Inchange Semiconductor Product Specification 2SB1055 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1486 ・High fT ・Satisfactory linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter 导体 半 电 固 Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER OND R O T UC VALUE UNIT -120 V -120 V -5 V Collector current -6 A ICP Collector current-peak -10 A PC Collector power dissipation VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO IC IC M E ES ANG INCH Emitter-base voltage CONDITIONS Open emitter Open base Open collector TC=25℃ 70 W 3 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1055 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat PARAMETER CONDITIONS MIN TYP. MAX UNIT Collector-emitter saturation voltage IC=-4A ;IB=-0.4A -2.0 V VBE Base-emitter on voltage IC=-4A ; VCE=-5V -1.8 V ICBO Collector cut-off current VCB=-120V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -50 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE -2 DC current gain IC=-1A ; VCE=-5V 40 hFE -3 DC current gain IC=-4A ; VCE=-5V 20 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 230 pF fT Transition frequency IC=-0.5A ; VCE=-5V 20 MHz 体 半导 固电 40-80 Q M E S GE P N A H INC 60-120 R O T UC D N O IC hFE-2 classifications R 200 100-200 2 Inchange Semiconductor Product Specification 2SB1055 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 Inchange Semiconductor Product Specification 2SB1055 Silicon PNP Power Transistors 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC 4