ONSEMI NTF5P03T3G

NTF5P03T3G, NVF5P03T3G
Power MOSFET
5.2 A, 30 V
P−Channel SOT−223
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Features
•
•
•
•
•
•
•
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature SOT−223 Surface Mount Package
Avalanche Energy Specified
AEC−Q101 Qualified and PPAP Capable − NVF5P03T3G
These Devices are Pb−Free and are RoHS Compliant
5.2 AMPERES, 30 VOLTS
RDS(on) = 100 mW
S
G
Applications
•
•
•
•
•
DC−DC Converters
Power Management
Motor Controls
Inductive Loads
Replaces MMFT5P03HD
D
P−Channel MOSFET
4
1
2
MARKING
DIAGRAM
& PIN
ASSIGNMENT
Drain
4
3
SOT−223
CASE 318E
STYLE 3
AYM
5P03 G
G
1
Gate
2
3
Drain Source
A
= Assembly Location
Y
= Year
M
= Date Code
5P03 = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
NTF5P03T3G
SOT−223
(Pb−Free)
4000 / Tape &
Reel
NVF5P03T3G
SOT−223
(Pb−Free)
4000 / Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 5
1
Publication Order Number:
NTF5P03T3/D
NTF5P03T3G, NVF5P03T3G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Negative sign for P−Channel devices omitted for clarity
Rating
Symbol
Max
Unit
Drain−to−Source Voltage
VDSS
−30
V
Drain−to−Gate Voltage (RGS = 1.0 MW)
VDGR
−30
V
Gate−to−Source Voltage − Continuous
VGS
± 20
V
RTHJA
PD
40
3.13
25
−5.2
−4.1
−26
°C/W
Watts
mW/°C
A
A
A
IDM
80
1.56
12.5
−3.7
−2.9
−19
°C/W
Watts
mW/°C
A
A
A
TJ, Tstg
− 55 to 150
°C
1 sq in
FR−4 or G−10 PCB
10 seconds
Minimum
FR−4 or G−10 PCB
10 seconds
Thermal Resistance − Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current − Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1)
Thermal Resistance − Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current − Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C
(VDD = −30 Vdc, VGS = −10 Vdc, Peak IL = −12 Apk, L = 3.5 mH, RG = 25 W)
ID
ID
IDM
RTHJA
PD
ID
ID
EAS
250
mJ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Repetitive rating; pulse width limited by maximum junction temperature.
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2
NTF5P03T3G, NVF5P03T3G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
−30
−
−
−28
−
−
−
−
−
−
−1.0
−25
−
−
± 100
−1.0
−
−1.75
3.5
−3.0
−
−
76
107
100
150
gfs
2.0
3.9
−
Mhos
Ciss
−
500
950
pF
Coss
−
153
440
Crss
−
58
140
td(on)
−
10
24
tr
−
33
48
td(off)
−
38
94
tf
−
20
92
td(on)
−
16
38
tr
−
45
110
td(off)
−
23
60
tf
−
24
80
QT
−
15
38
Q1
−
1.6
−
Q2
−
3.5
−
Q3
−
2.6
−
−
−
−1.1
−0.89
−1.5
−
OFF CHARACTERISTICS
V(BR)DSS
Drain−to−Source Breakdown Voltage (Cpk ≥ 2.0) (Notes 2 and 4)
(VGS = 0 Vdc, ID = −0.25 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = −24 Vdc, VGS = 0 Vdc)
(VDS = −24 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate−Body Leakage Current
(VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/°C
mAdc
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Cpk ≥ 2.0) (Notes 2 and 4)
(VDS = VGS, ID = −0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Cpk ≥ 2.0) (Notes 2 and 4)
(VGS = −10 Vdc, ID = −5.2 Adc)
(VGS = −4.5 Vdc, ID = −2.6Adc)
RDS(on)
Forward Transconductance (Note 2)
(VDS = −15 Vdc, ID = −2.0 Adc)
Vdc
mV/°C
mW
DYNAMIC CHARACTERISTICS
(VDS = −25 Vdc, VGS = 0 V,
f = 1.0 MHz)
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 3)
(VDD = −15 Vdc, ID = −4.0 Adc,
VGS = −10 Vdc,
RG = 6.0 W) (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = −15 Vdc, ID = −2.0 Adc,
VGS = −10 Vdc,
RG = 6.0 W) (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(VDS = −24 Vdc, ID = −4.0 Adc,
VGS = −10 Vdc) (Note 2)
ns
ns
nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = −4.0 Adc, VGS = 0 Vdc)
(IS = −4.0 Adc, VGS = 0 Vdc,
TJ = 125°C) (Note 2)
VSD
Reverse Recovery Time
(IS = −4.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 2)
trr
−
34
−
ta
−
20
−
tb
−
14
−
QRR
−
0.036
−
Reverse Recovery Stored Charge
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
3. Switching characteristics are independent of operating junction temperatures.
4. Reflects typical values.
Max limit * Typ
Cpk +
3 SIGMA
Ť
Ť
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3
Vdc
ns
mC
NTF5P03T3G, NVF5P03T3G
TYPICAL ELECTRICAL CHARACTERISTICS
4
−ID, DRAIN CURRENT (A)
−3.9 V
−6 V
−8 V
−10 V
3
10
TJ = 25°C
−3.7 V
−4.1 V
−4.3 V
−3.5 V
−4.5 V
−3.1 V
2
VDS ≥ −10 V
9
−ID, DRAIN CURRENT (A)
5
−2.8 V
1
VGS = −2.7 V
8
7
6
5
4
3
TJ = 25°C
2
TJ = 100°C
1
0
0
0
0.2 0.4 0.6 0.8 1
1.2 1.4 1.6 1.8
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
2
2
2.5
3
3.5
4
4.5
−VGS, GATE−TO−SOURCE VOLTAGE (V)
5
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
TJ = −55°C
0.200
0.200
ID = −5.2 A
TJ = 25°C
0.175
0.150
TJ = 25°C
0.180
0.160
0.140
VGS = −4.5 V
0.120
0.125
0.100
0.100
0.060
0.075
0.040
0.050
0.025
0.020
3
4
5
6
7
8
9
−VGS, GATE−TO−SOURCE VOLTAGE (V)
0.000
10
4
5.5
7
8.5
10
1000
VGS = 0 V
ID = −5.2 A
VGS = −10 V
−IDSS, LEAKAGE (nA)
1.45
2.5
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.65
1.55
1
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
VGS = −10 V
0.080
1.35
1.25
1.15
1.05
0.95
0.85
TJ = 125°C
100
TJ = 100°C
0.75
0.65
−50
10
−25
0
25
50
75
100
125
150
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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4
30
NTF5P03T3G, NVF5P03T3G
TJ = 25°C
VGS = 0 V
C, CAPACITANCE (pF)
900
800
700
600
Ciss
500
400
300
200
Coss
100
Crss
0
0
5
10
15
20
25
DRAIN−TO−SOURCE VOLTAGE (V)
30
12.5
25
−VDS
5.0
−IS, SOURCE CURRENT (A)
t, TIME (ns)
tf
100
ID = −2 A
TJ = 25°C
2.5
0
0
10
tr
td(on)
10
RG, GATE RESISTANCE (W)
100
2.50
2.00
1.50
1.00
0.50
0.00
dc
10 ms
1 ms
0.1
0.01
0.1
100 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10 ms
10
0.5
0.55 0.6
0.65 0.7
0.75 0.8
0.85 0.9
0.95 1
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
VGS = 20 V
SINGLE PULSE
TC = 25°C
1
0
60
3.00
Figure 10. Diode Forward Voltage versus Current
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
−ID, DRAIN CURRENT (AMPS)
10
20
30
40
50
Qg, TOTAL GATE CHARGE (nC)
5
VGS = 0 V
TJ = 25°C
3.50
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
100
10
Q2
Q1
4.00
VDD = −15 V
ID = −4.0 A
VGS = −10 V
1
15
−VGS
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
td(off)
10
20
7.5
Figure 7. Capacitance Variation
1000
QT
10
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
−VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL ELECTRICAL CHARACTERISTICS
100
250
ID = −6 A
200
150
100
50
0
25
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Mounted on 2”sq. FR4 board (1”sq. 2 oz. Cu 0.06” thick
single sided) with on die operating, 10 s max.
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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5
150
NTF5P03T3G, NVF5P03T3G
TYPICAL ELECTRICAL CHARACTERISTICS
RTHJA(t), EFFECTIVE TRANSIENT
THERMAL RESPONSE
1
D = 0.5
0.2
NORMALIZED TO RqJA AT STEADY STATE (1″ PAD)
0.1
0.1
0.05
0.0175 W
CHIP
JUNCTION 0.0154 F
0.02
0.0710 W
0.2706 W 0.5779 W 0.7086 W
0.0854 F
0.3074 F
1.7891 F 107.55 F
0.01
AMBIENT
SINGLE PULSE
0.01
1.0E-03
1.0E-02
1.0E-01
1.0E+00
t, TIME (s)
1.0E+01
Figure 13. FET Thermal Response
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6
1.0E+02
1.0E+03
NTF5P03T3G, NVF5P03T3G
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
4
HE
E
1
2
3
b
e1
e
0.08 (0003)
A1
C
q
A
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,
1994.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
INCHES
DIM
MIN
NOM
MAX
MIN
NOM
0.064
A
1.50
1.63
1.75
0.060
A1
0.02
0.06
0.10
0.001
0.002
0.030
b
0.60
0.75
0.89
0.024
b1
2.90
3.06
3.20
0.115
0.121
0.012
c
0.24
0.29
0.35
0.009
0.256
D
6.30
6.50
6.70
0.249
E
3.30
3.50
3.70
0.130
0.138
0.091
e
2.20
2.30
2.40
0.087
e1
0.037
0.85
0.94
1.05
0.033
L
0.20
−−−
−−−
0.008
−−−
L1
1.50
1.75
2.00
0.060
0.069
HE
6.70
7.00
7.30
0.264
0.276
0°
10°
0°
−
−
q
STYLE 3:
PIN 1.
2.
3.
4.
L1
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
GATE
DRAIN
SOURCE
DRAIN
SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
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NTF5P03T3/D