Freescale Semiconductor
Technical Data
MRF9045
Rev. 9, 12/2004
RF Power Field Effect Transistors
N−Channel Enhancement−Mode Lateral MOSFETs
MRF9045LR1
MRF9045LSR1
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large−signal, common−source amplifier applications in 28 volt base station equipment.
• Typical Two−Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD — −32 dBc
945 MHz, 45 W, 28 V
LATERAL N−CHANNEL
BROADBAND
RF POWER MOSFETs
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large−Signal Impedance Parameters
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
CASE 360B−05, STYLE 1
NI−360
MRF9045LR1
CASE 360C−05, STYLE 1
NI−360S
MRF9045LSR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain−Source Voltage
VDSS
−0.5, +65
Vdc
Gate−Source Voltage
VGS
−0.5, + 15
Vdc
PD
125
0.71
175
1
W
W/°C
Storage Temperature Range
Tstg
−65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
1.4
1.0
°C/W
Total Device Dissipation @ TC = 25°C
Derate above 25°C
MRF9045LR1
MRF9045LSR1
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
MRF9045LR1
MRF9045LSR1
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M1 (Minimum)
NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2004. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF9045LR1 MRF9045LSR1
5−1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate−Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 150 µAdc)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 350 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain−Source On−Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.19
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs
—
4
—
S
Input Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
69
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
37
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.5
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics
(continued)
MRF9045LR1 MRF9045LSR1
5−2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Two−Tone Common−Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Gps
17
18.8
—
dB
Two−Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η
38
42
—
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
—
−32
−28
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
—
−14
−9
dB
Two−Tone Common−Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Gps
—
18.5
—
dB
Two−Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
η
—
41
—
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD
—
−33
—
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL
—
13
—
dB
Power Output, 1 dB Compression Point
(VDD = 28 Vdc, Pout = 45 W CW, IDQ = 350 mA,
f1 = 945.0 MHz)
P1dB
—
55
—
W
Common−Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 45 W CW, IDQ = 350 mA,
f1 = 945.0 MHz)
Gps
—
18
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 45 W CW, IDQ = 350 mA,
f1 = 945.0 MHz)
η
—
60
—
%
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 45 W CW, IDQ = 350 mA,
f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency
of Tests)
Ψ
Functional Tests (In Freescale Test Fixture, 50 ohm system)
No Degradation In Output Power
MRF9045LR1 MRF9045LSR1
RF Device Data
Freescale Semiconductor
5−3
B1
B2
C1, C7, C13, C14
C2, C3, C11
C4, C5, C8, C9
C6, C15, C16
C10
C12
C17
L1, L2
Z1
Z2
Z3
Short Ferrite Bead Surface Mount
Long Ferrite Bead Surface Mount
47 pF Chip Capacitors
0.8−8.0 pF Gigatrim Variable Trim Capacitors
10 pF Chip Capacitors
10 µF, 35 V Tantalum Surface Mount Chip Capacitors
2.2 pF Chip Capacitor
0.7 pF Chip Capacitor − MRF9045LS
1.3 pF Chip Capacitor − MRF9045
220 µF, 50 V Electrolytic Capacitor
12.5 nH Surface Mount Inductors, Coilcraft
0.260″ x 0.080″ Microstrip
0.610″ x 0.120″ Microstrip
0.260″ x 0.320″ Microstrip
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
Z14
Z15
PCB
0.360″ x 0.320″ Microstrip
0.240″ x 0.320″ x 0.620″, Taper
0.140″ x 0.620″ Microstrip
0.510″ x 0.620″ Microstrip
0.330″ x 0.320″ Microstrip
0.140″ x 0.320″ Microstrip
0.070″ x 0.080″ Microstrip
0.240″ x 0.080″ Microstrip
0.140″ x 0.080″ Microstrip
0.930″ x 0.080″ Microstrip
0.180″ x 0.080″ Microstrip
0.350″ x 0.080″ Microstrip
Arlon GX−0300−55−22, 0.03″, εr = 2.55
Figure 1. 930 − 960 MHz Broadband Test Circuit Schematic
CUT OUT AREA
MRF9045
900 MHz
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 930 − 960 MHz Broadband Test Circuit Component Layout
MRF9045LR1 MRF9045LSR1
5−4
RF Device Data
Freescale Semiconductor
h
6 34
!"# 6 '&*
, 6 7(
8!
!9 .:2";79#$
</0 !9 )1:4=9>
.
+$ &,&- './0*
$
&
))'3*
12 $&('3*
12
.$
&.(
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'34*
h $(
&&-'5*
TYPICAL CHARACTERISTICS
Figure 3. Class AB Broadband Circuit Performance
, 6 7(
7(
7(
7(
6 34
+ 6 ./0
!"#$ & '(
)* &
6 34
, 6 7(
+ 6 ./0
+ 6 ./0
;3;3;
#?;3;
#?;3;
!"#$ & '(
)* &
Figure 6. Intermodulation Distortion Products
versus Output Power
7(
7(
7(
!"#$ & '(
)* &
Figure 5. Intermodulation Distortion versus
Output Power
12
12$&('3*
.$
&.(
)
'34*
Figure 4. Power Gain versus Output Power
, 6 7(
6 34
+ 6 ./0
+ 6 ./0
h
6 34
, 6 7(
+ 6 ./0
h$(&&-'5*
.$
&.(
)
'34*
12 $&('3*
!"#$ & '(
)* &
Figure 7. Power Gain, Efficiency versus
Output Power
MRF9045LR1 MRF9045LSR1
RF Device Data
Freescale Semiconductor
5−5
! 6 Ω
2!";4
@!:3
+ 6 ./0
+ 6 ./0
+ 6 ./0
+ 6 ./0
6 $ , 6 7($ !"# 6 &
f
MHz
Zload
Ω
Zsource
Ω
930
1.02 + j0.06
2.6 + j0.20
945
1.10 + j0.11
2.6 + j0.16
960
1.15 + j0.25
2.6 + j0.10
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
"#1"#
.:#4?=9>
#8!;<
=4
93; 2#
91"#
.:#4?=9>
#8!;<
Z
source
Z
load
Figure 8. Series Equivalent Source and Load Impedance
MRF9045LR1 MRF9045LSR1
5−6
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
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CASE 360B−05
ISSUE F
NI−360
MRF9045LR1
A
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CASE 360C−05
ISSUE D
NI−360S
MRF9045LSR1
MRF9045LR1 MRF9045LSR1
RF Device Data
Freescale Semiconductor
5−7
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© Freescale Semiconductor, Inc. 2004. All rights reserved.
MRF9045LR1 MRF9045LSR1
Document Number: MRF9045
Rev. 9, 12/2004
5−8
RF Device Data
Freescale Semiconductor