Ordering number : EN6306B 2SA2012 Bipolar Transistor –30V, –5A, Low VCE(sat) PNP Single PCP http://onsemi.com Applicaitons Relay drivers, lamp drivers, motor drivers, flash • Features • Large current capacity Adoption of MBIT processes Low collector to emitter saturation voltage Ultrasmall-sized package permitting applied sets to be made small and slim High allowable power dissipation • • • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Base Voltage Conditions Ratings Unit VCBO VCEO --30 --30 V --5 V Collector Current VEBO IC --5 A Collector Current (Pulse) ICP --8 A Collector to Emitter Voltage Emitter to Base Voltage V Continued on next page. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7007B-004 • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel Top View 2SA2012-TD-E Packing Type: TD 4.5 1.6 LOT No. AS 2.5 2 4.0 1.0 1 Marking 1.5 TD 3 0.4 0.4 0.5 1.5 3.0 Electrical Connection 2 0.75 1 3 1 : Base 2 : Collector 3 : Emitter Bottom View PCP Semiconductor Components Industries, LLC, 2013 December, 2013 D0413 TKIM TC-00003071/40710EA TKIM/21400TS (KOTO) TA-2520 No.6306-1/5 2SA2012 Continued from preceding page. Parameter Symbol Base Current Conditions Ratings IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Unit --600 mA When mounted on ceramic substrate (250mm2×0.8mm) 1.3 W Tc=25°C 3.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product VCE=--2V, IC=--500mA VCE=--10V, IC=--500mA VCE(sat)1 Collector to Emitter Saturation Voltage VCE(sat)2 Base to Emitter Saturation Voltage VBE(sat) V(BR)CBO Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Ratings min typ max VCB=--30V, IE=0A VEB=--4V, IC=0A fT Cob Output Capacitance Conditions 200 Unit --0.1 μA --0.1 μA 560 350 MHz VCB=(--)10V, f=1MHz IC=--1.5A, IB=--30mA 30 --140 --210 mV pF IC=--2.5A, IB=--125mA IC=--1.5A, IB=--30mA --170 --260 mV --0.83 --1.2 V IC=--10μA, IE=0A --30 V V(BR)CEO V(BR)EBO ton IC=--1mA, RBE=∞ IE=--10μA, IC=0A --30 V tstg tf See specified Test Circuit. --5 V 50 ns 270 ns 25 ns Switching Time Test Circuit PW=20μs D.C.≤1% IB1 IB2 OUTPUT INPUT VR 50Ω RB + 100μF 24Ω + 470μF VBE=5V VCC= --12V IC=20IB1= --20IB2= --500mA Ordering Information Device 2SA2012-TD-E Package Shipping memo PCP 1,000pcs./reel Pb Free No.6306-2/5 2SA2012 IC -- VCE --40mA --3 --30mA --20mA --2 --10mA --1 --4.0 --3.5 25°C --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 IB=0mA 0 0 --0.2 --0.4 --0.6 --0.8 0 --1.0 Collector to Emitter Voltage, VCE -- V Ta=75°C 25°C 2 --25°C 100 7 5 3 2 10 --0.01 3 5 7 --0.1 2 3 5 7 --1.0 2 3 --1.4 IT00136 5 3 2 100 7 5 3 2 7 5 3 2 10 7 5 3 2 2 3 5 7 --1.0 2 3 5 7 --10 2 Collector to Base Voltage, VCB -- V 3 5 2 --100 C 75° Ta= °C --25 25°C 2 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 IT00141 3 5 7 --10 IT00148 3 2 --100 7 5 °C 75 = Ta 3 5 --2 2 °C 25°C --10 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A Base to Emitter Saturation Voltage, VBE(sat) -- V 2 3 5 7 --1.0 5 7 --10 IT00140 VBE(sat) -- IC IC / IB=50 7 3 2 3 IC / IB=20 --10 5 3 2 VCE(sat) -- IC IT00146 VCE(sat) -- IC 5 5 7 --0.1 5 7 5 --0.01 IC / IB=50 7 3 Collector Current, IC -- A Collector to Emitter Saturation Voltage, VCE(sat) -- mV 100 5 7 --0.1 2 7 2 Output Capacitance, Cob -- pF --1.2 VCE=--10V 5 7--0.01 3 Collector to Emitter Saturation Voltage, VCE(sat) -- mV --1.0 f T -- IC --1000 f=1MHz --10 --0.01 --0.8 7 5 7 --10 IT00138 Cob -- VCB 5 7 --0.6 10 2 Collector Current, IC -- A --1000 --0.4 1000 Gain-Brandwidth Product, f T -- MHz 5 3 --0.2 Base to Emitter Voltage, VBE -- V VCE=--2V 7 DC Current Gain, hFE 0 IT00134 hFE -- IC 1000 --25°C --90mA VCE=--2V --4.5 Ta=7 5°C Collector Current, IC -- A mA 00 --1 --4 IC -- VBE --5.0 --80mA --70mA --60mA --50mA Collector Current, IC -- A --5 5 3 2 Ta=--25°C --1.0 7 75°C 5 25°C 3 2 --0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 IT00144 No.6306-3/5 2SA2012 SOA 2 10 1ms ms Collector Dissipation, PC -- W s 3 2 0μ IC= --5A 50 DC --1.0 7 5 s 0μ Collector Current, IC -- A ICP= --8A 10 --10 7 5 op era tio n 3 2 --0.1 7 5 3 2 Tc=25°C Single pulse --0.01 --0.1 2 3 PC -- Ta 2.0 100ms 1.5 W he 1.3 nm ou nte do 1.0 nc era mi 0.5 cs ub str ate (25 0m m2 ✕0 .8m m) 0 5 7 --1.0 2 3 5 7 --10 Collector to Emitter Voltage, VCE -- V 2 3 5 IT00150 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT00151 PC -- Tc 4.0 Collector Dissipation, PC -- W 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT01532 No.6306-4/5 2SA2012 Outline Drawing 2SA2012-TD-E Land Pattern Example Mass (g) Unit 0.058 mm * For reference Unit: mm 0.9 2.2 3.7 45° 45° 1.0 1.8 1.5 1.0 1.5 3.0 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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