MUN2111T1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−59 package which is designed for low power surface mount applications. http://onsemi.com PIN 3 COLLECTOR (OUTPUT) R1 PIN 2 BASE (INPUT) R2 Features • • • • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: Class 1 − Machine Model: Class B The SC−59 Package Can be Soldered Using Wave or Reflow The Modified Gull−Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die Pb−Free Packages are Available MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Value Unit Collector − Base Voltage VCBO 50 Vdc Collector − Emitter Voltage VCEO 50 Vdc IC 100 mAdc Total Device Dissipation TA = 25°C Derate above 25°C Symbol Max Unit PD 230 (Note 1) 338 (Note 2) 1.8 (Note 1) 2.7 (Note 2) mW °C/W Thermal Resistance, Junction−to−Ambient RqJA 540 (Note 1) 370 (Note 2) °C/W Thermal Resistance, Junction−to−Lead RqJL 264 (Note 1) 287 (Note 2) °C/W Junction and Storage Temperature Range September, 2006 − Rev. 17 1 SC−59 CASE 318D PLASTIC 6x M G G TJ, Tstg 6x = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION °C −55 to +150 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 inch Pad. © Semiconductor Components Industries, LLC, 2006 2 1 THERMAL CHARACTERISTICS Characteristic 3 MARKING DIAGRAM Symbol Collector Current PIN 1 EMITTER (GROUND) 1 See detailed ordering and shipping information on page 2 of this data sheet. DEVICE MARKING INFORMATION See device marking table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MUN2111T1/D MUN2111T1 Series DEVICE MARKING AND RESISTOR VALUES Device Package Marking R1 (K) R2 (K) SC−59 6A 10 10 MUN2111T1G SC−59 (Pb−Free) 6A 10 10 MUN2111T3G SC−59 (Pb−Free) 6A 10 10 SC−59 6B 22 22 SC−59 (Pb−Free) 6B 22 22 SC−59 6C 47 47 SC−59 (Pb−Free) 6C 47 47 SC−59 6D 10 47 SC−59 (Pb−Free) 6D 10 47 SC−59 6E 10 ∞ SC−59 (Pb−Free) 6E 10 ∞ SC−59 6F 4.7 ∞ SC−59 (Pb−Free) 6F 4.7 ∞ SC−59 6G 1.0 1.0 SC−59 (Pb−Free) 6G 1.0 1.0 SC−59 6H 2.2 2.2 SC−59 (Pb−Free) 6H 2.2 2.2 SC−59 6J 4.7 4.7 SC−59 (Pb−Free) 6J 4.7 4.7 SC−59 6K 4.7 47 SC−59 (Pb−Free) 6K 4.7 47 SC−59 6L 22 47 SC−59 (Pb−Free) 6L 22 47 SC−59 6N 100 100 SC−59 (Pb−Free) 6N 100 100 SC−59 6P 47 22 SC−59 (Pb−Free) 6P 47 22 SC−59 6T 47 ∞ SC−59 (Pb−Free) 6T 47 ∞ MUN2111T1 MUN2112T1 MUN2112T1G MUN2113T1 MUN2113T1G MUN2114T1 MUN2114T1G MUN2115T1 (Note 3) MUN2115T1G (Note 3) MUN2116T1 (Note 3) MUN2116T1G (Note 3) MUN2130T1 (Note 3) MUN2130T1G (Note 3) MUN2131T1 (Note 3) MUN2131T1G (Note 3) MUN2132T1 (Note 3) MUN2132T1G (Note 3) MUN2133T1 (Note 3) MUN2133T1G (Note 3) MUN2134T1 (Note 3) MUN2134T1G (Note 3) MUN2136T1 MUN2136T1G MUN2137T1 MUN2137T1G MUN2140T1 (Note 3) MUN2140T1G (Note 3) Shipping † 3000 / Tape & Reel 10,000 / Tape & Reel 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3. New resistor combinations. Updated curves to follow in subsequent data sheets. http://onsemi.com 2 MUN2111T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc IEBO − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.05 0.13 0.20 mAdc V(BR)CBO 50 − − Vdc V(BR)CEO 50 − − Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 120 60 100 140 140 250 250 5.0 15 27 140 130 150 140 250 − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Characteristic OFF CHARACTERISTICS Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2136T1 MUN2137T1 MUN2140T1 Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector−Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2136T1 MUN2137T1 MUN2140T1 Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(sat) MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2130T1 MUN2133T1 MUN2136T1 MUN2137T1 MUN2131T1 MUN2116T1 MUN2132T1 MUN2134T1 MUN2140T1 (IC = 10 mA, IB = 5.0 mA) (IC = 10 mA, IB = 1.0 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) Vdc VOL MUN2111T1 MUN2112T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2113T1 MUN2140T1 MUN2136T1 MUN2137T1 (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 3 Vdc MUN2111T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 − − − − − − − − − − − − − − − − − − − − − − − − − − − − 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 70 32.9 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 100 47 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 130 61.1 61.1 0.8 0.17 − 0.8 0.055 0.38 1.7 1.0 0.21 − 1.0 0.1 0.47 2.1 1.2 0.25 − 1.2 0.185 0.56 2.6 Unit ON CHARACTERISTICS (Note 4) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2133T1 MUN2134T1 MUN2136T1 MUN2137T1 MUN2130T1 MUN2115T1 MUN2116T1 MUN2131T1 MUN2132T1 MUN2140T1 (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) Input Resistor MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2136T1 MUN2137T1 MUN2140T1 Resistor Ratio MUN2111T1/MUN2112T1/MUN2113T1/ MUN2136T1 MUN2114T1 MUN2115T1/MUN2116T1/MUN2140T1 MUN2130T1/MUN2131T1/MUN2132T1 MUN2133T1 MUN2134T1 MUN2137T1 R1 Vdc kW R1/R2 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. +12 V PD, POWER DISSIPATION (mW) 350 300 250 Typical Application for PNP BRTs 200 150 RqJA= 370°C/W 100 LOAD 50 0 −50 0 50 100 150 TA, AMBIENT TEMPERATURE (5°C) Figure 1. Derating Curve Figure 2. Inexpensive, Unregulated Current Source http://onsemi.com 4 MUN2111T1 Series 1000 1 VCE = 10 V IC/IB = 10 TA = −2°5C hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN2111T1 25°C 75°C 0.1 0.01 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA = 75°C 100 −25°C 10 80 1 10 IC, COLLECTOR CURRENT (mA) Figure 3. VCE(sat) vs. IC 100 IC, COLLECTOR CURRENT (mA) 1 0 10 1 0.1 VO = 5 V 0.01 0.001 50 TA = −25°C 0 Figure 5. Output Capacitance 1 6 7 8 2 3 4 5 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = −25°C 10 25°C 75°C 1 0.1 0 10 9 Figure 6. Output Current vs. Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 2 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25°C 75°C f = 1 MHz lE = 0 V TA = 25°C 0 100 Figure 4. DC Current Gain 4 3 25°C 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 7. Input Voltage vs. Output Current http://onsemi.com 5 50 10 MUN2111T1 Series 1000 10 VCE = 10 V IC/IB = 10 TA = −25°C hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN2112T1 25°C 1 75°C 0.1 0.01 TA = 75°C 100 10 0 20 40 60 IC, COLLECTOR CURRENT (mA) 1 80 10 Figure 9. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 4 f = 1 MHz lE = 0 V TA = 25°C 3 2 1 0 25°C 75°C 10 TA = −25°C 1 0.1 0.01 VO = 5 V 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 1 0 Figure 10. Output Capacitance 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = −25°C 25°C 10 75°C 1 0.1 0 9 Figure 11. Output Current vs. Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 10 0 IC, COLLECTOR CURRENT (mA) Figure 8. VCE(sat) vs. IC 0 25°C −25°C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 12. Input Voltage vs. Output Current http://onsemi.com 6 50 10 MUN2111T1 Series 1 1000 IC/IB = 10 TA = −25°C 25°C 75°C 0.1 0.01 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN2113T1 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA = 75°C 25°C 10 40 −25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 14. DC Current Gain Figure 13. VCE(sat) vs. IC IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz lE = 0 V TA = 25°C 0.6 0.4 0.2 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) −25°C 0.1 0.01 VO = 5 V 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = −25°C 25°C 10 75°C 1 0 9 Figure 16. Output Current vs. Input Voltage 100 0.1 25°C 1 0.001 0 50 TA = 75°C 10 Figure 15. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1 0.8 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 17. Input Voltage vs. Output Current http://onsemi.com 7 50 10 MUN2111T1 Series 180 1 IC/IB = 10 25°C 140 25°C 0.1 −25°C 120 75°C 100 0.01 80 60 40 20 0.00 0 1 20 40 60 IC, COLLECTOR CURRENT (mA) 0 80 1 2 4.5 6 8 10 15 20 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) 100 3.5 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 4 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 TA = 75°C 10 VO = 5 V 1 20 25 30 35 40 45 50 25°C −25°C 0 2 4 Figure 20. Output Capacitance TA = −25°C 25°C 75°C 1 VO = 0.2 V 0 8 Figure 21. Output Current vs. Input Voltage 10 0.1 6 Vin, INPUT VOLTAGE (VOLTS) VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) 0 4 Figure 19. DC Current Gain Figure 18. VCE(sat) vs. IC Cob, CAPACITANCE (pF) TA = 75°C VCE = 10 V 160 TA = −25°C hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN2114T1 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 22. Input Voltage vs. Output Current http://onsemi.com 8 50 10 MUN2111T1 Series 1 1000 IC/IB = 10 IC/IB =10 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS − MUN2131T1 25°C 75°C 0.1 −25°C 0.01 100 25°C 75°C 10 −25°C 1 0 5 10 15 20 25 30 35 1 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 23. VCE(sat) vs. IC Figure 24. DC Current Gain 12 10 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 A TA = 25°C 8 6 4 2 0 75°C −25°C 10 1 TA = 25°C VO = 5 V 0.01 0.01 0 5 10 15 20 25 30 35 40 45 50 55 0 1 2 3 4 5 6 7 VR, REVERSE BIAS VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 25. Output Capacitance Figure 26. Output Current vs. Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 TA = −25°C 75°C 1 25°C VO = 0.2 V 0.1 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) Figure 27. Input Voltage vs. Output Current http://onsemi.com 9 25 8 MUN2111T1 Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN2133T1 75°C 0.1 −25°C 25°C 0.01 0.001 30 20 40 10 IC, COLLECTOR CURRENT (mA) 0 75°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 28. VCE(sat) versus IC 100 Figure 29. DC Current Gain 8 100 6 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 7 5 4 3 2 1 0 75°C 10 25°C 1 0.1 TA = −25°C 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0 Figure 30. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 10 Figure 31. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 25°C 10 1 50 TA = −25°C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 32. Input Voltage versus Output Current http://onsemi.com 10 50 MUN2111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN2136T1 1000 75°C hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 0.1 75°C 25°C −25°C TA = −25°C 100 25°C 10 VCE = 10 V IC/IB = 10 0.01 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 1 7 1 10 IC, COLLECTOR CURRENT (mA) Figure 33. Maximum Collector Voltage vs. Collector Current Figure 34. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 1.0 f = 1 MHz IE = 0 V TA = 25°C 0.8 0.6 0.4 0.2 25°C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 TA = −25°C 1 VO = 5 V 0 1 2 3 4 TA = −25°C 10 VO = 0.2 V 75°C 0 2 6 7 8 9 Figure 36. Output Current vs. Input Voltage 100 1 5 Vin, INPUT VOLTAGE (VOLTS) Figure 35. Output Capacitance 25°C 75°C 10 0.1 0 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.2 0 100 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 Figure 37. Input Voltage vs. Output Current http://onsemi.com 11 20 10 MUN2111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN2137T1 1000 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 TA = −25°C 75°C 0.1 25°C 75°C TA = −25°C 100 25°C VCE = 10 V IC/IB = 10 0.01 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 10 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 38. Maximum Collector Voltage vs. Collector Current Figure 39. DC Current Gain 100 1.2 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 1.0 0.8 0.6 0.4 0.2 75°C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 TA = −25°C 10 25°C 1 0.1 0.01 0.001 0 VO = 5 V 0 1 2 3 4 VO = 0.2 V 1 TA = −25°C 75°C 25°C 0 6 7 8 9 10 Figure 41. Output Current vs. Input Voltage 100 10 5 Vin, INPUT VOLTAGE (VOLTS) Figure 40. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.4 0 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) Figure 42. Input Voltage vs. Output Current http://onsemi.com 12 25 11 MUN2111T1 Series PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE G D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3 HE 2 E 1 DIM A A1 b c D E e L HE b e C A MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110 MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR L A1 MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50 SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 13 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MUN2111T1/D