PHILIPS MZ0912B100Y

DISCRETE SEMICONDUCTORS
DATA SHEET
MX0912B100Y; MZ0912B100Y
NPN microwave power transistors
Product specification
Supersedes data of June 1992
1997 Feb 20
Philips Semiconductors
Product specification
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
PINNING
FEATURES
• Interdigitated structure provides high emitter efficiency
PIN
• Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
1
collector
• Gold metallization realizes very stable characteristics
and excellent lifetime
2
emitter
3
base connected to flange
DESCRIPTION
• Multicell geometry improves power sharing and low
thermal resistance
1
olumns
• Input and output matching cell allows an easier design
of circuits.
c
b
APPLICATIONS
3
3
e
• Common base class-C broadband pulse power
amplifiers operating at 960 to 1215 MHz for TACAN
application.
2
MAM045
Top view
Fig.1 Simplified outline and symbol (SOT439A).
DESCRIPTION
NPN silicon planar epitaxial microwave power transistors.
The MX0912B100Y has a SOT439A metal ceramic flange
package and improved output prematching cells. It is
recommended for new designs.
handbook, halfpage
1
c
The MZ0912B100Y has a SOT443A metal ceramic flange
package with the base connected to the flange. It is
mounted in common base configuration and specified in
class C.
b
3
e
2
Top view
MAM314
Fig.2 Simplified outline and symbol (SOT443A).
QUICK REFERENCE DATA
Microwave performance at Tmb ≤ 25 °C in a common base class-C broadband amplifier.
MODE OF OPERATION
Class-C; tp = 10 µs; δ = 10 %
f
(GHz)
VCC
(V)
PL
(W)
GP
(dB)
ηC
(%)
Zi; ZL
(Ω)
0.960 to 1.215
50
>100
>7
>42
see Figs 8 and 9
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 20
2
Philips Semiconductors
Product specification
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
65
V
VCES
collector-emitter voltage
RBE = 0 Ω
−
60
V
VCEO
collector-emitter voltage
open base
−
20
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
tp ≤ 10 µs; δ ≤ 10 %
−
6
A
Ptot
total power dissipation
(peak power)
tp ≤ 10 µs; δ ≤ 10 %;
Tmb = 75 °C
−
290
W
Tstg
storage temperature
−65
+200
°C
Tj
operating junction temperature
−
200
°C
Tsld
soldering temperature
−
235
°C
up to 0.2 mm from ceramic;
t ≤ 10 s
MGL046
300
handbook, halfpage
Ptot
(W)
200
100
0
−50
0
100
Tmb (°C)
200
tp = 10 µs; δ = 10 %; Ptot max = 290 W.
Fig.3
Maximum power dissipation derating as a
function of mounting-base temperature.
1997 Feb 20
3
Philips Semiconductors
Product specification
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting-base Tj = 125 °C
3.2
K/W
Rth mb-h
thermal resistance from mounting-base to heatsink Tj = 125 °C; note 1
0.2
K/W
Zth j−h
thermal impedance from junction to heatsink
0.43
K/W
tp = 10 µs; δ = 10 %;
Tj = 125 °C; notes 1 and 2
Notes
1. See “Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
collector cut-off current
MAX.
UNIT
VCB = 65 V; IE = 0
40
mA
VCB = 50 V; IE = 0
4
mA
ICES
collector cut-off current
VCB = 60 V; RBE = 0
40
mA
IEBO
emitter cut-off current
VEB = 1.5 V; IC = 0
400
µA
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C measured in the test jig as shown in Fig.7 and working in class C broadband
in pulse mode; note 1.
MODE OF OPERATION
Class C;
tp = 10 µs; δ = 10%
tp = 300 µs; δ = 10%;
see Fig.6
f
(GHz)
VCC
(V)(2)
PL
(W)
Gp
(dB)
ηC
(%)
0.960 to 1.215
50
≥100
typ. 115
≥7
typ. 7.6
≥42
typ. 44
1.03 to 1.09
50
typ. 125
typ. 8
typ. 50
Zi/ZL
(Ω)
see Figs 8 and 9
Notes
1. Operating conditions and performance for other pulse formats can be made available on request.
2. VCC during pulse.
1997 Feb 20
4
Philips Semiconductors
Product specification
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
MGL047
130
MGL048
50
handbook, halfpage
handbook, halfpage
PL
(W)
ηC
(%)
120
45
110
0.95
1.05
1.15
f (GHz)
40
0.95
1.25
1.05
1.15
f (GHz)
1.25
VCC = 50 V; tp = 10 µs; δ = 10%.
VCC = 50 V; tp = 10 µs; δ = 10%.
Fig.5
Fig.4
Load power as a function of frequency.
(In broadband test circuit as shown in Fig.7)
1997 Feb 20
5
Collector efficiency as a function of
frequency. (In broadband test circuit as
shown in Fig.7)
Philips Semiconductors
Product specification
NPN microwave power transistors
handbook, full pagewidth
1 µs
MX0912B100Y; MZ0912B100Y
1 µs
300 µs
3 ms
MGK066
Fig.6 Pulse definition.
List of components
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
L1
0.65 mm diameter copper wire −
L2
4 turns 0.65 mm diameter
copper wire
−
C1
capacitor
100 pF
−
ATC, ref. 100A101KP50X
C2
tantalum capacitor
10 µF; 50 V
−
−
C3
electrolytic capacitor
470 µF; 63 V −
−
C4
feedthrough bypass capacitor
−
−
Erie, ref. 1250-003
C5, C6
variable gigatrim capacitor
0.6 to 4.5 pF
−
Tekelec, ref. 727.1
1997 Feb 20
6
total length = 12 mm;
height of loop = 12 mm
−
int. dia. 3 mm; L = 5 mm
−
Philips Semiconductors
Product specification
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
30
handbook, full pagewidth
18
30
2 3
3
10
4
3
3 1 3
10
40
40
0.635
0.635
5
12.5
5
7
10
16
+VCC
C3
C4
C2
L1
L2
C1
C5
MGK067
Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity: εr = 10.
Fig.7 Broadband test circuit.
1997 Feb 20
7
Philips Semiconductors
Product specification
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
1
handbook, full pagewidth
0.5
2
0.2
5
1.215 GHz
10
+j
0
0.2
0.5
1
2
5
∞
10
0.960 GHz
−j
10
5
0.2
2
0.5
MGL044
1
VCC = 50 V; Zo = 10 Ω; PL = 100 W.
Fig.8 Input impedance as a function of frequency associated with optimum load impedance.
1
handbook, full pagewidth
0.5
2
0.2
5
10
+j
0
0.2
0.5
1
2
5
∞
10
1.215 GHz
−j
0.960 GHz
10
5
0.2
2
0.5
1
MGL045
VCC = 50 V; Zo = 10 Ω.; PL = 100 W.
Fig.9 Optimum load impedance as a function of frequency associated with input impedance.
1997 Feb 20
8
Philips Semiconductors
Product specification
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
PACKAGE OUTLINES
12.85 max
handbook, full pagewidth
0.15 max
6
max
3.3
2.9
1.6 max
3
23 max
seating plane
3.7
max
2.7
min
1
9.85
max
3.3
2.7
min
2
MBC881
8.25
16.5
Dimensions in mm.
Torque on nut: max 0.4 Nm.
Recommended screw: M3
Recommended pitch for mounting screw: 19 mm.
Fig.10 SOT439A.
1997 Feb 20
9
10.3
10.0
Philips Semiconductors
Product specification
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
24 max
handbook, full pagewidth
0.5 Y
0.1
6.4
max
3.5
2.9
3
1.7 max
seating plane
Y
3.1
1
4 min
0.5 X
X
10.5
max
3.4
3.2
10.5
max
23
max
0.5 X
2
MBC663
16.5
0.5 Y
Dimensions in mm.
Torque on nut: max 0.5 Nm.
Recommended screw: M3
Fig.11 SOT443A.
1997 Feb 20
10
Philips Semiconductors
Product specification
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 20
11
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© Philips Electronics N.V. 1997
SCA53
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Printed in The Netherlands
127147/00/02/pp12
Date of release: 1997 Feb 20
Document order number:
9397 750 01717