MPSA70 Amplifier Transistor PNP Silicon Features • Pb−Free Package is Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Emitter −Base Voltage VEBO −4.0 Vdc Collector Current − Continuous IC −100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range 2 BASE 1 EMITTER THERMAL CHARACTERISTICS TO−92 CASE 29−11 STYLE 1 1 2 Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W 3 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MPS A70 AYWW G G MPSA70 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping MPSA70RLRM TO−92 2,000/Ammo Pack TO−92 (Pb−Free) 2,000/Ammo Pack MPSA70RLRMG *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 2 1 Publication Order Number: MPSA70/D MPSA70 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector −Emitter Breakdown Voltage (Note 1) (IC = −1.0 mAdc, IB = 0) V(BR)CEO −40 − Vdc Emitter −Base Breakdown Voltage (IE = −100 mAdc, IC = 0) V(BR)EBO −4.0 − Vdc Collector Cutoff Current (VCB = −30 Vdc, IE = 0) ICBO − −100 nAdc DC Current Gain (IC = −5.0 mAdc, VCE = −10 Vdc) hFE 40 400 − Collector −Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) VCE(sat) − −0.25 Vdc fT 125 − MHz Cobo − 4.0 pF OFF CHARACTERISTICS ON CHARACTERISTICS SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −5.0 mAdc, VCE = −10 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. http://onsemi.com 2 MPSA70 TYPICAL NOISE CHARACTERISTICS (VCE = − 5.0 Vdc, TA = 25°C) 10 7.0 IC = 10 mA 5.0 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 1.0 7.0 5.0 BANDWIDTH = 1.0 Hz RS ≈ 0 30 mA 3.0 100 mA 300 mA 1.0 mA 2.0 BANDWIDTH = 1.0 Hz RS ≈ ∞ IC = 1.0 mA 3.0 2.0 300 mA 1.0 0.7 0.5 100 mA 30 mA 0.3 0.2 1.0 10 mA 0.1 10 20 50 100 200 500 1.0k f, FREQUENCY (Hz) 2.0k 5.0k 10k 10 20 50 1.0M 500k BANDWIDTH = 1.0 Hz 200k 100k 50k 0.5 dB 5.0k 1.0 dB 2.0k 1.0k 500 1.0M 500k BANDWIDTH = 1.0 Hz 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1.0k 20k 10k 0.5 dB 5.0k 1.0 dB 2.0k 1.0k 500 200 100 2.0 dB 3.0 dB 5.0 dB 10 20 RS , SOURCE RESISTANCE (OHMS) Figure 3. Narrow Band, 100 Hz 1.0M 500k 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1.0k Figure 4. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200k 100k 50k Noise Figure is Defined as: NF + 20 log10 20k 10k 0.5 dB 2.0k 1.0k 500 1.0 dB 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 2 2 1ń2 S ) In RS ƫ ƪen2 ) 4KTR 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10−23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms) 5.0k 200 100 10k 200k 100k 50k 20k 10k 200 100 5.0k Figure 2. Noise Current RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) Figure 1. Noise Voltage 100 200 500 1.0k 2.0k f, FREQUENCY (Hz) 500 700 1.0k IC, COLLECTOR CURRENT (mA) Figure 5. Wideband http://onsemi.com 3 MPSA70 TYPICAL STATIC CHARACTERISTICS h FE , DC CURRENT GAIN 400 TJ = 125°C 25°C 200 −55 °C 100 80 MPSA70 VCE = 1.0 V VCE = 10 V 60 40 0.003 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 100 1.0 TA = 25°C MPSA70 IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 6. DC Current Gain 0.8 IC = 1.0 mA 0.6 10 mA 50 mA 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 TA = 25°C PULSE WIDTH = 300 ms 80 DUTY CYCLE ≤ 2.0% 300 mA 200 mA 150 mA 40 100 mA 20 50 mA 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. Collector Saturation Region V, VOLTAGE (VOLTS) θV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 0 VCE(sat) @ IC/IB = 10 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 40 Figure 8. Collector Characteristics 1.4 1.2 250 mA 60 0 20 IB = 400 mA 350 mA 50 1.6 *APPLIES for IC/IB ≤ hFE/2 0.8 *qVC for VCE(sat) − 55°C to 25°C 0.8 25°C to 125°C 1.6 2.4 0.1 100 25°C to 125°C 0 Figure 9. “On” Voltages qVB for VBE 0.2 − 55°C to 25°C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 10. Temperature Coefficients http://onsemi.com 4 50 100 MPSA70 TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 200 100 70 50 30 tr 20 10 7.0 5.0 1.0 tf 30 td @ VBE(off) = 0.5 V 2.0 100 70 50 20 20 30 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 10 −1.0 100 − 2.0 − 3.0 − 5.0 − 7.0 −10 − 20 − 30 IC, COLLECTOR CURRENT (mA) − 50 − 70 −100 Figure 12. Turn−Off Time 500 10 TJ = 25°C TJ = 25°C 7.0 VCE = 20 V Cib C, CAPACITANCE (pF) 300 5.0 V 200 100 5.0 3.0 2.0 Cob 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.2 0.5 1.0 2.0 5.0 VR, REVERSE VOLTAGE (VOLTS) Figure 13. Current−Gain − Bandwidth Product Figure 14. Capacitance 20 10 MPSA70 hfe ≈ 200 @ IC = −1.0 mA 7.0 5.0 3.0 200 VCE = −10 Vdc f = 1.0 kHz TA = 25°C 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.1 IC, COLLECTOR CURRENT (mA) hoe , OUTPUT ADMITTANCE (m mhos) f, T CURRENT−GAIN BANDWIDTH PRODUCT (MHz) Figure 11. Turn−On Time hie , INPUT IMPEDANCE (k Ω ) VCC = − 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C ts 300 t, TIME (ns) t, TIME (ns) 1000 700 500 VCC = 3.0 V IC/IB = 10 TJ = 25°C 100 70 50 30 20 10 20 50 VCE = 10 Vdc f = 1.0 kHz TA = 25°C MPSA70 hfe ≈ 200 @ IC = 1.0 mA 10 7.0 5.0 3.0 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 2.0 0.1 100 Figure 15. Input Impedance 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 16. Output Admittance http://onsemi.com 5 50 100 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) MPSA70 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 FIGURE 18 0.05 P(pk) 0.02 0.03 0.02 t1 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN−569) ZqJA(t) = r(t) • RqJA TJ(pk) − TA = P(pk) ZqJA(t) 500 1.0k 2.0k 5.0k 10k 20k 50k 100k Figure 17. Thermal Response IC, COLLECTOR CURRENT (mA) 400 200 The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 18 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 17. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 100 ms 100 TC = 25°C dc 60 TA = 25°C 40 TJ = 150°C 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 6.0 2.0 1.0 s dc 20 4.0 10 ms 1.0 ms 40 4.0 6.0 8.0 10 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 19. Active−Region Safe Operating Area 104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA IC, COLLECTOR CURRENT (nA) VCC = 30 V A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. To find ZqJA(t), multiply the value obtained from Figure 17 by the steady state value RqJA. 103 ICEO 102 101 ICBO AND ICEX @ VBE(off) = 3.0 V 100 Example: Dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. 10−1 10−2 −4 0 −2 0 0 The peak rise in junction temperature is therefore DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C. + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C) For more information, see AN569/D. Figure 20. Typical Collector Leakage Current http://onsemi.com 6 MPSA70 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE DIM A B C D G H J K L N P R V K D X X G J H V C SECTION X−X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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