SEMICONDUCTOR 2N7002KDU TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES B B1 ・ESD Protected 2000V. ・High density cell design for low RDS(ON). 1 6 2 5 3 4 DIM A A1 B A C ・Rugged and reliable. A1 C ・Voltage controlled small signal switch. ・High saturation current capablity. D B1 C H MAXIMUM RATING (Ta=25℃) 0.65 H 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + T 0.15+0.1/-0.05 D G T MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 + G CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous ID 300 Pulsed (Note 1) IDP 1200 Drain Power Dissipation (Note 2) PD 270 mW Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55～150 ℃ Thermal Resistance, Junction to Ambient (Note 2) RthJA 460 ℃/W Drain Current 1. 2. 3. 4. 5. 6. Q1 Q1 Q2 Q2 Q2 Q1 SOURCE GATE DRAIN SOURCE GATE DRAIN mA US6 Note 1) Pulse Width≦10㎲, Duty Cycle≦1% Note 2) Surface Mounted on 2 ×2 FR4 Board Marking EQUIVALENT CIRCUIT 6 5 4 6 5 4 Lot No. Type Name DU 1 1 2013. 7. 19 2 2 3 3 Revision No : 1 1/4 2N7002KDU ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT. Static Note 3) Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10μA 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V - - 1 μA Gate-Body Leakage, Forward IGSSF VGS=20V, VDS=0V - - 10 μA Gate-Body Leakage, Reverse IGSSR VGS=-20V, VDS=0V - - -10 μA Vth VDS=VGS, ID=250μA 1.0 - 2.0 V VGS=10V, ID=300mA - 1.2 1.5 VGS=4.5V, ID=250mA - 1.45 1.9 250 - - mS - 0.9 1.2 V - 20 - - 4 - - 8 - - 9 - - 43 - Gate Threshold Voltage Ω RDS(ON) Drain-Source ON Resistance Forward Transconductance gFS VDS=10V, ID=300mA Drain-Source Diode Forward Voltage VSD VGS=0V, IS=300mA Dynamic Note 3) Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss VDS=25V, VGS=0V, f=1MHz ton Turn-On Time VDD=30V, ID=300mA, VGS=10V Switching Time ns toff Turn-Off Time pF Note 3) Pulse Test : Pulse Width≦80㎲, Duty Cycle≦1% SWITCHING TIME TEST CIRCUIT ton td(on) VDD td(off) tr 90% toff tf 90% RL VIN VOUT D OUTPUT VOUT 10% VGS INVERTED G 90% 50% 50% S INPUT VIN 10% PULSE WIDTH 2013. 7. 19 Revision No : 1 2/4 2N7002KDU Fig 1. ID - VDS 6.0 COMMON SOURCE Ta = 25 C COMMON SOURCE Ta = 25 C 5V 7V 10V 1.2 6V ON - RESISTANCE RDS ( ) DRAIN CURRENT ID (A) 1.5 Fig 2. RDS(ON) - ID 4V 0.9 0.6 VGS = 3V 0.3 5.0 4.0 VGS = 3V 3.0 2.0 4V 1.0 5V 6V 7V 10V 0.0 0.0 1.0 2.0 3.0 4.0 0.0 0.1 5.0 0.2 DRAIN-SOURCE VOLTAGE VDS (V) 0.3 NORMALIZED GATE SOURCE THRESHOLDVOLTAGE Vth (V) NORMALIZED ON - RESISTANCE RDS ( ) 1.4 2.5 2.0 1.5 1.0 VGS=10V 0.0 -100 -50 0 50 100 Common Source VGS=VDS ID=250 µA 1.2 1.0 0.8 0.6 0.4 -100 150 JUNCTION TEMPERATURE Tj ( C) -50 REVERSE DRAIN CURRENT I S (A) DRAIN CURRENT ID (A) VDS =10V 0.8 0.6 0.4 125 C 0.2 25 C 0.0 2 3 4 DRAIN-SOURCE VOLTAGE VGS (V) Revision No : 1 50 100 150 Fig 6. I S - VSD 1.0 1 0 JUNCTION TEMPERATURE Tj ( C) Fig 5. ID - VGS 0 0.6 Fig 4. Vth - Tj 3.0 0.5 0.5 DRAIN-CURRENT ID (A) Fig 3. RDS(ON) - Tj 2013. 7. 19 0.4 5 1 125 C 25 C 0.1 0.01 0.0 0.5 1.0 1.5 2.0 BODY DIODE FORWARD VOLTAGE VSD (V) 3/4 2N7002KDU Fig 7. C - VDS C iss COMMON SOURCE VGS =0V f=1MHz Ta=25 C C oss 10 C rss 1 0 5 10 15 20 25 30 DRAIN CURRENT I D (A) 100 CAPACITANCE C (pF) Fig 8. Safe Operation Area 101 100 10ט 100ט 10-1 1ms 10ms Operation in this area is limited by RDS(ON) 10-2 Tc= 25 C Tj = 150 C Single nonrepetitive pulse 10-3 10-1 100 DC 101 102 DRAIN-SOURCE VOLTAGE V DS (V) DRAIN-SOURCE VOLTAGE V DS (V) DRAIN POWER DISSIPATION P D (mW) Fig 9. PD - Ta 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 2013. 7. 19 Revision No : 1 4/4