PANASONIC 2SB1321A

Transistors
2SB1321A
Silicon PNP epitaxial planer type
Unit: mm
6.9±0.1
4.0
0.8
0.15
0.7
1.05 2.5±0.1
(1.45)
±0.05
0.8
1.0
■ Features
3.5±0.1
For general amplification
Complementary to 2SD1992A
0.85
14.5±0.5
0.65 max.
• Large collector power dissipation PC (600 mW)
• Allowing supply with the radial taping
+0.1
■ Absolute Maximum Ratings Ta = 25°C
1
Symbol
Rating
Unit
Collector to base voltage
VCBO
−60
V
Collector to emitter voltage
VCEO
−50
V
Emitter to base voltage
VEBO
−7
V
Peak collector current
ICP
−1
A
Collector current
IC
−500
mA
Collector power dissipation
PC
600
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
2
3
2.5±0.1
Parameter
2.5±0.5
+0.1
2.5±0.5
0.45−0.05
0.45−0.05
1: Emitter
2: Collector
3: Base
MT1 Type Package
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1.2±0.1
0.65
max.
0.45+− 0.1
0.05
(HW Type)
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
ICBO
VCB = −20 V, IE = 0
− 0.1
µA
ICEO
VCE = −20 V, IB = 0
−1
µA
Collector to base voltage
VCBO
IC = −10 µA, IE = 0
−60
V
Collector to emitter voltage
VCEO
IC = −2 mA, IB = 0
−50
V
Emitter to base voltage
VEBO
IE = −10 µA, IC = 0
−7
Forward current transfer ratio *1
hFE1 *2
VCE = −10 V, IC = −10 mA
85
hFE2
VCE = −10 V, IC = −500 mA
40
VCE(sat)
IC = −300 mA, IB = −30 mA
Collector cutoff current
Collector to emitter saturation voltage
Transition frequency
VCB = −10 V, IE = 10 mA, f = 200 MHz
fT
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
V
340
− 0.35
− 0.6
200
6
V
MHz
15
pF
Note) *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
No-rank
hFE1
85 to 170
120 to 240
170 to 340
85 to 340
Product of no-rank is not classified and have no indication for rank.
1
2SB1321A
Transistors
PC  Ta
IC  VCE
IB = −10 mA
−9 mA
−8 mA
−7 mA
−6 mA
−5 mA
−4 mA
−600
400
300
−400
200
−3 mA
−2 mA
−200
100
0
20
40
60
80 100 120 140 160
0
–2
−10
−3
Ta = 75°C
25°C
−25°C
–8
–10
−100
0
–12
Base current IB (mA)
600
IC / IB = 10
−30
−10
−3
25°C
−1
Ta = −25°C
75°C
− 0.03
−1
−3
−10
− 0.01
− 0.01 − 0.03 − 0.1 − 0.3
−1
−3
VCE = −10 V
500
400
300
Ta = 75°C
25°C
−25°C
200
100
0
− 0.01 − 0.03 − 0.1 − 0.3
−10
Cob  VCB
24
200
180
160
140
120
100
80
60
40
20
20
−10
VCER  RBE
IE = 0
f = 1 MHz
Ta = 25°C
22
Collector output capacitance Cob (pF)
VCB = −10 V
Ta = 25°C
−3
18
16
14
12
10
8
6
4
−120
Collector to emitter voltage VCER (V)
fT  IE
240
−1
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
220
0 −1 −2 −3 −4 −5 −6 −7 −8 −9 −10
hFE  IC
− 0.1
− 0.01
− 0.01 − 0.03 − 0.1 − 0.3
Transition frequency fT (MHz)
–6
− 0.3
− 0.03
IC = −2 mA
Ta = 25°C
−100
−80
−60
−40
−20
2
1
2
3
5
10
20 30 50
Emitter current IE (mA)
2
–4
−100
Base to emitter saturation voltage VBE(sat) (V)
Collector to emitter saturation voltage VCE(sat) (V)
IC / IB = 10
− 0.1
−200
VBE(sat)  IC
−30
− 0.3
−300
−1 mA
VCE(sat)  IC
−1
−400
Collector to emitter voltage VCE (V)
Ambient temperature Ta (°C)
−100
−500
Forward current transfer ratio hFE
0
Collector current IC (mA)
−600
−800
500
VCE = −10 V
Ta = 25°C
−700
−1 000
600
0
−800
Ta = 25°C
Collector current IC (mA)
Collector power dissipation PC (mW)
700
0
IC  IB
−1 200
800
100
0
−1
−2 −3 −5
−10
−20−30 −50 −100
Collector to base voltage VCB (V)
0
1
3
10
30
100
300
1 000
Base to emitter resistance RBE (kΩ)
Transistors
2SB1321A
ICEO  Ta
104
VCE = −10 V
ICEO (Ta)
ICEO (Ta = 25°C)
103
102
10
1
0 20 40 60 80 100 120 140 160 180 200
Ambient temperature Ta (°C)
3