Inchange Semiconductor Product Specification 2SB1157 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1712 ・High fT ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -5 A ICP Collector current-peak -8 A PC Collector power dissipation TC=25℃ 60 Ta=25℃ 3 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1157 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBE CONDITIONS MAX UNIT IC=-3A ;IB=-0.3A -2.0 V Base-emitter on voltage IC=-3A ; VCE=-5V -1.8 V ICBO Collector cut-off current VCB=-100V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -50 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE -2 DC current gain IC=-1A ; VCE=-5V 60 hFE -3 DC current gain IC=-3A ; VCE=-5V 20 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 130 pF fT Transition frequency IC=-0.5A ; VCE=-5V 20 MHz hFE-2 classifications Q S P 60-120 80-160 100-200 2 MIN TYP. 200 Inchange Semiconductor Product Specification 2SB1157 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3