MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19150/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line Freescale Semiconductor, Inc... RF Power Field Effect Transistors MRF5S19150R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19150SR3 Designed for PCN and PCS base station applications at frequencies from 1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, Pout = 32 Watts, IDQ = 1400 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power — 32 Watts Avg. Power Gain — 14 dB Efficiency — 26% ACPR — - 50 dB IM3 — - 36.5 dBc • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 28 Vdc, f1 = 1960 MHz, 100 Watts CW Output Power • Excellent Thermal Stability • Qualified Up to a Maximum of 32 V Operation • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 1990 MHz, 32 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF5S19150R3 CASE 465C - 02, STYLE 1 NI - 880S MRF5S19150SR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain- Source Voltage VDSS 65 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 357 2 Watts W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C CW 100 Watts Symbol Value (1,2) Unit CW Operation THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW Case Temperature 80°C, 32 W CW RθJC 0.49 0.53 °C/W (1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. (2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA RF DEVICE DATA Motorola, Inc. 2004 For More Information On This Product, Go to: www.freescale.com MRF5S19150R3 MRF5S19150SR3 1 Freescale Semiconductor, Inc. ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) Charge Device Model C7 (Minimum) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 360 µAdc) VGS(th) 2.5 2.8 3.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1400 mAdc) VGS(Q) — 3.8 — Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.6 Adc) VDS(on) — 0.24 — Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3.6 Adc) gfs — 9 — S Crss — 3.1 — pF Characteristic Freescale Semiconductor, Inc... OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg = 9.8 dB @ 0.01% Probability on CCDF. Common- Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Gps 13 14 — dB Drain Efficiency (VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) η 24 26 — % IM3 — - 36.5 - 35 dBc ACPR — - 50 - 48 dBc IRL — - 17 -9 dB Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz referenced to carrier channel power.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR measured over 30 kHz Bandwidth at f1 - 885 MHz and f2 +885 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) (1) Part is internally matched both on input and output. MRF5S19150R3 MRF5S19150SR3 2 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. + C9 B1 C17 + C18 C19 + C20 R1 VGG R3 + R2 C8 C7 C15 C6 + C21 C16 RF OUTPUT Z11 Z8 Z1 Z2 Z3 Z4 C4 Z5 Z6 VDD + C23 C14 C5 RF INPUT + C22 DUT Z10 Z13 C24 Z14 Z15 Z7 Z12 C1 C2 C3 Z9 C26 Freescale Semiconductor, Inc... B2 R4 + C10 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 C27 C13 C11 C25 C28 C29 + C32 + C30 + C33 + C31 C12 1.023″ x 0.082″ Microstrip 0.398″ x 0.082″ Microstrip 0.203″ x 0.082″ Microstrip 0.074″ x 0.082″ Microstrip 0.630″ x 0.084″ Microstrip 0.557″ x 1.030″ x 0.237″ Microstrip Taper 0.103″ x 1.030″ Microstrip 1.280″ x 0.046″ Microstrip Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB 1.280″ x 0.046″ Microstrip 0.090″ x 1.055″ Microstrip 1.125″ x 0.068″ Microstrip 1.125″ x 0.068″ Microstrip 0.505″ x 1.055″ Microstrip 0.898″ x 0.105″ Microstrip 1.133″ x 0.082″ Microstrip Arlon GX0300 - 55- 22, 0.03″, εr = 2.55 Figure 1. MRF5S19150 Test Circuit Schematic Table 1. MRF5S19150 Test Circuit Component Designations and Values Part Description B1, B2 Short RF Beads C1, C2 0.6 – 4.5 Variable Capacitors, Gigatrim C3 0.8 pF Chip Capacitor, B Case C4, C5, C13, C14, C24, C25 9.1 pF Chip Capacitors, B Case C8, C10 1.0 µF, 50 V SMT Tantalum Capacitors C6, C12, C16, C17, C18, C27, C28, C29 0.1 µF Chip Capacitors, B Case C7, C11, C15, C26 1000 pF Chip Capacitors, B Case C9 100 µF, 50 V Electrolytic Capacitor C23 470 µF, 63 V Electrolytic Capacitor C19, C20, C21, C22, C30, C31, C32, C33 22 µF, 35 V Tantalum Capacitors R1 1 kW Chip Resistor R2 560 kW Chip Resistor R3, R4 12 W Chip Resistors MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF5S19150R3 MRF5S19150SR3 3 Freescale Semiconductor, Inc. C17 C18 C9 C19 C20 C23 C14 B1 R3 C5 R1 VGG VDD C15 R2 C7 C8 C16 C6 C21 C22 C24 C1 C3 C2 Freescale Semiconductor, Inc... C10 B2 MRF5S19150 Rev 4 C11 R4 C12 CUT OUT AREA C4 C32 C33 C26 C27 C13 C25 C30 C31 C28 C29 Figure 2. MRF5S19150 Test Circuit Component Layout MRF5S19150R3 MRF5S19150SR3 4 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS Gps 35 13 η 30 12 25 VDD = 28 Vdc, Pout = 32 W (Avg.), IDQ = 1400 mA 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing 11 10 20 −30 IRL 9 8 −35 IM3 7 6 ACPR 5 1900 −40 1.228 MHz Channel Bandwidth Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF) −45 −50 1920 1940 1960 1980 −55 2020 2000 −10 −20 −30 −40 −50 −60 IRL, INPUT RETURN LOSS (dB) 14 η, DRAIN EFFICIENCY (%) 40 IM3 (dBc), ACPR (dBc) G ps , POWER GAIN (dB) 15 Figure 3. 2 - Carrier N - CDMA Broadband Performance −15 IDQ = 2100 mA G ps , POWER GAIN (dB) 15 1700 mA 1400 mA 14 1050 mA 13 700 mA 12 VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurement, 2.5 MHz Tone Spacing 11 1 10 IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) 16 −20 −25 −40 700 mA −45 1050 mA 1 100 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 4. Two - Tone Power Gain versus Output Power Figure 5. Third Order Intermodulation versus Output Power 58 3rd Order −35 5th Order −45 7th Order −50 VDD = 28 Vdc, Pout = 150 W (PEP), IDQ = 1400 mA Two−Tone Measurements, Center Frequency = 1960 MHz −60 0.1 1400 mA −50 −25 −55 1700 mA −35 59 −40 IDQ = 2100 mA −30 −20 −30 VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurement, 2.5 MHz Tone Spacing −55 Pout , OUTPUT POWER (dBm) IMD, INTERMODULATION DISTORTION (dBc) Freescale Semiconductor, Inc... f, FREQUENCY (MHz) 10 1 P3dB = 53.71 dBm (234.96 W) 57 56 55 P1dB = 53.01 dBm (199.99 W) 54 53 52 51 VDD = 28 Vdc, IDQ = 1400 mA Pulsed CW, 8 µsec (on), 1 msec (off) Center Frequency = 1960 MHz 50 49 35 36 37 38 39 40 41 42 43 44 TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com 45 MRF5S19150R3 MRF5S19150SR3 5 Freescale Semiconductor, Inc. 45 −25 IM3 VDD = 28 Vdc, IDQ = 1400 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2 x N−CDMA, 2.5 MHz @ 1.2288 MHz Bandwidth Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF) 40 35 −30 −35 η 30 25 IM3 (dBc), ACPR (dBc) η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS −40 −45 20 ACPR 15 −50 −55 Gps 10 5 −60 −65 0 −70 10 1 Figure 8. 2 - Carrier N - CDMA ACPR, IM3, Power Gain, Drain Efficiency versus Output Power 0 109 MTBF FACTOR (HOURS X AMPS2) 1.2288 MHz Channel BW −10 −20 −IM3 @ 1.2288 MHz Integrated BW −30 +IM3 @ 1.2288 MHz Integrated BW −40 (dB) Freescale Semiconductor, Inc... Pout, OUTPUT POWER (WATTS) AVG., N−CDMA −50 −60 −70 −ACPR @ 30 kHz Integrated BW +ACPR @ 30 kHz Integrated BW −80 107 106 100 −90 −100 −7.5 108 120 140 160 180 200 220 TJ, JUNCTION TEMPERATURE (°C) −6 −4.5 −3 −1.5 0 1.5 3 4.5 f, FREQUENCY (MHz) Figure 9. 2 - Carrier N - CDMA Spectrum 6 7.5 This above graph displays calculated MTBF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTBF factor by ID2 for MTBF in a particular application. Figure 10. MTBF Factor versus Junction Temperature MRF5S19150R3 MRF5S19150SR3 6 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Zo = 10 Ω f = 1990 MHz Zload f = 1930 MHz f = 1930 MHz Freescale Semiconductor, Inc... Zsource f = 1990 MHz VDD = 28 V, IDQ = 1400 mA, Pout = 32 W Avg. f MHz Zload Ω Zsource Ω 1930 1.89 - j5.24 1.06 - j1.58 1960 1.64 - j5.29 0.88 - j1.37 1990 1.3 - j5.49 0.90 - j1.21 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 11. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF5S19150R3 MRF5S19150SR3 7 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MRF5S19150R3 MRF5S19150SR3 8 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF5S19150R3 MRF5S19150SR3 9 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MRF5S19150R3 MRF5S19150SR3 10 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. DELETED M B (FLANGE) 3 K 2 bbb D T A M B M M M bbb M T A B M ccc M Freescale Semiconductor, Inc... N ccc M T A B M R (INSULATOR) M T A (LID) B M S (LID) M aaa M T A B M M (INSULATOR) M H C F E T A A SEATING PLANE (FLANGE) DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465B - 03 ISSUE B NI - 880 MRF5S19150R3 B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 1 B (FLANGE) K 2 bbb M D T A M B M bbb M T A M B M T A M B R (INSULATOR) ccc M N ccc M M T A M M B S (LID) aaa M T A M B (LID) M (INSULATOR) M H C F E T A A (FLANGE) MOTOROLA RF DEVICE DATA SEATING PLANE DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465C - 02 ISSUE A NI - 880S MRF5S19150SR3 For More Information On This Product, Go to: www.freescale.com MRF5S19150R3 MRF5S19150SR3 11 Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. 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Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA / PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF5S19150R3 MRF5S19150SR3 MOTOROLA RF DEVICE DATA ◊For More Information On This Product, MRF5S19150/D 12 Go to: www.freescale.com