2N7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60 Vdc Drain−Gate Voltage (RGS = 1.0 M) VDGR 60 Vdc ID ID mAdc IDM ± 115 ± 75 ± 800 VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current − Continuous TC = 25°C (Note 1) − Continuous TC = 100°C (Note 1) − Pulsed (Note 2) Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 s) V(BR)DSS RDS(on) MAX ID MAX 60 V 7.5 @ 10 V, 500 mA 115 mA N−Channel 3 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 2 MARKING DIAGRAM & PIN ASSIGNMENT THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 3) TA = 25°C Derate above 25°C Symbol Max Unit PD 225 1.8 mW mW/°C Drain 3 1 2 Thermal Resistance, Junction to Ambient RJA 556 °C/W Total Device Dissipation Alumina Substrate,(Note 4) TA = 25°C Derate above 25°C PD 300 mW mW/°C Thermal Resistance, Junction to Ambient RJA 417 °C/W TJ, Tstg − 55 to +150 °C Junction and Storage Temperature 3 SOT−23 CASE 318 STYLE 21 2.4 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. 3. FR−5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. 702 W 702 W 1 2 Gate Source = Device Code = Work Week ORDERING INFORMATION Device 2N7002LT1 Package SOT−23 2N7002LT3 2N7002LT1G 2N7002LT3G Shipping† 3000 Tape & Reel 10,000 Tape & Reel SOT−23 (Pb−free) 3000 Tape & Reel 10,000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2004 July, 2004 − Rev. 2 1 Publication Order Number: 2N7002L/D 2N7002L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 60 − − Vdc IDSS − − − − 1.0 500 Adc Gate−Body Leakage Current, Forward (VGS = 20 Vdc) IGSSF − − 100 nAdc Gate−Body Leakage Current, Reverse (VGS = − 20 Vdc) IGSSR − − −100 nAdc VGS(th) 1.0 − 2.5 Vdc On−State Drain Current (VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) ID(on) 500 − − mA Static Drain−Source On−State Voltage (VGS = 10 Vdc, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) VDS(on) − − − − 3.75 0.375 − − − − − − − − 7.5 13.5 7.5 13.5 gFS 80 − − mmhos Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss − − 50 pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss − − 25 pF Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss − − 5.0 pF td(on) − − 20 ns td(off) − − 40 ns VSD − − −1.5 Vdc IS − − −115 mAdc ISM − − −800 mAdc Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0, ID = 10 Adc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) TJ = 25°C TJ = 125°C ON CHARACTERISTICS (Note 5) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static Drain−Source On−State Resistance (VGS = 10 V, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) Vdc rDS(on) TC = 25°C TC = 125°C TC = 25°C TC = 125°C Forward Transconductance (VDS ≥ 2.0 VDS(on), ID = 200 mAdc) Ohms DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Turn−Off Delay Time (VDD = 25 Vdc, ID 500 mAdc, RG = 25 , RL = 50 , Vgen = 10 V) BODY−DRAIN DIODE RATINGS Diode Forward On−Voltage (IS = 11.5 mAdc, VGS = 0 V) Source Current Continuous (Body Diode) Source Current Pulsed 5. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. http://onsemi.com 2 2N7002L TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.0 VDS = 10 V TA = 25°C 1.6 VGS = 10 V 1.4 9V 1.2 8V 1.0 7V 0.8 6V 0.6 0.4 5V 0.2 4V 3V 0 I D, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) 1.8 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 9.0 0.8 0.6 0.4 0.2 10 0 VGS(th) , THRESHOLD VOLTAGE (NORMALIZED) r DS(on) , STATIC DRAIN−SOURCE ON−RESISTANCE (NORMALIZED) 2.2 VGS = 10 V ID = 200 mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 −60 −20 +20 +60 T, TEMPERATURE (°C) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 Figure 2. Transfer Characteristics 2.4 1.8 25°C 125°C Figure 1. Ohmic Region 2.0 −55 °C +100 +140 1.2 1.05 VDS = VGS ID = 1.0 mA 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 −60 Figure 3. Temperature versus Static Drain−Source On−Resistance −20 +20 +60 T, TEMPERATURE (°C) +100 Figure 4. Temperature versus Gate Threshold Voltage http://onsemi.com 3 +140 2N7002L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AH A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−03 AND −07 OBSOLETE, NEW STANDARD 318−08. 3 1 V B S 2 DIM A B C D G H J K L S V G C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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