SEME 2N3019CSM LAB HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) FEATURES 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) 0.31 rad. (0.012) A = 1.02 ± 0.10 (0.04 ± 0.004) PAD 1 – Base • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) • CECC SCREENING OPTIONS AVAILABLE A 1.40 (0.055) max. Underside View PAD 2 – Emitter PAD 3 – Collector SOT23 CERAMIC (CSM) LCC1 PACKAGE • SPACE QUALITY LEVELS AVAILABLE • HIGH SPEED SATURATED SWITCHING APPLICATIONS: For high reliablitity general purpose applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD Rja Tj Tstg Semelab plc. Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation Derate above 50°C Thermal Resistance Junction to Ambient Max Junction Temperature Storage Temperature Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 140V 80V 7V 1A 350mW 2.00mW / °C 350°C / W 200°C –55 to 200°C Prelim. 1/94 SEME 2N3019CSM LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit VCEO* Collector – Emitter Voltage IC = 10mA 80 V V(BR)CBO* Collector – Base Breakdown Voltage IC = 10µA 140 V V(BR)EBO* Emitter – Base Breakdown Voltage IE = 10µA IC = 0 7 V VCB = 90V VBE = 0 VCB = 90V VBE = 0 ICBO Collector Cut-off Current Tamb = 150°C IEBO Emitter Cut-off Current VCE(sat)* Collector – Emitter Saturation Voltage VBE(sat)* Base – Emitter Saturation Voltage hFE* VEB = 5V DC Current Gain 10 nA 10 µA 10 nA IC = 150mA IB = 15mA 0.20 IC = 500mA IB = 50mA 0.50 IC = 150mA IB = 15mA 1.1 IC = 0.1mA VCE = 10V 50 IC = 10mA VCE = 10V 90 IC = 150mA VCE = 10V 100 IC = 500mA VCE = 10V 50 IC = 1A VCE = 10V 15 VCE = 0.5V 40 Tamb = –55°C IC = 150mA 300 V V — t* Pulse test tp = 300µs , δ ≤ 2% DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit fT Transition Frequency IC = 50mA VCE = 10V f = 20MHz CEBO Capacitance VEB = 0.5V IC = 0 f = 1.0MHz 60 pF CCBO Input Capacitance VCB = 10V IE = 0 f = 1.0MHz 12 pF hfe Small Signal Current Gain IC = 1mA VCE = 5V f = 1kHz 400 — NF Noise Figure IC = 100µA VCE = 10V f = 1kHz 4 db Semelab plc. Rg = 1KΩ Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 100 80 MHz Prelim. 1/94