NJRC NJG1134HA8

NJG1134HA8
UHF BAND LOW NOISE AMPLIFIER GaAs MMIC
Q GENERAL DESCRIPTION
NJG1134HA8 is a low noise amplifier GaAs MMIC designed
for mobile digital TV application (470~770 MHz).
This IC has a LNA pass-through function to select high gain
mode or low gain mode by single bit control.
Also, this IC is integrated the ESD protection circuit.
An ultra-small and ultra-thin package of USB6-A8 is adopted.
Q FEATURES
O Low voltage operation
O Low voltage control
O Package
[High gain mode]
O Low current consumption
O Gain
O Low noise figure
O High input IP3
[Low gain mode]
O Low current consumption
O Gain
O High input IP3
Q PACKAGE OUTLINE
NJG1134HA8
+2.8V typ.
+1.8V typ.
USB6-A8 (Package size: 1mm x 1.2mm x 0.38mm typ.)
4.0mA typ.
10.0dB typ.
1.2dB typ.@ fRF=470~620MHz
+5.0dBm typ.
10µA typ.
-0.6dB typ.
+23.0dBm typ.
Q PIN CONFIGURATION
(Top View)
6
1
5
1 Pin INDEX
Bias
Circuit
Logic
Circuit
Pin Connection
1. RFIN1
2. RFOUT1
3. RFIN2
4. RFOUT2
5. VCTL
2
4
6. GND
3
Q TRUTH TABLE
“H”=VCTL(H), “L”=VCTL(L)
VCTL
LNA Mode
H
High Gain mode
L
Low Gain mode
Note: Specifications and description listed in this datasheet are subject to change without notice.
Ver.2008-02-29
-1-
NJG1134HA8
Q ABSOLUTE MAXIMUM RATINGS
Ta=+25°C, Zs=Zl=50 ohm
PARAMETER
SYMBOL
CONDITIONS
RATINGS
UNITS
Drain voltage
VDD
5.0
V
Control voltage
VCTL
5.0
V
Input power
PIN
VDD=2.8V
+15
dBm
Power dissipation
PD
On PCB board, Tjmax=150°C
150
mW
Operating temperature
Topr
-40~+95
°C
Storage temperature
Tstg
-55~+150
°C
Q ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS)
General conditions: VDD=2.8V, Ta=+25°C, Zs=Zl=50 ohm, with application circuit.
PARAMETERS
Operating voltage
SYMBOL
CONDITIONS
VDD
MIN
TYP
MAX
UNITS
2.3
2.8
3.6
V
Control voltage (High)
VCTL(H)
High Gain mode
1.3
1.8
3.6
V
Control voltage (Low)
VCTL(L)
Low Gain mode
0
0
0.5
V
Operating current1
IDD1
RF OFF, VCTL=1.8V
-
4.0
5.6
mA
Operating current2
IDD2
RF OFF, VCTL=0.0V
-
10.0
25.0
µA
Control current
ICTL
RF OFF, VCTL=1.8V
-
6.0
10.0
µA
-2-
NJG1134HA8
Q ELECTRICAL CHARACTERISTICS2 (High Gain mode)
General conditions: VDD= 2.8V, VCTL=1.8V, Ta=+25°C, Zs=Zl=50 ohm, with application circuit.
PARAMETERS
MIN
TYP
MAX
UNITS
fRF
470
620
770
MHz
Gain1
9.0
10.0
12.5
dB
Gain flatness
Gflat
-
1.1
1.6
dB
Noise figure1
NF1
Exclude PCB & connector
losses, fRF=470~620MHz*1
-
1.20
1.45
dB
Noise figure2
NF2
Exclude PCB & connector
losses, fRF=620~710MHz*1
-
1.25
1.50
dB
Noise figure3
NF3
Exclude PCB & connector
losses, fRF=710~770MHz*1
-
1.30
1.55
dB
-9.0
-5.0
-
dBm
+0.0
+5.0
-
dBm
Operating frequency
Small signal gain1
Input power at 1dB gain
compression point1
SYMBOL
CONDITIONS
P-1dB(IN)1
Input 3rd order
intercept point1
IIP3_1
f1=fRF, f2=fRF+100kHz,
PIN=-28dBm
RF IN VSWR1
VSWRi1
-
2.7
3.3
RF OUT VSWR1
VSWRo1
-
3.0
3.8
Q ELECTRICAL CHARACTERISTICS3 (Low Gain mode)
General conditions: VDD= 2.8V, VCTL=0V, Ta=+25°C, Zs=Zl=50 ohm, with application circuit.
PARAMETERS
Operating frequency
Small signal gain2
Input power at 1dB gain
compression point2
SYMBOL
CONDITIONS
fRF
Gain2
Exclude PCB & connector
losses*2
P-1dB(IN)2
f1=fRF, f2=fRF+100kHz,
PIN=-15dBm
MIN
TYP
MAX
UNITS
470
620
770
MHz
-1.8
-0.6
-
dB
-3.0
+4.0
-
dBm
+10.0
+23.0
-
dBm
Input 3rd order
intercept point2
IIP3_2
RF IN VSWR2
VSWRi2
-
1.2
1.5
RF OUT VSWR2
VSWRo2
-
1.2
1.5
*1 Input PCB and connector losses: 0.036dB(at 470MHz), 0.053dB(at 770MHz)
*2 Input-output PCB and connector losses: 0.072dB(at 470MHz), 0.105dB(at 770MHz)
-3-
NJG1134HA8
QTERMINAL INFORMATION
No.
SYMBOL
DESCRIPTION
1
RFIN1
RF input terminal. The RF signal is input through the external matching circuit.
This terminal is connected with the ground through L1 shown in the application
circuit.
At the High gain mode, RF signal comes out from this terminal, and is input into
RFIN2 terminal through L2.
Please supply power through L3 shown in the application circuit since this
terminal also function supply voltage terminal.
At the High gain mode, RF signal comes out from RFOUT1 terminal, and is
input into this terminal.
Please connect this terminal with RFOUT1 terminal through L2 shown in the
application circuit.
2
RFOUT1
3
RFIN2
4
RFOUT2
5
VCTL
Control voltage supply terminal.
6
GND
Ground terminal.
RF output terminal. External capacitor C3 is required to block the DC bias
voltage of internal circuit.
* RF signal input terminal is RFIN1, and the RF signal output terminal is RFOUT2.
-4-
NJG1134HA8
Q ELECTRICAL CHARACTERISTICS (High Gain mode)
Conditions: Ta=+25°C, VDD=2.8V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit.
Pout vs. Pin
Gain, IDD vs. Pin
(f=620MHz)
(f=620MHz)
10
12
5
8
11
0
7
Gain
10
6
9
5
-10
Pout
-15
-20
-25
8
7
3
6
2
5
-30
1
P-1dB(IN)=-2.6dBm
P-1dB(IN)=-2.6dBm
4
-35
-30
-25
-20
-15
-10
-5
0
0
-40
-35
-30
-25
Pin (dBm)
Pout, IM3 vs. Pin
-10
-5
0
Gain, NF vs. Frequency
20
12
11
0
Pout
Gain (dB)
Pout, IM3 (dBm)
-15
Pin (dBm)
(f1=620MHz, f2=620.1MHz)
-20
-20
-40
-60
4
3.5
Gain
10
3
9
2.5
8
2
7
1.5
NF
6
NF (dB)
-35
-40
4
IDD
IDD (mA)
Gain (dB)
Pout (dBm)
-5
1
-80
-100
-40
-30
5
IIP3=+7.2dBm
IM3
-20
-10
0
0.5
(Exclude PCB, Connector Losses)
4
10
0
400
450
500
550
600
650
700
750
800
Frequency (MHz)
Pin (dBm)
IIP3, OIP3 vs. Frequency
P-1dB(IN) vs. Frequency
(f1=frequency, f2=f1+100kHz, Pin=-28dBm)
5
20
OIP3
15
IIP3, OIP3 (dBm)
P-1dB(IN) (dBm)
0
P-1dB(IN)
-5
IIP3
5
-10
-15
400
10
450
500
550
600
650
Frequency (MHz)
700
750
800
0
400
450
500
550
600
650
700
750
800
Frequency (MHz)
-5-
NJG1134HA8
Q ELECTRICAL CHARACTERISTICS (High Gain mode)
Conditions: Ta=+25°C, VDD=2.8V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit.
IDD, Gain, NF vs. VDD
K-factor vs. Frequency
(f=620MHz)
20
6
12
10
5
Gain
10
8
4
6
3
IDD
2
4
5
NF
1
2
0
0
0
0
5000
10000
15000
20000
0
1
2
3
4
5
VDD (V)
Frequency (MHz)
P-1dB(IN) vs. VDD
IIP3, OIP3 vs. VDD
(f=620MHz)
(f1=620MHz, f2=620.1MHz, Pin=-28dBm)
5
25
20
IIP3, OIP3 (dBm)
P-1dB(IN) (dBm)
0
P-1dB(IN)
-5
15
OIP3
10
5
-10
0
IIP3
-5
-15
0
1
2
3
4
0
5
1
2
VDD (V)
3
4
5
VDD (V)
IDD vs. VCTL
VSWR vs. VDD
5
8
4
6
5
IDD (mA)
VSWRi(max.), VSWRo(max)
7
4
VSWRo(max.)
3
2
2
1
VSWRi(max.)
1
0
0
1
2
3
VDD (V)
-6-
3
4
5
0
0
0.5
1
VCTL (V)
1.5
2
NF (dB)
IDD (mA), Gain (dB)
K-factor
15
NJG1134HA8
Q ELECTRICAL CHARACTERISTICS (High Gain mode)
Conditions: VDD=2.8V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit.
P-1dB(IN) vs. Temp.
Gain, NF vs. Temp.
(fRF=620MHz)
(fRF=620MHz)
Gain
3.5
9
2.5
8
2
1.5
7
NF
6
1
5
0.5
4
-50
P-1dB(IN) (dBm)
Gain (dB)
0
3
10
NF (dB)
11
5
4
12
P-1dB(IN)
-5
-10
0
100
-15
-50
Temperature ( C)
0
50
o
Temperature ( C)
IIP3, OIP3 vs. Temp.
IDD vs. Temp.
0
50
o
100
(RF OFF)
(f1=620MHz, f2=620.1MHz, Pin=-28dBm)
7
25
6
20
5
15
IDD (mA)
IIP3, OIP3 (dBm)
OIP3
10
IIP3
4
IDD
3
2
5
1
0
-50
0
50
0
-50
100
0
50
100
o
o
Temperature ( C)
Temperature ( C)
VSWR vs. Temp.
IDD vs. VCTL
(fRF=470~770MHz)
8
5
4
6
5
4
IDD (mA)
VSWRi(max.), VSWRo(max.)
7
VSWRo(max.)
3
3
o
95 C
o
o
0 C
75 C
2
o
o
50 C
2
-25 C
o
VSWRi(max.)
25 C
o
-40 C
1
1
0
-50
0
0
50
o
Temperature ( C)
100
0
0.5
1
1.5
2
VCTL (V)
-7-
NJG1134HA8
Q ELECTRICAL CHARACTERISTICS (High Gain mode)
Conditions: Ta=+25°C, VDD=2.8V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit.
-8-
S11, S22
S21, S12
VSWR
Zin, Zout
S11, S22 (50MHz~20GHz)
S21, S12 (50MHz~20GHz)
NJG1134HA8
Q ELECTRICAL CHARACTERISTICS (Low Gain mode)
Conditions: Ta=+25°C, VDD=2.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit.
Pout vs. Pin
Gain, IDD vs. Pin
(f=620MHz)
(f=620MHz)
10
0
3
5
-0.5
0
2.5
Gain
-1
-15
Pout
-20
-1.5
IDD
1.5
-2
-25
-30
1
-2.5
-35
-40
-40
2
0.5
P-1dB(IN)=+3.5dBm
P-1dB(IN)=+3.5dBm
-3
-30
-20
-10
IDD (mA)
-10
Gain (dB)
Pout (dBm)
-5
0
10
20
0
-40
-30
-20
-10
Pin (dBm)
0
10
20
Pin (dBm)
Pout, IM3 vs. Pin
Gain vs. Frequency
(f1=620MHz, f2=620.1MHz)
20
0
0
-20
Pout
Gain (dB)
Pout, IM3 (dBm)
-0.2
-40
-0.4
-0.6
Gain
-60
IM3
-0.8
-80
IIP3=+23.0dBm
-100
-40
-30
-20
-10
0
10
20
(Exclude PCB, Connector Losses)
-1
400
30
450
500
550
600
650
700
750
800
Frequency (MHz)
Pin (dBm)
IIP3, OIP3 vs. Frequency
P-1dB(IN) vs. Frequency
(f1=frequency , f2=f1+100kHz, Pin=-15dBm)
15
28
10
IIP3, OIP3 (dBm)
P-1dB(IN) (dBm)
26
5
IIP3
24
OIP3
22
P-1dB(IN)
20
0
400
450
500
550
600
650
Frequency (MHz)
700
750
800
18
400
450
500
550
600
650
700
750
800
Frequency (MHz)
-9-
NJG1134HA8
Q ELECTRICAL CHARACTERISTICS (Low Gain mode)
Conditions: Ta=+25°C, VDD=2.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit.
K-factor vs. Frequency
20
K-factor
15
10
5
0
0
5000
10000
Frequency (MHz)
- 10 -
15000
20000
NJG1134HA8
Q ELECTRICAL CHARACTERISTICS (Low Gain mode)
Conditions: VDD=2.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit.
P-1dB(IN) vs. Temp.
Gain vs. Temp.
(fRF=620MHz)
(fRF=620MHz)
15
0
Gain
10
P-1dB(IN) (dBm)
-0.5
Gain (dB)
-1
-1.5
-2
P-1dB(IN)
5
0
-2.5
-3
-50
0
50
-5
-50
100
0
50
o
Temperature ( C)
o
Temperature ( C)
100
IDD vs. Temp.
IIP3, OIP3 vs. Temp.
(RF OFF)
(f1=620MHz, f2=620.1MHz, Pin=-15dBm)
20
30
IIP3
25
15
IDD (µA)
IIP3, OIP3 (dBm)
OIP3
20
15
10
IDD
10
5
5
0
-50
0
50
100
o
0
-50
0
50
100
o
Temperature ( C)
Temperature ( C)
VSWR vs. Temp.
(fRF=470~770MHz)
VSWRi(max.), VSWRo(max.)
3
2.5
2
1.5
VSWRo(max.)
1
VSWRi(max.)
0.5
0
-50
0
50
100
o
Temperature ( C)
- 11 -
NJG1134HA8
Q ELECTRICAL CHARACTERISTICS (Low Gain mode)
Conditions: Ta=+25°C, VDD=2.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit.
- 12 -
S11, S22
S21, S12
VSWR
Zin, Zout
S11, S22 (50MHz~20GHz)
S21, S12 (50MHz~20GHz)
NJG1134HA8
Q APPLICATION CIRCUIT
C1
RF IN 68pF
RFIN1
GND
VCTL
6
1
VCTL=1.8V or 0.0V
5
L1
33nH
Logic
Circuit
Bias
Circuit
C3
68pF
2
L2
68nH
RFOUT1
4
RFIN2
3
RFOUT2
RF OUT
VDD=2.8V
C2
1000pF
L3
33nH
Q TEST PCB LAYOUT
VCTL
Parts List
RF IN
C1
Parts ID
L1
Notes
RF OUT
L1, L3
C3
L2
L2 L3 C2
C1~C3
VDD
MURATA
(LQP03T series)
TAIYO-YUDEN
(HK0603 series)
MURATA
(GRM03 series)
PCB (FR-4):
t=0.2mm
MICROSTRIP LINE
WIDTH=0.4mm (Z0=50 ohm)
PCB SIZE=16.8mmx16.8mm
PRECAUTIONS
[1] C1 and C3 are DC-Blocking capacitors, and L1 is a DC-feed inductor.
[2] L2 and L3 formed the output matching circuit.
[3] C2 is a bypass capacitor.
[4] Ground terminals (6pin) should be connected with ground plane as close as possible in order to limit
ground path induction.
[5] All external parts are placed as close as possible to the IC.
- 13 -
NJG1134HA8
Q MEASUREMENT BLOCK DIAGRAM
VCTL=1.8V or 0.0V
VDD =2.8V
RF Input
DUT
RF Output
Network
Analyzer
S parameter Measurement Block Diagram
VCTL=1.8V
VDD =2.8V
RF Input
DUT
RF Output
Noise Source
NF
Analyzer
Noise Figure Measurement Block Diagram
freq.1
VCTL=1.8V or 0.0V
2dB
Attenuator
VDD =2.8V
Signal
Generator
RF Input
Signal
Generator
freq.2
DUT
Power
Comb.
2dB
Attenuator
Input IP3 Measurement Block Diagram
- 14 -
RF Output
Spectrum
Analyzer
NJG1134HA8
0.38±0.06
+0.012
0.038-0.009
QPACKAGE OUTLINE (USB6-A8)
0.03
0.2 (MIN0.15)
S
S
TERMINAL TREAT
Substrate
Molding material
UNIT
WEIGHT
:Au
:FR5
:Epoxy resin
:mm
:1.1mg
0.2±0.04
C0.1
6
R0.05
5
1
4
0.2±0.04
0.4
0.6
Photo resist coating
0.8
1.2±0.05
0.1±0.05
2
3
0.4
0.2±0.07
1.0±0.05
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this product, please obey the relating law of your country.
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle
with care to avoid these damages.
- 15 -