NEC NE33284A

DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE33284A
L to X BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
PACKAGE DIMENSIONS
(Unit: mm)
The NE33284A is a Herero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
1.78 ±0.2
low noise and high associated gain make it suitable for GPS,
TVRO and another commercial systems.
0.5 TYP.
1
L
FEATURES
L
NF = 0.35 dB TYP., Ga = 15.0 dB TYP. at f = 4 GHz
• Gate Width: Wg = 280 µm
1.78 ±0.2
• Super Low Noise Figure & High Associated Gain
ORDERING INFORMATION
U
2
4
L
PART NUMBER
LEAD LENGTH
NE33284A-SL
STICK
L = 1.7 mm MIN.
NE33284A-T1
NE33284A-T1A
Tape & reel
L = 1.0 ±0.2 mm
L
0.5 TYP.
1.7 MAX.
3
SUPPLYING
FORM
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
VDS
4.0
Gate to Source Voltage
VGS
–3.0
V
ID
IDSS
mA
Drain Current
V
Total Power Dissipation
Ptot
165
mW
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg
–65 to +150
˚C
0.1
Drain to Source Voltage
1. Source
2. Drain
3. Source
4. Gate
RECOMMENDED OPERATING CONDITION (TA = 25 ˚C)
CHARACTERISTIC
SYMBOL
TYP.
MAX.
Unit
VDS
2
3
V
Drain Current
ID
10
20
mA
Input Power
Pin
0
dBm
Drain to Source Voltage
Document No. P10874EJ2V0DS00 (2nd edition)
(Previous No. TD-2369)
Date Published October 1995 P
Printed in Japan
MIN.
©
1995
NE33284A
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
0.5
10
µA
VGS = –3 V
VDS = 2 V, VGS = 0
Gate to Source Leak Current
IGSO
Saturated Drain Current
IDSS
15
40
80
mA
VGS(off)
–0.2
–0.8
–2.0
V
VDS = 2 V, ID = 100 µA
Transconductance
gm
45
70
mS
VDS = 2 V, ID = 10 mA
Noise Figure
NF
dB
f = 12 GHz
Gate to Source Cutoff Voltage
Associated Gain
Ga
0.75
1.0
0.35
0.45
9.5
10.5
13.0
15.0
f = 4 GHz
dB
VDS = 2 V
ID = 10 mA
f = 12 GHz
f = 4 GHz
PRECAUTION: Avoid high static voltage and electric fields, because this device is Hetero Junction field effect
transistor with AlGaAs shottky barrier gate.
2
NE33284A
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
250
VGS = 0 V
200
ID – Drain Current – mA
Ptot – Total Power Dissipation – mW
50
150
100
50
40
–0.2 V
30
–0.6 V
10
0
50
100
150
200
250
0
TA – Ambient Temperature – ˚C
1
2
3
4
5
VDS – Drain to Source Voltage – V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
24
50
MSG. – Maximum Stable Gain – dB
MAG. – Maximum Available Gain – dB
2
| S21s | – Forward Insertion Gain – dB
VDS = 2 V
40
ID – Drain Current – mA
–0.4 V
20
30
20
10
0
–2.0
–1.0
0
VGS – Gate to Source Voltage – V
VDS = 2 V
ID = 10 mA
20
MSG.
16
| IS21s |
2
MAG.
12
8
4
1
2
4
6
8 10
14
20
30
f – Frequency – GHz
Gain Calculations
1 + | ∆ |2 − | S11 |2 − | S 22 |2
2 | S12 || S 21 |
MSG. =
| S 21 |
| S12 |
K=
MAG. =
| S 21 |
(K ± K 2 − 1)
| S12 |
∆ = S11 ⋅ S 22 − S 21 ⋅ S12
3
NE33284A
S-Parameters
VDS = 2 V, ID = 10 mA
START 500 MHz, STOP 18 GHz, STEP 500 MHz
S11
S12
1.0
+90˚
Marker
1: 4 GHz
2: 8 GHz
3: 12 GHz
4: 16 GHz
5: 18 GHz
2.0
0.5
+45˚
+135˚
5
0
4
0.5
1.0
2.0
∞
1
±180˚
0
2
3
5
4
3
2
–0.5
–1.0
–45˚
–135˚
–2.0
1
–90˚
Rmax. = 1
S21
S22
+90˚
1.0
+135˚
Rmax. = 0.25
2.0
0.5
+45˚
5
1
2
±180˚
0
3
5
0
∞
4
3
4
2
–135˚
–45˚
–90˚
4
Rmax. = 7.5
–0.5
1
–2.0
–1.0
Rmax. = 1
NE33284A
MAG. AND ANG.
VDS = 2 V, ID = 10 mA
FREQUENCY
S21
S11
ANG.
MAG.
S12
MAG.
500.0000
.916
–9.3
5.239
170.8
.011
83.5
.618
–7.0
1000.0000
.903
–17.2
5.144
162.6
.021
76.8
.609
–13.8
1500.0000
.912
–26.2
5.206
154.0
.032
71.7
.598
–20.5
2000.0000
.903
–34.3
5.147
146.4
.041
66.1
.580
–27.6
2500.0000
.900
–44.2
5.125
136.7
.050
60.3
.563
–34.0
3000.0000
.876
–53.4
5.012
127.3
.059
55.0
.541
–40.4
3500.0000
.845
–62.4
4.862
118.4
.065
49.9
.517
–46.2
4000.0000
.811
–70.6
4.683
110.7
.071
45.6
.493
–52.4
4500.0000
.778
–78.8
4.533
102.7
.076
41.7
.469
–58.6
5000.0000
.754
–86.7
4.378
95.2
.082
37.8
.447
–65.1
5500.0000
.732
–94.8
4.251
87.5
.086
33.7
.425
–71.6
6000.0000
.707
–102.7
4.093
80.0
.091
29.9
.405
–78.3
6500.0000
.681
–109.7
3.933
73.0
.092
26.6
.387
–83.9
7000.0000
.652
–116.3
3.760
66.1
.095
24.2
.372
–89.3
7500.0000
.626
–122.5
3.609
59.7
.098
21.2
.358
–95.0
8000.0000
.599
–128.1
3.480
53.6
.100
18.3
.344
–101.1
8500.0000
.579
–134.0
3.363
47.5
.103
16.3
.333
–107.9
9000.0000
.558
–139.9
3.250
41.7
.105
13.2
.322
–115.2
9500.0000
.542
–146.1
3.151
35.9
.108
10.8
.313
–123.4
10000.0000
.533
–152.1
3.068
30.5
.111
9.1
.311
–130.5
10500.0000
.523
–158.8
3.006
24.8
.114
6.7
.317
–136.6
11000.0000
.511
–164.7
2.942
18.6
.116
3.6
.330
–144.7
11500.0000
.497
–170.2
2.870
12.6
.119
.7
.338
–151.0
12000.0000
.483
–175.7
2.809
7.0
.119
–1.4
.344
–156.5
12500.0000
.466
179.0
2.742
.9
.123
–3.1
.350
–161.0
13000.0000
.444
173.7
2.678
–4.8
.124
–6.2
.356
–166.5
13500.0000
.424
167.8
2.633
–10.4
.129
–9.1
.358
–171.1
(deg.)
ANG.
MAG.
S22
MHz
(deg.)
ANG.
MAG.
(deg.)
ANG.
(deg.)
14000.0000
.406
162.0
2.562
–16.1
.130
–12.0
.363
–177.3
14500.0000
.397
155.4
2.537
–21.1
.134
–14.4
.375
177.6
15000.0000
.389
148.8
2.502
–26.7
.141
–17.9
.384
170.9
15500.0000
.391
141.2
2.479
–32.3
.140
–21.7
.408
164.3
16000.0000
.392
133.9
2.448
–38.0
.142
–24.6
.421
158.1
16500.0000
.390
127.2
2.426
–44.7
.145
–29.2
.437
153.6
17000.0000
.382
119.9
2.395
–51.3
.145
–32.6
.448
148.2
17500.0000
.367
113.0
2.330
–58.0
.149
–36.6
.462
144.1
18000.0000
.345
106.0
2.273
–64.6
.152
–42.1
.471
139.4
5
NE33284A
AMP. PARAMETERS
6
FREQUENCY
GUmax.
GAmax.
| S21 |2
| S12 |2
MHz
dB
dB
dB
dB
K
Delay
Mason’s U
G1
G2
nsec
dB
dB
dB
500.0000
24.43
14.39
–39.32
.89
.045
24.564
7.96
2.09
1000.0000
23.59
14.23
–33.35
.58
.045
23.761
7.35
2.01
1500.0000
23.98
14.33
–29.82
.38
.048
25.082
7.72
1.93
2000.0000
23.36
14.23
–27.79
.36
.042
25.247
7.35
1.78
2500.0000
23.08
14.19
–26.11
.33
.054
27.129
7.23
1.66
3000.0000
21.84
14.00
–24.62
.38
.053
27.788
6.33
1.50
3500.0000
20.54
13.74
–23.80
.44
.049
27.293
5.45
1.35
4000.0000
19.29
13.41
–22.92
.49
.043
26.733
4.67
1.21
4500.0000
18.25
13.13
–22.38
.54
.044
26.904
4.04
1.08
5000.0000
17.44
12.83
–21.74
.58
.042
28.524
3.65
.97
5500.0000
16.77
12.57
–21.26
.61
.042
31.604
3.33
.86
6000.0000
16.02
12.24
–20.86
.65
.042
35.307
3.00
.78
6500.0000
15.30
11.89
–20.75
.71
.039
30.255
2.70
.70
7000.0000
14.55
11.50
–20.46
.77
.039
29.316
2.40
.65
7500.0000
13.90
11.15
–20.18
.82
.035
26.733
2.16
.59
8000.0000
13.31
10.83
–20.01
.88
.034
24.067
1.93
.55
8500.0000
12.82
10.54
–19.73
.91
.034
24.242
1.77
.51
9000.0000
12.33
10.24
–19.59
.96
.033
22.480
1.62
.48
9500.0000
11.93
9.97
–19.36
.99
.032
22.389
1.51
.45
10000.0000
11.63
9.74
–19.09
.99
.030
23.563
1.45
.44
10500.0000
11.41
9.56
–18.85
.98
.032
25.469
1.39
.46
11000.0000
11.18
9.37
–18.73
.99
.035
26.884
1.31
.50
11500.0000
10.91
9.16
–18.49
1.00
.033
27.948
1.23
.53
12000.0000
10.67
12.82
8.97
–18.47
1.02
.031
25.233
1.16
.55
12500.0000
10.39
12.32
8.76
–18.24
1.04
.034
24.117
1.06
.57
13000.0000
10.10
11.73
8.56
–18.11
1.07
.032
21.495
.96
.59
13500.0000
9.87
11.41
8.41
–17.79
1.08
.031
20.813
.86
.60
14000.0000
9.57
10.92
8.17
–17.71
1.11
.032
18.944
.78
.61
14500.0000
9.49
10.95
8.09
–17.48
1.09
.028
19.425
.74
.66
15000.0000
9.37
11.06
7.96
–17.04
1.06
.031
20.693
.71
.69
15500.0000
9.40
11.35
7.89
–17.11
1.03
.031
21.818
.72
.79
16000.0000
9.35
11.77
7.78
–16.94
1.01
.032
23.233
.73
.85
16500.0000
9.34
7.70
–16.77
.98
.037
26.251
.72
.92
17000.0000
9.25
7.59
–16.77
.99
.036
22.793
.69
.98
17500.0000
9.01
7.35
–16.53
.99
.037
20.955
.63
1.04
18000.0000
8.77
7.13
–16.37
1.00
.037
19.097
.55
1.09
11.32
NE33284A
Noise Parameters
<Γ
Γopt. vs. frequency>
<TYPICAL CONSTANT NOISE FIGURE CIRCLE>
1.0
1.0
2.0
0.5
2.0
0.5
VDS = 2 V
ID = 10 mA
Γopt.
∗
VDS = 2 V
ID = 10 mA
6
8
4
10
2
1 dB
0
∞
1.0
12
0
1.0
∞
14
1.5 dB
16
2 dB
–0.5
18
–0.5
–2.0
–2.0
–1.0
–1.0
f = 4 HGz
START 2 GHz, STOP 18 GHz, STEP 2 GHz
<Noise Parameters>
VDS = 2 V, ID = 10 mA
Γopt.
Freq (GHz)
NFmin (dB)
Ga(dB)
2.0
0.32
16.0
0.76
18
0.23
4.0
0.35
15.0
0.69
49
0.19
6.0
0.41
13.7
0.63
79
0.14
8.0
0.50
12.6
0.58
110
0.08
10.0
0.62
11.5
0.53
140
0.05
12.0
0.75
10.5
0.49
171
0.03
14.0
0.88
9.6
0.46
–158
0.07
16.0
1.02
8.8
0.43
–127
0.09
18.0
1.15
8.0
0.41
–97
0.16
Mag.
Ang. (deg.)
Rn/50
7
NE33284A
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done under
different conditions.
<TYPES OF SURFACE MOUNT DEVICE>
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL” (IEI1207)
[NE33284A]
Soldering process
Soldering conditions
Infrared ray reflow
Peak package’s surface temperature: 230 ˚C or below, Reflow
time: 30 seconds or below (210 ˚C or higher), Number of reflow
process: 1, Exposure limit*: None
Partial heating method
Terminal temperature: 230 ˚C or below, Flow time: 10 seconds or
below, Exposure limit*: None
*:
Symbol
IR30-00
Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25 ˚C and relative humidity at 65 % or less.
Note: Do not apply more than a single process at once, except for “Partial heating method”.
PRECAUTION: Avoid high static voltage and electric fields, because this device is Hetero Junction field effect
transistor with shottky barrier gate.
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the Japanese law concerned and so on, especially in case of removal.
8
NE33284A
[MEMO]
9
NE33284A
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
2