SEMICONDUCTOR MPSA94A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES B C A High Breakdown Voltage. N K ) CHARACTERISTIC G D SYMBOL RATING UNIT Collector-Base Voltage VCBO -480 V Collector-Emitter Voltage VCEO -480 V Emitter-Base Voltage VEBO -6 V Collector Current IC -300 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Tstg -55 150 J MAXIMUM RATING (Ta=25 E H Storage Temperature Range F 2 3 C 1 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M L F DIM A B C D E F G H J K L M N 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC=-100 A, IE=0 -480 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -480 - - V Collector-Emitter Breakdown Voltage V(BR)CES IC=-100 A, IB=0 -480 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A, IC=0 -6.0 - - V Collector Cut off Current ICBO VCB=-400V, IE=0 - - -100 nA Collector Cut off Current ICES VCE=-480V, IB=0 - - -1 A Emitter Cutoff Current IEBO VEB=-4V, IC=0 - - -100 nA VCE=-10V, IC=-1mA 40 - - VCE=-10V, IC=-10mA 50 - 300 VCE=-10V, IC=-50mA 45 - - VCE=-10V, IC=-100mA 40 - - DC Current Gain hFE * Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage * * VCE(sat)1 IC=-1mA, IB=-0.1mA - - -0.35 VCE(sat)2 IC=-20mA, IB=-2mA - - -0.5 VCE(sat)3 IC=-50mA, IB=-5mA - - -0.75 VBE(sat) IC=-10mA, IB=-1mA - - -0.75 V V *Pulse Test : Pulse Width 300 S, Duty Cycle 2% 2003. 12. 9 Revision No : 0 1/2 MPSA94A IC VBE(sat) - I C 1K V CE =-10V 100 30 10 3 1 SATURATION VOLTAGE VCE(sat) (mV) -1 -3 -10 -30 -100 -300 IC =10I B 3K 1K 300 100 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) VCE(sat) - I C C ob - V CB I C =10I B 30K 10K 3K 1K 300 100 30 10 1 10K COLLECTOR CURRENT I C (mA) 100K 3 10 30 100 300 COLLECTOR CURRENT I C (mA) 2003. 12. 9 -1k Revision No : 0 1K COLLECTOR OUTPUT CAPACITANCE Cob(pF) DC CURRENT GAIN h FE 300 SATURATION VOLTAGE VBE(sat) (mV) h FE - 100 1K f=1MHz IE =0 30 10 3 1 0.1 0.3 1 3 10 30 100 COLLECTOR BASE VOLTAGE V CB (V) 2/2