MPS5172 General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 25 Vdc Collector−Base Voltage VCBO 25 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Power Dissipation @ TA = 60°C PD 450 mW Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Operating and Storage Junction Temperature Range 2 BASE 1 EMITTER 1 2 3 TO−92 (TO−226) CASE 29 STYLE 1 THERMAL CHARACTERISTICS MARKING DIAGRAM MPS 5172 AYWWG G Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MPS5172 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MPS5172 MPS5172G MPS5172RLRM *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 December, 2005 − Rev. 2 1 MPS5172RLRMG Package Shipping TO−92 5000 / Bulk TO−92 (Pb−Free) 5000 / Bulk TO−92 2000/Ammo Pack TO−92 (Pb−Free) 2000/Ammo Pack Publication Order Number: MPS5172/D MPS5172 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CEO 25 − Vdc Collector Cutoff Current (VCE = 25 V, IB = 0) ICES − 100 nAdc Collector Cutoff Current (VCB = 25 V, IE = 0) (VCB = 25 V, IE = 0, TA = 100°C) ICBO − − 100 10 nAdc mAdc Emitter Cutoff Current (VEB = 5.0 V, IC = 0) IEBO − 100 nAdc hFE 100 500 − Collector−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) − 0.25 Vdc Base−Emitter On Voltage (IC = 10 mAdc, VCE = 10 V) VBE(on) 0.5 1.25 Vdc Collector−Base Capacitance (VCB = 10 V, f = 1.0 MHz) Ccb 1.6 10 pF Small−Signal Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 100 750 − OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) (IC = 10 mA, IB = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (VCE = 10 V, IC = 10 mA) SMALL−SIGNAL CHARACTERISTICS 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 MPS5172 TYPICAL STATIC CHARACTERISTICS h FE , DC CURRENT GAIN 400 TJ = 125°C 25°C 200 −55°C 100 80 60 VCE = 1.0 V VCE = 10 V 40 0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 1.0 100 TJ = 25°C IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 0.8 IC = 1.0 mA 0.6 10 mA 50 mA 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 TA = 25°C PULSE WIDTH = 300 ms 80 DUTY CYCLE ≤ 2.0% 300 mA 200 mA 40 100 mA 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 2. Collector Saturation Region V, VOLTAGE (VOLTS) θV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 0 VCE(sat) @ IC/IB = 10 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 40 Figure 3. Collector Characteristics 1.4 1.2 400 mA 60 0 20 IB = 500 mA 50 1.6 0.8 25°C to 125°C 0 *qVC for VCE(sat) − 55°C to 25°C −0.8 25°C to 125°C −1.6 −2.4 0.1 100 *APPLIES for IC/IB ≤ hFE/2 Figure 4. “On” Voltages qVB for VBE 0.2 − 55°C to 25°C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 5. Temperature Coefficients http://onsemi.com 3 50 100 MPS5172 500 10 TJ = 25°C f = 100 MHz 300 TJ = 25°C f = 1.0 MHz 7.0 VCE = 20 V 200 C, CAPACITANCE (pF) f, T CURRENT−GAIN BANDWIDTH PRODUCT (MHz) TYPICAL DYNAMIC CHARACTERISTICS 5.0 V 100 Cib 5.0 Cob 3.0 2.0 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 6. Current−Gain − Bandwidth Product Figure 7. Capacitance http://onsemi.com 4 10 20 50 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) MPS5172 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 FIGURE 9 0.05 P(pk) 0.02 0.03 0.02 t1 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 t2 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN−569) ZqJA(t) = r(t) • RqJA TJ(pk) − TA = P(pk) ZqJA(t) 500 1.0k 2.0k 5.0k 10k 20k 50k 100k Figure 8. Thermal Response 104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA IC, COLLECTOR CURRENT (nA) VCC = 30 Vdc 103 102 ICEO 101 ICBO AND 100 ICEX @ VBE(off) = 3.0 Vdc 10−1 10−2 − 40 − 20 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C) Figure 10. IC, COLLECTOR CURRENT (mA) 400 1.0 ms 200 100 60 40 TC = 25°C TA = 25°C dc TJ = 150°C 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 6.0 2.0 10 ms 1.0 s dc 20 4.0 100 ms 4.0 6.0 8.0 10 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 40 A train of periodical power pulses can be represented by the model as shown in Figure 9. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 8 was calculated for various duty cycles. To find ZqJA(t), multiply the value obtained from Figure 8 by the steady state value RqJA. Example: The MPS3904 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 8 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C. For more information, see ON Semiconductor Application Note AN569/D, available from the Literature Distribution Center or on our website at www.onsemi.com. The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 11 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 8. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 11. http://onsemi.com 5 MPS5172 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K D X X G J H V C SECTION X−X 1 N N DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− STYLE 1: PIN 1. 2. 3. 3. MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− EMITTER BASE COLLECTOR SOURCE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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