Freescale Semiconductor Technical Data Document Number: MRF18090B Rev. 7, 5/2006 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications. • GSM and EDGE Performances, Full Frequency Band Power Gain — 13.5 dB (Typ) @ 90 Watts (CW) Efficiency — 45% (Typ) @ 90 Watts (CW) • Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 1.90 - 1.99 GHz, 90 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETS CASE 465B - 03, STYLE 1 NI - 880 MRF18090BR3 CASE 465C - 02, STYLE 1 NI - 880S MRF18090BSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 250 1.43 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 0.7 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor Class 2 (Minimum) M3 (Minimum) MRF18090BR3 MRF18090BSR3 1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 750 mAdc) VGS(Q) 2.5 3.7 4.5 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.1 — Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs — 7.2 — S Crss — 4.2 — pF 12 13.5 — 40 45 — — — - 10 Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 μAdc) On Characteristics Dynamic Characteristics Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture) Common- Source Amplifier Power Gain @ 90 W (1) (VDD = 26 Vdc, IDQ = 750 mA, f = 1930 - 1990 MHz) Gps Drain Efficiency @ 90 W (1) (VDD = 26 Vdc, IDQ = 750 mA, f = 1930 - 1990 MHz) η Input Return Loss (1) (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA, f = 1930 - 1990 MHz) dB % IRL dB 1. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1900 band, ensuring batch - to - batch consistency. MRF18090BR3 MRF18090BSR3 2 RF Device Data Freescale Semiconductor R1 T1 R2 Z8 VDD R3 VGG C3 R4 R5 C1 Z7 Z9 Z4 Z5 C1 C2 C3, C4 C5 C6, C7 R1 R2, R3, R6 R4 R5 T1 Z1 RF OUTPUT C7 Z6 C6 Z2 C5 Z10 Z3 Z1 C4 C2 R6 RF INPUT + DUT 1.0 mF Chip Capacitor (0805) 1.0 nF Chip Capacitor (0805) 6.8 pF, 100B Chip Capacitors 220 mF, 50 V Electrolytic Capacitor 12 pF, 100B Chip Capacitors 2.2 kW Chip Resistor (0805) 1.0 kW Chip Resistors (0805) 10 kΩ Chip Resistor (0805) 6.8 kΩ Chip Resistor (0805) BC847 SOT - 23 0.85″ x 0.09″ Microstrip Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 PCB Printed Inductance Printed Inductance (Butterfly) 0.70″ x 0.09″ Microstrip 0.36″ x 0.09″ Microstrip 0.21″ x 1.25″ Microstrip 0.45″ x 1.18″ Microstrip 1.37″ x 0.05″ Microstrip 0.39″ x 0.09″ Microstrip 1.25″ x 0.09″ Microstrip Teflon® Glass Figure 1. 1.93 - 1.99 MHz Test Fixture Schematic C5 R3 R5 VBIAS VSUPPLY R2 R1 T1 R4 R6 C3 C4 C1 C2 C6 C7 MRF18090B Ground Ground Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 1.93 - 1.99 GHz Test Fixture Component Layout MRF18090BR3 MRF18090BSR3 RF Device Data Freescale Semiconductor 3 ÏÏÏ ÏÏÏ ÏÏÏ C2 C1 T1 T1 R1 VSUPPLY R6 R2 + C5 R5 R3 C3 C6 T2 R4 C4 C7 RF INPUT C9 Z4 Z1 RF OUTPUT Z3 Z2 C8 C10 C1, C3 C2 C4 C5 C6, C7 C8, C9, C10 R1 R2, R3 R4 R5 10 kΩ Chip Resistor (0603) R6 5 kΩ, SMD Potentiometer T1 LP2951 Micro - 8 Voltage Regulator T2 BC847 SOT - 23 NPN Transistor Z1 0.491″ x 0.110″ Microstrip Z2 0.756″ x 1.260″ Microstrip Z3 1.433″ x 1.260″ Microstrip Z4 0.567″ x 0.110″ Microstrip Substrate = 0.5 mm Teflon® Glass 1 mF Chip Capacitors (0805) 0.1 mF Chip Capacitor (0805) 1 nF Chip Capacitor (0805) 220 mF, 50 V Electrolytic Capacitor 8.2 pF, 100A Chip Capacitors 22 pF, 100A Chip Capacitors 10 Ω Chip Resistor (0805) 1 kΩ Chip Resistors (0805) 2.2 kΩ Chip Resistor (0805) Figure 3. 1.93 - 1.99 GHz Demo Board Schematic VSUPPLY C1 R1 T 1 R2 R3 Ground C2 C5 R5 C3 R4 T2 C8 C7 C4 MRF18090B ÏÏ ÏÏ ÏÏ ÏÏ Ï Ï ÏÏÏÏÏÏ ÏÏÏÏ R6 C6 C9 C10 Ï ÏÏ Ï ÏÏ Ï ÏÏ Ï ÏÏ Ï Ï MRF18090B Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. 1.93 - 1.99 GHz Demo Board Component Layout MRF18090BR3 MRF18090BSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 16 140 750 mA 14 13 500 mA 12 300 mA 11 VDD = 26 Vdc f = 1990 MHz IDQ = 750 mA f = 1990 MHz 120 Pin = 5 W 100 80 2W 60 40 1W 20 10 0 0.1 1000 1 100 10 Pout, OUTPUT POWER (WATTS) 12 Figure 5. Power Gain versus Output Power 14 16 22 26 18 20 24 VDD, SUPPLY VOLTAGE (VOLTS) 120 60 Pin = 5 W h Pout , OUTPUT POWER (WATTS) 100 80 2W 60 VDD = 26 Vdc IDQ = 750 mA 40 1W 20 100 50 Pout 80 40 60 30 40 20 VDD = 26 Vdc IDQ = 750 mA f = 1990 MHz 20 10 0 0 0 1.91 1.93 32 30 Figure 6. Output Power versus Supply Voltage 120 Pout , OUTPUT POWER (WATTS) 28 1.95 1.97 f, FREQUENCY (GHz) 2.01 1.99 η, DRAIN EFFICIENCY (%) G ps, POWER GAIN (dB) 15 Pout , OUTPUT POWER (WATTS) IDQ = 1000 mA 0 Figure 7. Output Power versus Frequency 1 2 3 4 Pin, INPUT POWER (WATTS) 5 6 Figure 8. Output Power and Efficiency versus Input Power 16 0 −5 12 −10 IRL −15 10 −20 8 VDD = 26 Vdc IDQ = 750 mA 6 1.88 1.90 1.92 1.96 1.98 1.94 f, FREQUENCY (GHz) 2.00 IRL, INPUT RETURN LOSS (dB) G ps, POWER GAIN (dB) Gps 14 −25 2.02 2.04 Figure 9. Wideband Gain and IRL (at Small Signal) MRF18090BR3 MRF18090BSR3 RF Device Data Freescale Semiconductor 5 f = 1805 MHz Zload Zo = 10 Ω f = 1990 MHz f = 1990 MHz f = 1805 MHz Zsource VDD = 26 V, IDQ = 750 mA, Pout = 90 Watts (CW) f MHz Zsource Ω Zload Ω 1805 1.10 - j5.85 1.15 - j2.16 1880 1.56 - j6.75 1.13 - j2.60 1930 2.05 - j8.00 1.30 - j2.23 1990 2.30 - j7.30 0.82 - j2.90 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 10. Large Signal Source and Load Impedance MRF18090BR3 MRF18090BSR3 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 4 2X 1 Q bbb M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. M B (FLANGE) 3 K 2 bbb M D T A M B M R M bbb M T A M B ccc M T A M B M T A M aaa M T A M (INSULATOR) M N ccc (LID) B S M (INSULATOR) B M (LID) M H F C E T A A (FLANGE) SEATING PLANE DIM A B C D E F G H K M N Q R S aaa bbb ccc CASE 465B - 03 ISSUE D NI - 880 MRF18090BR3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 1 B (FLANGE) 2 bbb M D T A M B M T A M B M T A M B (INSULATOR) M N ccc R M M bbb (LID) ccc M T A M aaa M T A M B S B (LID) M (INSULATOR) M M H F C E T A A (FLANGE) MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.44 5.21 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE B K INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.175 0.205 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF SEATING PLANE DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465C - 02 ISSUE D NI - 880S MRF18090BSR3 MRF18090BR3 MRF18090BSR3 RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF18090BR3 MRF18090BSR3 Document Number: MRF18090B 8Rev. 7, 5/2006 RF Device Data Freescale Semiconductor