MUR620CT Preferred Device SWITCHMODE Power Rectifier . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: http://onsemi.com • Ultrafast 35 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package ULTRAFAST RECTIFIER 6.0 AMPERES 200 VOLTS Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.9 grams (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 1 • Lead Temperature for Soldering Purposes: • • 2, 4 260°C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: U620 3 4 MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 200 V Average Rectified Forward Voltage (Rated VR, TC = 130°C) Per Diode Total Device IF(AV) Peak Repetitive Forward Current per Diode Leg (Rated VR, Square Wave, 20 kHz, TC = 130°C) IFRM 6.0 A Non–Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 75 A Operating Junction and Storage Temperature Range A 3.0 6.0 1 2 3 TO–220AB CASE 221A PLASTIC MARKING DIAGRAM TJ, Tstg °C –65 to +175 U620 U620 = Device Code ORDERING INFORMATION Device Package Shipping MUR620CT TO–220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 – Rev. 2 1 Publication Order Number: MUR620CT/D MUR620CT THERMAL CHARACTERISTICS (Per Diode Leg) Rating Thermal Resistance, Junction to Case Symbol Typical Maximum Unit RθJC 5.0–6.0 7.0 °C/W 0.80 0.94 0.895 0.975 2.0–10 0.01–3.0 250 5.0 20–30 35 ELECTRICAL CHARACTERISTICS (Per Diode Leg) Instantaneous Forward Voltage (Note 1.) (iF = 3.0 Amps, TC = 150°C) (iF = 3.0 Amps, TC = 25°C) vF Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 150°C) (Rated dc Voltage, TC = 25°C) iR Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amps/µs) trr Volts µA ns 100 10 7.0 5.0 I R, REVERSE CURRENT (A) µ i F , INSTANTANEOUS FORWARD CURRENT (AMPS) 1. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%. 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 TJ = 175°C 25°C 1.2 TJ = 175°C 4.0 2.0 1.0 150°C 0.4 0.2 0.1 100°C 0.04 0.02 0.01 0.004 0.002 0.001 150°C 100°C 0.4 0.6 0.8 1.0 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 40 20 10 25°C 0 20 40 60 80 100 120 140 160 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current http://onsemi.com 2 180 200 IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 8.0 Rated VR Applied 7.0 6.0 DC 5.0 4.0 SQUARE WAVE 3.0 2.0 1.0 0 100 120 180 140 160 TC, CASE TEMPERATURE (°C) 7.0 6.0 dc 5.0 SQUARE WAVE dc 3.0 2.0 SQUARE WAVE RJA = 60°C/W (free air, no heat sink) 1.0 0 0 20 40 60 80 7.0 DC 5.0 4.0 3.0 2.0 1.0 1 120 140 160 180 200 Figure 4. Total Device Current Derating, Ambient SQUARE WAVE 6.0 0 100 TA, AMBIENT TEMPERATURE (°C) 8.0 0 RJA = 16°C/W with a typical TO-220 heat sink 4.0 Figure 3. Total Device Current Derating, Case PF(AV), AVERAGE POWER DISSIPATION (WATTS) I F(AV), AVERAGE FORWARD CURRENT (AMPS) MUR620CT 2 3 4 5 6 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 5. Power Dissipation http://onsemi.com 3 7 8 MUR620CT PACKAGE DIMENSIONS TO–220 THREE–LEAD TO–220AB CASE 221A–09 ISSUE AA –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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