isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE= 2000(Min.)@IC= -3A ·High Speed Switching ·Complement to Type 2SD1276A APPLICATIONS ·Designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -8 A Collector Power Dissipation @ Ta=25℃ 2 PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 40 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn 2SB950A isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB950A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA -4.0 V VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -3V -2.5 V ICBO Collector Cutoff Current VCB= -100V ; IE= 0 -0.2 mA ICEO Collector Cutoff Current VCE= -40V ; IB= 0 -0.5 mA IEBO Emitter Cutoff Current VEB= -5V ; IC= 0 -2.0 mA hFE-1 DC Current Gain IC= -0.5A ;VCE= -3V 1000 hFE-2 DC Current Gain IC= -3A ; VCE= -3V 2000 Current-Gain—Bandwidth Product IC=-0.5A;VCE= -10V;ftest=1MHz fT CONDITIONS MIN TYP. MAX -80 UNIT V B B B 10000 20 MHz 0.3 μs 2.0 μs 0.5 μs Switching times ton Turn-on Time tstg Storage Time Fall Time tf IC= -3A,IB1= -IB2= -12mA, VCC= -50V hFE-2 Classifications Q P 2000-5000 4000-10000 isc Website：www.iscsemi.cn 2