NJG1134HA8 UHF BAND LOW NOISE AMPLIFIER GaAs MMIC Q GENERAL DESCRIPTION NJG1134HA8 is a low noise amplifier GaAs MMIC designed for mobile digital TV application (470~770 MHz). This IC has a LNA pass-through function to select high gain mode or low gain mode by single bit control. Also, this IC is integrated the ESD protection circuit. An ultra-small and ultra-thin package of USB6-A8 is adopted. Q FEATURES O Low voltage operation O Low voltage control O Package [High gain mode] O Low current consumption O Gain O Low noise figure O High input IP3 [Low gain mode] O Low current consumption O Gain O High input IP3 Q PACKAGE OUTLINE NJG1134HA8 +2.8V typ. +1.8V typ. USB6-A8 (Package size: 1mm x 1.2mm x 0.38mm typ.) 4.0mA typ. 10.0dB typ. 1.2dB typ.@ fRF=470~620MHz +5.0dBm typ. 10µA typ. -0.6dB typ. +23.0dBm typ. Q PIN CONFIGURATION (Top View) 6 1 5 1 Pin INDEX Bias Circuit Logic Circuit Pin Connection 1. RFIN1 2. RFOUT1 3. RFIN2 4. RFOUT2 5. VCTL 2 4 6. GND 3 Q TRUTH TABLE “H”=VCTL(H), “L”=VCTL(L) VCTL LNA Mode H High Gain mode L Low Gain mode Note: Specifications and description listed in this datasheet are subject to change without notice. Ver.2008-02-29 -1- NJG1134HA8 Q ABSOLUTE MAXIMUM RATINGS Ta=+25°C, Zs=Zl=50 ohm PARAMETER SYMBOL CONDITIONS RATINGS UNITS Drain voltage VDD 5.0 V Control voltage VCTL 5.0 V Input power PIN VDD=2.8V +15 dBm Power dissipation PD On PCB board, Tjmax=150°C 150 mW Operating temperature Topr -40~+95 °C Storage temperature Tstg -55~+150 °C Q ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS) General conditions: VDD=2.8V, Ta=+25°C, Zs=Zl=50 ohm, with application circuit. PARAMETERS Operating voltage SYMBOL CONDITIONS VDD MIN TYP MAX UNITS 2.3 2.8 3.6 V Control voltage (High) VCTL(H) High Gain mode 1.3 1.8 3.6 V Control voltage (Low) VCTL(L) Low Gain mode 0 0 0.5 V Operating current1 IDD1 RF OFF, VCTL=1.8V - 4.0 5.6 mA Operating current2 IDD2 RF OFF, VCTL=0.0V - 10.0 25.0 µA Control current ICTL RF OFF, VCTL=1.8V - 6.0 10.0 µA -2- NJG1134HA8 Q ELECTRICAL CHARACTERISTICS2 (High Gain mode) General conditions: VDD= 2.8V, VCTL=1.8V, Ta=+25°C, Zs=Zl=50 ohm, with application circuit. PARAMETERS MIN TYP MAX UNITS fRF 470 620 770 MHz Gain1 9.0 10.0 12.5 dB Gain flatness Gflat - 1.1 1.6 dB Noise figure1 NF1 Exclude PCB & connector losses, fRF=470~620MHz*1 - 1.20 1.45 dB Noise figure2 NF2 Exclude PCB & connector losses, fRF=620~710MHz*1 - 1.25 1.50 dB Noise figure3 NF3 Exclude PCB & connector losses, fRF=710~770MHz*1 - 1.30 1.55 dB -9.0 -5.0 - dBm +0.0 +5.0 - dBm Operating frequency Small signal gain1 Input power at 1dB gain compression point1 SYMBOL CONDITIONS P-1dB(IN)1 Input 3rd order intercept point1 IIP3_1 f1=fRF, f2=fRF+100kHz, PIN=-28dBm RF IN VSWR1 VSWRi1 - 2.7 3.3 RF OUT VSWR1 VSWRo1 - 3.0 3.8 Q ELECTRICAL CHARACTERISTICS3 (Low Gain mode) General conditions: VDD= 2.8V, VCTL=0V, Ta=+25°C, Zs=Zl=50 ohm, with application circuit. PARAMETERS Operating frequency Small signal gain2 Input power at 1dB gain compression point2 SYMBOL CONDITIONS fRF Gain2 Exclude PCB & connector losses*2 P-1dB(IN)2 f1=fRF, f2=fRF+100kHz, PIN=-15dBm MIN TYP MAX UNITS 470 620 770 MHz -1.8 -0.6 - dB -3.0 +4.0 - dBm +10.0 +23.0 - dBm Input 3rd order intercept point2 IIP3_2 RF IN VSWR2 VSWRi2 - 1.2 1.5 RF OUT VSWR2 VSWRo2 - 1.2 1.5 *1 Input PCB and connector losses: 0.036dB(at 470MHz), 0.053dB(at 770MHz) *2 Input-output PCB and connector losses: 0.072dB(at 470MHz), 0.105dB(at 770MHz) -3- NJG1134HA8 QTERMINAL INFORMATION No. SYMBOL DESCRIPTION 1 RFIN1 RF input terminal. The RF signal is input through the external matching circuit. This terminal is connected with the ground through L1 shown in the application circuit. At the High gain mode, RF signal comes out from this terminal, and is input into RFIN2 terminal through L2. Please supply power through L3 shown in the application circuit since this terminal also function supply voltage terminal. At the High gain mode, RF signal comes out from RFOUT1 terminal, and is input into this terminal. Please connect this terminal with RFOUT1 terminal through L2 shown in the application circuit. 2 RFOUT1 3 RFIN2 4 RFOUT2 5 VCTL Control voltage supply terminal. 6 GND Ground terminal. RF output terminal. External capacitor C3 is required to block the DC bias voltage of internal circuit. * RF signal input terminal is RFIN1, and the RF signal output terminal is RFOUT2. -4- NJG1134HA8 Q ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: Ta=+25°C, VDD=2.8V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit. Pout vs. Pin Gain, IDD vs. Pin (f=620MHz) (f=620MHz) 10 12 5 8 11 0 7 Gain 10 6 9 5 -10 Pout -15 -20 -25 8 7 3 6 2 5 -30 1 P-1dB(IN)=-2.6dBm P-1dB(IN)=-2.6dBm 4 -35 -30 -25 -20 -15 -10 -5 0 0 -40 -35 -30 -25 Pin (dBm) Pout, IM3 vs. Pin -10 -5 0 Gain, NF vs. Frequency 20 12 11 0 Pout Gain (dB) Pout, IM3 (dBm) -15 Pin (dBm) (f1=620MHz, f2=620.1MHz) -20 -20 -40 -60 4 3.5 Gain 10 3 9 2.5 8 2 7 1.5 NF 6 NF (dB) -35 -40 4 IDD IDD (mA) Gain (dB) Pout (dBm) -5 1 -80 -100 -40 -30 5 IIP3=+7.2dBm IM3 -20 -10 0 0.5 (Exclude PCB, Connector Losses) 4 10 0 400 450 500 550 600 650 700 750 800 Frequency (MHz) Pin (dBm) IIP3, OIP3 vs. Frequency P-1dB(IN) vs. Frequency (f1=frequency, f2=f1+100kHz, Pin=-28dBm) 5 20 OIP3 15 IIP3, OIP3 (dBm) P-1dB(IN) (dBm) 0 P-1dB(IN) -5 IIP3 5 -10 -15 400 10 450 500 550 600 650 Frequency (MHz) 700 750 800 0 400 450 500 550 600 650 700 750 800 Frequency (MHz) -5- NJG1134HA8 Q ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: Ta=+25°C, VDD=2.8V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit. IDD, Gain, NF vs. VDD K-factor vs. Frequency (f=620MHz) 20 6 12 10 5 Gain 10 8 4 6 3 IDD 2 4 5 NF 1 2 0 0 0 0 5000 10000 15000 20000 0 1 2 3 4 5 VDD (V) Frequency (MHz) P-1dB(IN) vs. VDD IIP3, OIP3 vs. VDD (f=620MHz) (f1=620MHz, f2=620.1MHz, Pin=-28dBm) 5 25 20 IIP3, OIP3 (dBm) P-1dB(IN) (dBm) 0 P-1dB(IN) -5 15 OIP3 10 5 -10 0 IIP3 -5 -15 0 1 2 3 4 0 5 1 2 VDD (V) 3 4 5 VDD (V) IDD vs. VCTL VSWR vs. VDD 5 8 4 6 5 IDD (mA) VSWRi(max.), VSWRo(max) 7 4 VSWRo(max.) 3 2 2 1 VSWRi(max.) 1 0 0 1 2 3 VDD (V) -6- 3 4 5 0 0 0.5 1 VCTL (V) 1.5 2 NF (dB) IDD (mA), Gain (dB) K-factor 15 NJG1134HA8 Q ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VDD=2.8V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit. P-1dB(IN) vs. Temp. Gain, NF vs. Temp. (fRF=620MHz) (fRF=620MHz) Gain 3.5 9 2.5 8 2 1.5 7 NF 6 1 5 0.5 4 -50 P-1dB(IN) (dBm) Gain (dB) 0 3 10 NF (dB) 11 5 4 12 P-1dB(IN) -5 -10 0 100 -15 -50 Temperature ( C) 0 50 o Temperature ( C) IIP3, OIP3 vs. Temp. IDD vs. Temp. 0 50 o 100 (RF OFF) (f1=620MHz, f2=620.1MHz, Pin=-28dBm) 7 25 6 20 5 15 IDD (mA) IIP3, OIP3 (dBm) OIP3 10 IIP3 4 IDD 3 2 5 1 0 -50 0 50 0 -50 100 0 50 100 o o Temperature ( C) Temperature ( C) VSWR vs. Temp. IDD vs. VCTL (fRF=470~770MHz) 8 5 4 6 5 4 IDD (mA) VSWRi(max.), VSWRo(max.) 7 VSWRo(max.) 3 3 o 95 C o o 0 C 75 C 2 o o 50 C 2 -25 C o VSWRi(max.) 25 C o -40 C 1 1 0 -50 0 0 50 o Temperature ( C) 100 0 0.5 1 1.5 2 VCTL (V) -7- NJG1134HA8 Q ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: Ta=+25°C, VDD=2.8V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit. -8- S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (50MHz~20GHz) S21, S12 (50MHz~20GHz) NJG1134HA8 Q ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: Ta=+25°C, VDD=2.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit. Pout vs. Pin Gain, IDD vs. Pin (f=620MHz) (f=620MHz) 10 0 3 5 -0.5 0 2.5 Gain -1 -15 Pout -20 -1.5 IDD 1.5 -2 -25 -30 1 -2.5 -35 -40 -40 2 0.5 P-1dB(IN)=+3.5dBm P-1dB(IN)=+3.5dBm -3 -30 -20 -10 IDD (mA) -10 Gain (dB) Pout (dBm) -5 0 10 20 0 -40 -30 -20 -10 Pin (dBm) 0 10 20 Pin (dBm) Pout, IM3 vs. Pin Gain vs. Frequency (f1=620MHz, f2=620.1MHz) 20 0 0 -20 Pout Gain (dB) Pout, IM3 (dBm) -0.2 -40 -0.4 -0.6 Gain -60 IM3 -0.8 -80 IIP3=+23.0dBm -100 -40 -30 -20 -10 0 10 20 (Exclude PCB, Connector Losses) -1 400 30 450 500 550 600 650 700 750 800 Frequency (MHz) Pin (dBm) IIP3, OIP3 vs. Frequency P-1dB(IN) vs. Frequency (f1=frequency , f2=f1+100kHz, Pin=-15dBm) 15 28 10 IIP3, OIP3 (dBm) P-1dB(IN) (dBm) 26 5 IIP3 24 OIP3 22 P-1dB(IN) 20 0 400 450 500 550 600 650 Frequency (MHz) 700 750 800 18 400 450 500 550 600 650 700 750 800 Frequency (MHz) -9- NJG1134HA8 Q ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: Ta=+25°C, VDD=2.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit. K-factor vs. Frequency 20 K-factor 15 10 5 0 0 5000 10000 Frequency (MHz) - 10 - 15000 20000 NJG1134HA8 Q ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VDD=2.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit. P-1dB(IN) vs. Temp. Gain vs. Temp. (fRF=620MHz) (fRF=620MHz) 15 0 Gain 10 P-1dB(IN) (dBm) -0.5 Gain (dB) -1 -1.5 -2 P-1dB(IN) 5 0 -2.5 -3 -50 0 50 -5 -50 100 0 50 o Temperature ( C) o Temperature ( C) 100 IDD vs. Temp. IIP3, OIP3 vs. Temp. (RF OFF) (f1=620MHz, f2=620.1MHz, Pin=-15dBm) 20 30 IIP3 25 15 IDD (µA) IIP3, OIP3 (dBm) OIP3 20 15 10 IDD 10 5 5 0 -50 0 50 100 o 0 -50 0 50 100 o Temperature ( C) Temperature ( C) VSWR vs. Temp. (fRF=470~770MHz) VSWRi(max.), VSWRo(max.) 3 2.5 2 1.5 VSWRo(max.) 1 VSWRi(max.) 0.5 0 -50 0 50 100 o Temperature ( C) - 11 - NJG1134HA8 Q ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: Ta=+25°C, VDD=2.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit. - 12 - S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (50MHz~20GHz) S21, S12 (50MHz~20GHz) NJG1134HA8 Q APPLICATION CIRCUIT C1 RF IN 68pF RFIN1 GND VCTL 6 1 VCTL=1.8V or 0.0V 5 L1 33nH Logic Circuit Bias Circuit C3 68pF 2 L2 68nH RFOUT1 4 RFIN2 3 RFOUT2 RF OUT VDD=2.8V C2 1000pF L3 33nH Q TEST PCB LAYOUT VCTL Parts List RF IN C1 Parts ID L1 Notes RF OUT L1, L3 C3 L2 L2 L3 C2 C1~C3 VDD MURATA (LQP03T series) TAIYO-YUDEN (HK0603 series) MURATA (GRM03 series) PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH=0.4mm (Z0=50 ohm) PCB SIZE=16.8mmx16.8mm PRECAUTIONS [1] C1 and C3 are DC-Blocking capacitors, and L1 is a DC-feed inductor. [2] L2 and L3 formed the output matching circuit. [3] C2 is a bypass capacitor. [4] Ground terminals (6pin) should be connected with ground plane as close as possible in order to limit ground path induction. [5] All external parts are placed as close as possible to the IC. - 13 - NJG1134HA8 Q MEASUREMENT BLOCK DIAGRAM VCTL=1.8V or 0.0V VDD =2.8V RF Input DUT RF Output Network Analyzer S parameter Measurement Block Diagram VCTL=1.8V VDD =2.8V RF Input DUT RF Output Noise Source NF Analyzer Noise Figure Measurement Block Diagram freq.1 VCTL=1.8V or 0.0V 2dB Attenuator VDD =2.8V Signal Generator RF Input Signal Generator freq.2 DUT Power Comb. 2dB Attenuator Input IP3 Measurement Block Diagram - 14 - RF Output Spectrum Analyzer NJG1134HA8 0.38±0.06 +0.012 0.038-0.009 QPACKAGE OUTLINE (USB6-A8) 0.03 0.2 (MIN0.15) S S TERMINAL TREAT Substrate Molding material UNIT WEIGHT :Au :FR5 :Epoxy resin :mm :1.1mg 0.2±0.04 C0.1 6 R0.05 5 1 4 0.2±0.04 0.4 0.6 Photo resist coating 0.8 1.2±0.05 0.1±0.05 2 3 0.4 0.2±0.07 1.0±0.05 Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - 15 -