ONSEMI MPS6725G

MPS6724, MPS6725
One Watt Darlington
Transistors
NPN Silicon
http://onsemi.com
Features
• Pb−Free Packages are Available*
COLLECTOR 3
BASE
2
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
Value
Unit
VCEO
MPS6724
MPS6725
Collector −Base Voltage
Vdc
40
50
EMITTER 1
VCBO
MPS6724
MPS6725
Emitter −Base Voltage
Vdc
50
60
VEBO
12
Vdc
Collector Current − Continuous
IC
1000
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.0
8.0
W
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5
20
W
mW/°C
TJ, Tstg
−55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
125
°C/W
Thermal Resistance, Junction−to−Case
RqJC
50
°C/W
Operating and Storage Junction
Temperature Range
1
2
TO−92 (TO−226)
CASE 29−10
STYLE 1
3
MARKING DIAGRAM
THERMAL CHARACTERISTICS
MPS
672x
AYWW G
G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MPS672x = Device Code
x = 4 or 5
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 3
1
Publication Order Number:
MPS6724/D
MPS6724, MPS6725
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
40
50
−
−
50
60
−
−
12
−
−
−
100
100
−
100
25,000
4,000
−
40,000
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CES
Vdc
MPS6724
MPS6725
Collector −Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
V(BR)CBO
Vdc
MPS6724
MPS6725
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0)
ICBO
nAdc
MPS6724
MPS6725
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
Vdc
IEBO
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc)
(IC = 1000 mAdc, VCE = 5.0 Vdc)
hFE
−
Collector −Emitter Saturation Voltage
(IC = 1000 mAdc, IB = 2.0 mAdc)
VCE(sat)
−
1.5
Vdc
Base −Emitter On Voltage
(IC = 1000 mAdc, VCE = 5.0 Vdc)
VBE(on)
−
2.0
Vdc
fT
100
1000
MHz
Ccb
−
10
pF
SMALL− SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 200 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Collector−Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
I C , COLLECTOR CURRENT (mA)
TYPICAL CHARACTERISTICS
CURRENT LIMIT
DUTY CYCLE ≤ 10%
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3.0 k
2.0 k
100 ms
1.0 ms
1.0 k
1.0 s
500
200
1.5
TA = 25°C
TC = 25°C
2.0
5.0
10
20
30
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region — Safe Operating Area
http://onsemi.com
2
200 k
TJ = 125°C
h FE , DC CURRENT GAIN
100 k
70 k
50 k
25°C
30 k
20 k
10 k
7.0 k
5.0 k
−55°C
VCE = 5.0 V
3.0 k
2.0 k
5.0 7.0 10
20
50 70 100
30
200 300
500
VCE , COLLECTOR EMITTER VOLTAGE (VOLTS)
MPS6724, MPS6725
3.0
IC =
50 mA
IC =
10 mA
2.5
1.5
1.0
0.5
0.1
0.2
0.5 1.0 2.0
q V , TEMPERATURE COEFFICIENTS (mV/° C)
TJ = 25°C
V, VOLTAGE (VOLTS)
1.4
VBE(sat) @ IC/IB = 1000
1.2
VBE(on) @ VCE = 5.0 V
VCE(sat) @ IC/IB = 1000
5.0 7.0 10
20
30
50
70 100
200 300
500
−1.0
−2.0
*APPLIES FOR IC/IB ≤ hFE/3.0
100 200
500 1000
25°C TO 125°C
−55°C TO 25°C
−3.0
−4.0
25°C TO 125°C
qVB FOR VBE
−5.0
−6.0
−55°C TO 25°C
5.0 7.0 10
20
30
50
70 100
200 300
500
IC, COLLECTOR CURRENT (mA)
Figure 4. “ON” Voltages
Figure 5. Temperature Coefficients
4.0
20
VCE = 5.0 V
TJ = 25°C
f = 100 MHz
2.0
TJ = 25°C
C, CAPACITANCE (pF)
h FE , SMALL−SIGNAL CURRENT GAIN
50
*qVC FOR VCE(sat)
IC, COLLECTOR CURRENT (mA)
1.0
0.8
0.6
0.4
0.2
20
Figure 3. Collector Saturation Region
1.6
0.6
5.0 10
IB, BASE CURRENT (mA)
Figure 2. DC Current Gain
0.8
TJ = 25°C
2.0
IC, COLLECTOR CURRENT (mA)
1.0
IC =
500 mA
IC =
250 mA
10
7.0
Cibo
5.0
Cobo
3.0
0.5
1.0
2.0
5.0
10
20
50
100
200
500
2.0
0.04
0.1
0.2
0.4
1.0
2.0
4.0
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. High Frequency Current Gain
Figure 7. Capacitance
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3
10
20
40
MPS6724, MPS6725
ORDERING INFORMATION
Device
MPS6724
MPS6724G
MPS6725
MPS6725G
MPS6724RLRA
MPS6724RLRAG
MPS6725RLRP
MPS6725RLRPG
Package
Shipping †
TO−92
TO−92
(Pb−Free)
5000 Units / Bulk
TO−92
TO−92
(Pb−Free)
5000 Units / Bulk
TO−92
TO−92
(Pb−Free)
2000 Units / Tape & Reel
TO−92
TO−92
(Pb−Free)
2000 Units / Tape & Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
4
MPS6724, MPS6725
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−10
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
A
B
R
SEATING
PLANE
P
L
F
K
X X
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
D
G
H
J
R
1 2 3
N C
SECTION X−X
N
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.021
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
−−−
0.250
−−−
0.080
0.105
−−− 0.100
0.135
−−−
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.457
0.533
0.407
0.482
1.15
1.39
2.42
2.66
0.46
0.61
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
3.43
−−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Phone: 81−3−5773−3850
Email: [email protected]
http://onsemi.com
5
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
MPS6724/D