2SA2018 / 2SA2030 Transistors Low frequency transistor 2SA2018 / 2SA2030 The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. !External dimensions (Units : mm) !Applications For switching, for muting. 0.8 1.6 1.0 0.2 (2) (3) 0.3 !Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ 250mV At IC = 200mA / IB = 10mA 0.5 0.5 (1) 0.2 2SA2018 0.7 0~0.1 0.55 0.15 1.6 0.1Min. ROHM : EMT3 EIAJ : SC-75A JEDEC : SOT-416 (1) Emitter (2) Base (3) Collector 2SA2030 Limits Unit VCBO VCEO IC 15 12 500 V V mA ICP PC 1 150 A mW Tj Tstg 150 -55~+150 ˚C ˚C (3) Collector power dissipation Junction temperature Storage temperature 0.13 0~0.1 Collector current ∗ ROHM : VMT3 ∗Single pulse, PW=1ms !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage BVCBO BVCEO 15 12 6 - - V V V IC=10µA IC=1mA 270 - 100 260 6.5 100 680 250 nA mV VCB=15V - MHz pF Collector cutoff current BVEBO ICBO DC current transfer ratio Collector-emitter saturation voltage hFE VCE(sat) fT Transition frequency Output capacitance Cob - !Packaging specifications and hFE Package name Code hFE Basic ordering unit (pieces) Taping TL T2L 3000 8000 - 2SA2018 2SA2030 - Conditions IE=10µA VCE=2V / IC=10mA IC=200mA / IB=10mA VCE=2V , IE=10mA , fT=100MHz VCB=10V , IE=0A , f=1MHz 0.22 0.5 (1) Collector-emitter voltage Type 0.2 (2) 0.8 Symbol 1.2 0.32 Parameter Collector-base voltage 1.2 0.8 0.2 0.4 0.4 !Absolute maximum ratings (Ta=25°C) 0.15Max. (1) Base (2) Emitter (3) Collector 2SA2018 / 2SA2030 Transistors 1000 1000 DC CURRENT GAIN : hFE Ta=25˚C 200 100 20 10 Ta= -40˚C Ta=125 ˚C 50 5 200 50 20 10 5 2 1 1 0.5 1.0 1.5 Ta= -40˚C 100 2 0 1 2 20 50 100 200 500 1000 100 50 IC/IB=50 IC/IB=20 20 IC/IB=10 10 5 2 1 2 5 10 20 50 100 200 500 1000 1000 IE=0A f=1MHz Ta=25˚C 500 200 100 50 Cib 20 10 Cob 5 2 1 0.1 0.2 0.5 1 2 5 10 20 2000 Ta= -40˚C Ta=25˚C 1000 500 Ta=125˚C 200 100 50 20 10 1 2 5 10 20 50 100 200 500 1000 Fig.5 Base-emitter saturation voltage vs. collector current Fig.4 Collector-emitter saturation voltage vs. collector current 50 100 EMITTER TO BASE VOLTAGE : VEB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 200 100 Ta=125˚C 50 Ta=25˚C 20 Ta= -40˚C 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) 1000 5000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) IC/IB=20 500 VCE=2V Ta=25˚C IC/IB=20 TRANSITION FREQUENCY : fT (MHz) 200 BASER SATURATION VOLTAGE : VBE (sat) (mV) Ta=25˚C 500 1000 Fig.3 Collector-emitter saturation voltage vs. collector current ( I ) 10000 1000 EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 10 Fig.2 DC current gain vs. collector current Fig.1 Grounded emitter propagation characteristics 1 5 COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) VCE=2V Ta=125˚C 500 Ta=25˚C COLLECTOR CURRENT : IC (mA) VCE=2V 500 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) !Electrical characteristic curves 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 EMITTER CURRENT : IC (mA) Fig.6 Gain bandwidth product vs. emitter current 1000