60 0.08 pF Typical Scattering Parameters in the MIcro-X Package MP4T24335 VCE = 12 Volts, IC = 10 mA Frequency (MHz) 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 S11E Mag. 0.598 0.612 0.549 0.709 0.794 0.899 1.013 1.108 1.161 1.161 1.161 S21E Angle -157 177 153 133 115 96 75 53 30 13 13 Mag. 3.610 2.373 1.658 1.355 1.182 1.063 0.973 0.878 0.773 0.677 0.677 Angle -153 170 147 128 110 51 72 50 27 6 6 Mag. 4.510 2.433 1.777 1.465 1.298 1.180 1.090 1.000 0.875 0.723 0.723 S12E Angle 84.4 64.6 44.2 26.1 9.1 -7.4 -24.0 -41.0 -58.8 -73.2 -73.2 Mag. 0.114 0.127 0.146 0.173 0.207 0.246 0.296 0.360 0.438 0.500 0.500 Angle 90.3 64.3 45.3 27.5 11.1 -5.3 -23.1 -40.9 -60.0 -79.5 -79.5 Mag. 0.103 0.126 0.150 0.181 0.215 0.246 0.285 0.347 0.399 0.485 0.485 S22E Angle 27.6 27.3 29.4 30.9 30.2 27.1 21.5 13.4 2.5 9.2 9.4 Mag 0.378 0.286 0.253 0.269 0.314 0.367 0.439 0.559 0.757 0.949 0.949 Angle 32.1 30.1 32.9 32.1 29.4 25.8 19.6 12.1 6.3 13.5 13.5 Mag 0.330 0.239 0.205 0.217 0.262 0.301 0.366 0.457 0.625 0.847 0.847 Angle -73.4 -90.7 -113.2 -138.5 -162.2 170.8 157.0 135.6 116.4 103.4 103.6 VCE = 12 Volts, IC = 20 mA Frequency (MHz) 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 S11E Mag. 0.574 0.591 0.635 0.696 0.788 0.890 1.018 1.106 1.165 1.147 1.147 S21E S12E S22E Angle -78.0 -100.4 -126.2 -151.3 -169.0 -167.7 156.2 134.3 115.1 101.7 101.7 Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 3 Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MP4T243 Series V3.00 Typical Scattering Parameters in the MIcro-X Package MP4T24335 ( Continued ) VCE = 12 Volts, IC = 40 mA Frequency (MHz) 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 S11E Mag. 0.571 0.603 0.650 0.701 0.788 0.879 0.982 1.057 1.101 1.097 S21E Angle -164 166 141 123 104 86 66 46 25 5 Mag. 4.410 2.533 1.875 1.485 1.305 1.163 1.065 0.932 0.815 0.675 Angle -168 165 140 123 105 86 67 46 25 7 Mag. 4.055 2.330 1.728 1.382 1.215 1.085 0.990 0.873 0.760 0.638 S12E Angle 88.2 65.6 44.5 27.0 10.2 -6.0 -23.1 -40.8 -57.8 -76.6 Mag. 0.092 0.118 0.146 0.178 0.210 0.247 0.290 0.333 0.389 0.450 Angle 86.4 64.7 44.4 27.1 10.6 -5.6 -22.0 -39.4 -55.6 -73.3 Mag. 0.084 0.111 0.140 0.171 0.204 0.242 0.288 0.334 0.394 0.462 S22E Angle 35.3 35.2 35.2 33.4 31.2 26.3 21.4 14.6 5.8 -8.5 Mag 0.282 0.196 0.176 0.183 0.216 0.255 0.317 0.391 0.502 0.656 Angle 35.1 37.7 38.0 36.5 34.6 29.8 5.0 18.1 9.7 -4.7 Mag 0.268 0.200 0.185 0.192 0.218 0.254 0.320 0.396 0.508 0.668 Angle -83.2 -105.6 -127.1 -147.4 -169.0 171.8 153.6 135.8 116.6 96.7 VCE = 12 Volts, IC = 60 mA Frequency (MHz) 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 S11E Mag. 0.577 0.608 0.652 0.701 0.786 0.874 0.972 1.045 1.086 1.084 S21E S12E S22E Angle -72.9 -88.8 -108.3 -127.9 -147.4 -160.4 -161.7 -145.7 125.8 105.7 pecification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 4 Moderate Power High fT NPN Silicon Transistor MP4T243 Series V2.00 Typical Performance Curves POWER DERATING CURVES DC SAFE OPERATING RANGE AT 25°C 1000 900 MP4T24300 Chip on 25C Heat Sink 180 160 TOTAL POWER DISSIPATION (mW) COLLECTOR CURRENT (mA) 200 140 120 100 80 60 MP4T24335 Micro-X 40 MP4T24300 Chip on 25C Heat Sink 800 700 600 500 400 MP4T24335 Micro-X 300 200 100 20 0 0 2 4 6 8 10 12 14 -25 0 25 COLLECTOR EMITTER VOLTAGE (Volts) 75 100 125 150 175 200 AMBIENT TEMP (C) NOMINAL COLLECTOR-BASE CAPACITANCE vs COLLECTOR-BASE VOLTAGE (MP4T24335) NOMINAL GAIN vs FREQUENCY at VCE = 12 Volts and IC = 20 mA (MA4T24335) 1 16 0.9 14 12 0.8 GTU (MAX) GAIN (dB) COLLECTOR-BASE CAPACITANCE (pF) 50 0.7 0.6 10 8 |S21|2 6 4 0.5 2 0.4 1 10 COLLECTOR-BASE VOLTAGE (Volts) 100 0 1 10 FREQUENCY (GHz) Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 5 Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MP4T243 Series V3.00 Typical Performance Curves (Cont’d) NOMINAL GAIN BANDWIDTH PRODUCT (fT) vs COLLECTOR CURRENT at VCE = 8 and 12 VOLTS (MP4T24335) NOMINAL GAIN vs COLLECTOR CURRENT at F = 2 GHz and VCE = 12 VOLTS (MP4T24335) 16 8 14 7 GAIN (dB) GAIN BANDWIDTH PRODUCT in GHz MAG 12 10 GTU (MAX) 8 6 |S21E |2 4 6 12 VOLTS 5 4 3 8 VOLTS 2 2 1 0 1 10 100 1 10 COLLECTOR CURRENT (mA) NOMINAL NOISE FIGURE and ASSOCIATED GAIN vs COLLECTOR CURRENT at 1 GHz and VCE = 12 VOLTS (MP4T24335) NOMINAL DC CURRENT GAIN (hFE) vs COLLECTOR CURRENT at VCE = 8 VOLTS (MP4T24335) 100 90 80 70 60 ASSOCIATD GAIN (dB) 110 18 16 NOISE FIGURE(dB) 120 DC CURRENT GAIN 100 COLLECTOR CURRENT (mA) 8 14 12 ASSOCIATED GAIN 10 6 NOISE FIGURE 4 2 0 50 0 20 40 60 80 100 1 10 100 COLLECTOR CURRENT (mA) COLLECTOR CURRENT (mA) NOMINAL OUTPUT POWER at the 1dB COMPRESSION POINT vs COLLECTOR CURRENT at F = 1 and 2 GHz, VCE = 8 VOLTS (MP4T24335) 40 35 P1dB (dBm) 30 25 1 GHz 20 15 10 2 GHz 5 0 0 5 10 15 20 25 30 35 40 45 50 55 COLLECTOR CURRENT (mA) pecification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 6 Moderate Power High fT NPN Silicon Transistor MP4T243 Series V2.00 Case Styles Chip MP4T24300 A MP4T24300 DIM. A B C D (Dia.) E (Chip Thickness) Base B C D Micro-X INCHES 0.013 0.013 0.007 0.002 0.0045 MILLIMETERS 0.325 0.325 0.18 0.030 0.114 Emitter MP4T24335 Emitter MP4T24335 F 4 PLCS. E DIM. A B C D E F G H H Collector Base B Emitter INCHES MIN. MAX. 0.092 0.108 0.079 0.087 0.070 0.019 0.025 0.018 0.022 0.150 0.003 0.006 45° MILLIMETERS MIN. MAX. 2.34 2.74 2.01 2.21 1.78 0.48 0.64 0.46 0.56 3.81 0.08 0.15 45° A C D G Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 7