Product specification 2SA1365 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Excellent linearity nof DC forward current gain. 0.4 3 Low collector to emitter saturation voltage. 1 High collector current. 0.55 Super mini package for easy mounting. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 High gain band width product. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -25 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -4 V Peak collector current ICM -1 A Collector current IC -700 mA Collector dissipation (Ta=25 ) PC 150 mW Junction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V (BR) CBO IC = -10 ìA, IE = 0 -25 V Collector-emitter breakdown voltage V (BR) CEO IC = -100 ìA,RBE = -20 V Emitter-base breakdown voltage V (BR) EBO IE = -10 ìA, IC = 0 -4 V Collector cut-off current ICBO VCB = -25 V, IE = 0 Emitter cut-off current IEBO VEB = -2 V, IC = 0 DC current gain ( * ) hFE VCE = -4 V, IC = -100 mA Collector-emitter saturation voltage VCE IC = -500 mA, IB = -25 mA -0.2 VCE = -6 V, IE = 10 mA 180 Gain band width product fT 150 -1 ìA -1 ìA 800 -0.5 V MHz * It shows hFE classification in right table. hFE Classification Marking AE hFE 150 300 http://www.twtysemi.com AF 250 AG 500 400 800 [email protected] 4008-318-123 1 of 1