ONSEMI NTD4815NH-35G

NTD4815NH
Power MOSFET
30 V, 35 A, Single N−Channel, DPAK/IPAK
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Low RG
These are Pb−Free Devices
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V(BR)DSS
RDS(ON) MAX
ID MAX
15 mW @ 10 V
30 V
Applications
• CPU Power Delivery
• DC−DC Converters
• High Side Switching
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
G
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
8.5
A
S
N−CHANNEL MOSFET
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
1.92
W
Continuous Drain
Current RqJA
(Note 2)
TA = 25°C
ID
6.9
A
3
DPAK
CASE 369C
(Bent Lead)
STYLE 2
6.5
4
1 2
TA = 85°C
5.3
TA = 25°C
PD
1.26
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
35
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
32.6
W
TA = 25°C
IDM
87
A
TA = 25°C
IDmaxPkg
35
A
TJ,
TSTG
−55 to
+175
°C
IS
27
A
Drain to Source dV/dt
dV/dt
6
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
IL = 15.4 Apk, L = 0.3 mH, RG = 25 W)
EAS
35.6
mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Pulsed Drain
Current
TC = 85°C
tp=10ms
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
27
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2006
December, 2006 − Rev. 0
1
1
2 3
1
2
3
3 IPAK
IPAK
CASE 369AC
CASE 369D
(Straight Lead) (Straight Lead
DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
YWW
48
15NHG
Power Dissipation
RqJA (Note 2)
4
4
TA = 85°C
4
Drain
4
Drain
YWW
48
15NHG
Parameter
Steady
State
35 A
27.7 mW @ 4.5 V
YWW
48
15NHG
•
•
•
•
•
2
1 2 3
1 Drain 3
Gate Source Gate Drain Source 1 2 3
Gate Drain Source
Y
= Year
WW
= Work Week
4815NH= Device Code
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
NTD4815NH/D
NTD4815NH
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case (Drain)
Parameter
RqJC
4.6
°C/W
Junction−to−TAB (Drain)
RqJC−TAB
3.5
Junction−to−Ambient – Steady State (Note 1)
RqJA
78
Junction−to−Ambient – Steady State (Note 2)
RqJA
119
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
25
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25 °C
1
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.5
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
1.5
5.6
VGS = 10 V to
11.5 V
ID = 30 A
12
ID = 15 A
11.5
VGS = 4.5 V
ID = 30 A
23.5
ID = 15 A
20.1
gFS
VDS = 15 V, ID = 10 A
mV/°C
15
27.7
6.0
mW
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
103
Total Gate Charge
QG(TOT)
6.4
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
845
VGS = 0 V, f = 1.0 MHz, VDS = 12 V
183
pF
6.8
1.5
VGS = 4.5 V, VDS = 15 V; ID = 30 A
2.9
nC
2.7
VGS = 11.5 V, VDS = 15 V;
ID = 30 A
15.2
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
11.3
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
17.6
11
2.8
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTD4815NH
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
6.7
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
14.7
17.6
17.8
18.4
1.8
2.3
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.98
TJ = 125°C
0.92
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 30 A
1.2
V
18.1
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
11.3
ns
6.8
QRR
8.2
nC
Source Inductance
LS
2.49
nH
Drain Inductance, DPAK
LD
0.0164
Drain Inductance, IPAK
LD
Gate Inductance
LG
3.46
Gate Resistance
RG
0.6
PACKAGE PARASITIC VALUES
TA = 25°C
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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3
1.88
W
NTD4815NH
TYPICAL PERFORMANCE CURVES
80
60
10 V
8V
6V
60
50
5V
40
4.5 V
30
4.2 V
4V
20
3.8 V
10
3.5 V
3.2 V
10
0
0
2
8
6
4
40
30
20
TJ = 125°C
TJ = 25°C
10
TJ = −55°C
0
4
Figure 2. Transfer Characteristics
0.02
0.01
0
4
3
6
5
7
8
9
10
11
12
6
5
Figure 1. On−Region Characteristics
0.03
0.05
TJ = 25°C
0.04
VGS = 4.5 V
0.03
0.02
0.01
VGS = 11.5 V
0
10
20
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
30
50
40
60
70
80
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
1.8
VGS = 0 V
ID = 30 A
VGS = 10 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
3
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
ID = 30 A
TJ = 25°C
1.6
2
1
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.04
2
50
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VDS ≥ 10 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
70
TJ = 25°C
1.4
1.2
1.0
TJ = 150°C
1000
TJ = 100°C
0.8
0.6
−50 −25
100
0
25
50
75
100
125
150
175
0
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
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4
30
NTD4815NH
C, CAPACITANCE (pF)
1000
15
TJ = 25°C
VGS = 0 V
800
600
400
Coss
200
Crss
0
0
5
10
15
20
30
25
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
9
6
VDS
VGS
15
10
Q2
Q1
5
ID = 30 A
TJ = 25°C
0
0
2
4
6
8
10
12
14 16
QG, TOTAL GATE CHARGE (nC)
0
20
18
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
35
IS, SOURCE CURRENT (AMPS)
VDD = 15 V
ID = 30 A
VGS = 11.5 V
td(off)
tr
10
td(on)
tf
1
10
RG, GATE RESISTANCE (OHMS)
VGS = 0 V
30
100
20
15
10
5
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
100 ms
1 ms
10 ms
dc
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
100
1
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
Figure 10. Diode Forward Voltage vs. Current
1000
VGS = 20 V
SINGLE PULSE
TC = 25°C
0.4
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
10
TJ = 25°C
25
0
0.3
1
I D, DRAIN CURRENT (AMPS)
20
QT
3
100
t, TIME (ns)
25
12
Ciss
VDS , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1200
VGS , GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES
40
ID = 15.4 A
35
30
25
20
15
10
5
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
150
100
125
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
175
NTD4815NH
TYPICAL PERFORMANCE CURVES
I D, DRAIN CURRENT (AMPS)
100
25°C
100°C
125°C
10
1
0.1
10
100
PULSE WIDTH (ms)
1
1000
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 13. Avalanche Characteristics
1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
SINGLE PULSE
0.01
1.0E−05
1.0E−04
t1
t2
DUTY CYCLE, D = t1/t2
1.0E−03
1.0E−02
t, TIME (ms)
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
1.0E−01
1.0E+00
1.0E+01
Figure 14. Thermal Response
ORDERING INFORMATION
Package
Shipping†
NTD4815NHT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NTD4815NH−1G
IPAK
(Pb−Free)
75 Units / Rail
NTD4815NH−35G
IPAK Trimmed Lead
(3.5 " 0.15 mm)
(Pb−Free)
75 Units / Rail
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
NTD4815NH
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE O
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
3.0
0.118
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
NTD4815NH
PACKAGE DIMENSIONS
3 IPAK, STRAIGHT LEAD
CASE 369AC−01
ISSUE O
B
V
NOTES:
1.. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2.. CONTROLLING DIMENSION: INCH.
3. SEATING PLANE IS ON TOP OF
DAMBAR POSITION.
4. DIMENSION A DOES NOT INCLUDE
DAMBAR POSITION OR MOLD GATE.
C
E
R
DIM
A
B
C
D
E
F
G
H
J
K
R
V
W
A
SEATING PLANE
K
W
F
J
G
H
D
3 PL
0.13 (0.005) W
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.043
0.090 BSC
0.034 0.040
0.018 0.023
0.134 0.142
0.180 0.215
0.035 0.050
0.000 0.010
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.09
2.29 BSC
0.87
1.01
0.46
0.58
3.40
3.60
4.57
5.46
0.89
1.27
0.000
0.25
IPAK (STRAIGHT LEAD DPAK)
CASE 369D−01
ISSUE B
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
3 PL
0.13 (0.005)
M
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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For additional information, please contact your local
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NTD4815NH/D