Transistor 2SC1360, 2SC1360A Silicon NPN epitaxial planer type For intermadiate frequency amplification of TV image Unit: mm 5.9±0.2 4.9±0.2 High transition frequency fT. Large collector power dissipation PC. Parameter 0.7±0.1 2SC1360 base voltage 2SC1360A Collector to 2SC1360 emitter voltage 2SC1360A Ratings 50 VCBO Unit 45 V 60 +0.2 VEBO 4 V Collector current IC 50 mA Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Collector to base 2SC1360 voltage 2SC1360A Collector to emitter 2SC1360 voltage 2SC1360A 0.45–0.1 1.27 1.27 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package (Ta=25˚C) Symbol Collector cutoff current +0.2 0.45–0.1 Emitter to base voltage Parameter 2.54±0.15 V 60 VCEO ■ Electrical Characteristics +0.3 (Ta=25˚C) Symbol Collector to 0.7–0.2 ■ Absolute Maximum Ratings 13.5±0.5 ● 3.2 ● 8.6±0.2 ■ Features ICBO Conditions min VCB = 20V, IE = 0 IC = 100µA, IE = 0 VCEO IC = 1mA, IB = 0 Emitter to base voltage VEBO IE = 100µA, IC = 0 4 20 Forward current transfer ratio hFE VCB = 10V, IE = –10mA VCE(sat) IC = 20mA, IB = 2mA Transition frequency fT VCB = 10V, IE = –10mA, f = 100MHz Common emitter reverse transfer capacitance Cre VCE = 10V, IC = 1mA, f = 10.7MHz Power gain PG VCB = 10V, IE = –10mA, f = 58MHz max Unit 100 nA 50 VCBO Collector to emitter saturation voltage typ V 60 45 V 60 V 100 0.4 300 22 V MHz 1.5 pF 30 dB 1 2SC1360, 2SC1360A Transistor PC — Ta IC — VCE 1.2 IC — VBE 80 60 VCE=10V 0.8 0.6 0.4 60 1.6mA 50 1.4mA 1.2mA 40 1.0mA 30 0.8mA 0.6mA 20 0.4mA 0.2 10 0 40 60 80 100 120 140 160 2 4 10 3 1 Ta=75˚C 0.1 –25˚C 0.03 1 3 10 30 Ta=75˚C 60 25˚C –25˚C 40 20 0.3 1 3 10 30 10 200 100 –2.4 30 100 Collector to base voltage VCB (V) –3 –10 30 IC=1mA f=10.7MHz Ta=25˚C –2.0 –1 –30 –100 PG — IE –1.6 –1.2 – 0.4 0 2.0 Emitter current IE (mA) – 0.8 0.5 1.6 300 0 – 0.1 – 0.3 100 VCB=10V f=58MHz Ta=25˚C 25 Power gain PG (dB) Common emitter reverse transfer capacitance Cre (pF) Collector output capacitance Cob (pF) 1.0 1.2 400 Cre — VCE 1.5 0.8 500 Collector current IC (mA) 2.0 3 0.4 Base to emitter voltage VBE (V) VCB=10V Ta=25˚C 80 0 0.1 100 IE=0 f=1MHz Ta=25˚C 1 0 fT — I E 100 Cob — VCB 2.5 10 600 Collector current IC (mA) 3.0 8 VCE=10V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 30 0.3 6 120 IC/IB=10 0.01 0.1 20 hFE — IC 100 25˚C 30 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.3 40 0 0 Ambient temperature Ta (˚C) –25˚C 10 Transition frequency fT (MHz) 20 Ta=75˚C 0.2mA 0 0 2 50 Collector current IC (mA) IB=2.0mA 1.8mA 1.0 Collector current IC (mA) Collector power dissipation PC (W) 25˚C 70 20 15 10 5 0 1 3 10 30 100 Collector to emitter voltage VCE (V) 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) –100