PANASONIC MSG36E41

Transistors
MSG36E41
SiGe HBT type
For low-noise RF amplifier
■ Features
Unit: mm
• Compatible between high breakdown voltage and high cut-off frequency
• Low noise, high-gain amplification
• Two elements incorporated into one package (Each transistor is separated)
• Reduction of the mounting area and assembly cost by one half
0.12+0.03
-0.02
1
• MSG33004 + MSG33001
Overall
Note) *:
0.10
1.00±0.04
0 to 0.02
3
1.00±0.05
Rating
Unit
VCBO
9
V
Collector-emitter voltage
(Base open)
VCEO
6
V
Emitter-base voltage
(Collector open)
VEBO
1
V
IC
100
mA
Collector-base voltage
(Emitter open)
VCBO
9
V
Collector-emitter voltage
(Base open)
VCEO
6
V
Emitter-base voltage
(Collector open)
VEBO
1
0.37+0.03
-0.02
Symbol
(0.10)
Display at No.1 lead
Collector-base voltage
(Emitter open)
Collector current
Tr2
2
(0.35) (0.35)
■ Absolute Maximum Ratings Ta = 25°C
Parameter
4
0.10
■ Basic Part Number
Tr1
5
0.80±0.05
6
1: Base (Tr1)
2: Emitter (Tr1)
3: Base (Tr2)
4: Collector (Tr2)
5: Emitter (Tr2)
6: Collector (Tr1)
SSSMini6-F1 Package
Marking Symbol: 6D
Internal Connection
6
5
4
V
Tr1
Collector current
IC
30
mA
Total power dissipation *
PT
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
1
Tr2
2
3
Copper plate at the collector is 5.0 cm2 on substrate at 10 mm × 12 mm × 0.8 mm.
■ Electrical Characteristics Ta = 25°C ± 3°C
• Tr1
Parameter
Symbol
Max
Unit
Collector-base cutoff current (Emitter open)
ICBO
VCB = 9 V, IE = 0
Conditions
Min
Typ
1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 6 V, IB = 0
1
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 1 V, IC = 0
1
µA
Forward current transfer ratio
hFE
VCE = 3 V, IC = 15 mA
Transition frequency *
fT
VCE = 3 V, IC = 30 mA, f = 2 GHz
Forward transfer gain *
S21e2
VCE = 3 V, IC = 30 mA, f = 2 GHz
Noise figure *
NF
VCE = 3 V, IC = 15 mA, f = 2 GHz
1.4
2.0
dB
Collector output capacitance
(Common base, input open circuited) *
Cob
VCB = 3 V, IE = 0, f = 1 MHz
0.6
0.9
pF
100
220
17
6.0

GHz
9.0
dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Observe precautions for handling. Electrostatic sensitive devices.
3. *: Verified by random sampling
Publication date: November 2004
SJC00319BED
1
MSG36E41
■ Electrical Characteristics (continued) Ta = 25°C ± 3°C
• Tr2
Parameter
Symbol
Max
Unit
Collector-base cutoff current (Emitter open)
ICBO
VCB = 9 V, IE = 0
Conditions
Min
Typ
1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 6 V, IB = 0
1
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 1 V, IC = 0
1
µA
Forward current transfer ratio
hFE
VCE = 3 V, IC = 3 mA
Transition frequency *
fT
VCE = 3 V, IC = 10 mA, f = 2 GHz
Forward transfer gain *
S21e2
VCE = 3 V, IC = 10 mA, f = 2 GHz
Noise figure *
NF
VCE = 3 V, IC = 3 mA, f = 2 GHz
1.4
2.0
dB
Collector output capacitance
(Common base, input open circuited) *
Cob
VCB = 3 V, IE = 0, f = 1 MHz
0.3
0.6
pF
100
220
19
9.0

GHz
11.0
dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Observe precautions for handling. Electrostatic sensitive devices.
3. *: Verified by random sampling
Common characteristics chart
PC  Ta
Collector power dissipation PC (mW)
120
100
80
60
40
20
0
0
40
80
120
Ambient temperature Ta (°C)
2
SJC00319BED
MSG36E41
Characteristics charts of Tr1
IC  VCE
hFE  IC
8
50 µA
40 µA
30 µA
4
20 µA
120
100
80
60
40
0
1
2
3
4
5
6
20
15
10
5
0
0
1
10
0
100
1
10
100
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob  VCB
GP  IC
S21e2  IC
15
f = 1 MHz
Ta = 25°C
14
VCE = 3 V
f = 2 GHz
Forward transfer gain S21e (dB)
1
VCE = 3 V
f = 2 GHz
12
2
10
Power gain GP (dB)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
140
20
10 µA
0
Transition frequency fT (GHz)
60 µA
2
5
0
−5
0.1
0
2
4
6
8
10
−10
0.1
12
1
10
Collector current IC (mA)
NF  IC
S11 , S22
6
8
6
4
2
1
10
100
Collector current IC (mA)
VCE = 3 V
IC = 30 mA
1.0
VCE = 3 V
f = 2 GHz
10
0
100
Collector-base voltage VCB (V)
7
Noise figure NF (dB)
Forward current transfer ratio hFE
Collector current IC (mA)
70 µA
6
VCE = 3 V
f = 2 GHz
160
80 µA
10
25
VCE = 3 V
IB = 10 µA step
12
0
fT  I C
180
14
0.5
2.0
5
S11
4
0
0.3
1.0
∞
3.0
3
S22
2
1
−2.0
− 0.5
0
0.1
1
10
100
−1.0
Collector current IC (mA)
SJC00319BED
3
MSG36E41
S21e2 , S12e2  f
50
30
2
Forward transfer gain S21e ,
2
Reverse transfer gain S12e (dB)
40
20
10
2
S21e
0
−10
−20
2
S12e
−30
−40
−50
0
0.5
1.0
1.5
2.0
2.5
3.0
Frequency f (GHz)
4
SJC00319BED
MSG36E41
Characteristics charts of Tr2
IC  VCE
IB = 10 µA step
VCE = 3 V
60 µA
50 µA
8
40 µA
6
30 µA
4
20 µA
2
10 µA
0
1
2
3
4
5
VCE = 3 V
f = 2 GHz
140
120
100
80
60
40
20
15
10
5
20
0
0.01
6
0.1
1
10
0
100
1
10
100
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob  VCB
GP  IC
S21e2  IC
0.8
15
f = 1 MHz
14
VCE = 3 V
f = 2 GHz
Forward transfer gain S21e (dB)
0.7
VCE = 3 V
f = 2 GHz
12
2
10
0.6
Power gain GP (dB)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Forward current transfer ratio hFE
Collector current IC (mA)
70 µA
10
0
fT  I C
25
160
80 µA
12
0.5
0.4
0.3
5
0
−5
0.2
0.1
0
1
2
3
4
5
−10
0.1
6
1
10
Collector current IC (mA)
NF  IC
S11 , S22
6
8
6
4
2
1
10
100
Collector current IC (mA)
VCE = 3 V
IC = 10 mA
1.0
VCE = 3 V
f = 2 GHz
10
0
100
Collector-base voltage VCB (V)
7
Noise figure NF (dB)
hFE  IC
180
Transition frequency fT (GHz)
14
0.5
2.0
5
4
0
0.3
3
1.0
∞
3.0
S11
2
S22
1
−2.0
− 0.5
0
0.1
1
10
100
−1.0
Collector current IC (mA)
SJC00319BED
5
MSG36E41
S21e2 , S12e2  f
50
30
2
Forward transfer gain S21e ,
2
Reverse transfer gain S12e (dB)
40
20
10
S21e
0
2
−10
−20
S12e
−30
2
−40
−50
0
0.5
1.0
1.5
2.0
2.5
3.0
Frequency f (GHz)
6
SJC00319BED
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP