PANASONIC 2SB873

Transistor
2SB873
Silicon PNP epitaxial planer type
For low-frequency power amplification
For DC-DC converter
For stroboscope
Unit: mm
4.9±0.2
8.6±0.2
5.9±0.2
■ Features
Low collector to emitter saturation voltage VCE(sat).
Large collector current IC.
0.7±0.1
+0.3
●
0.7–0.2
●
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–30
V
Collector to emitter voltage
VCEO
–20
V
Emitter to base voltage
VEBO
–7
V
Peak collector current
ICP
–10
A
+0.2
IC
–5
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
0.45–0.1
1.27
1
Collector current
+0.2
0.45–0.1
1.27
2
3
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
3.2
■ Absolute Maximum Ratings
13.5±0.5
2.54±0.15
(Ta=25˚C)
Symbol
Parameter
Conditions
min
Collector cutoff current
ICBO
VCB = –10V, IE = 0
Emitter cutoff current
IEBO
VEB = –5V, IC = 0
Collector to emitter voltage
VCEO
IC = –1mA, IB = 0
–20
Emitter to base voltage
VEBO
IE = –10µA, IC = 0
–7
Forward current transfer ratio
hFE*1
VCE = –2V, IC = –2A*2
90
Collector to emitter saturation voltage
VCE(sat)
IC = –3A, IB = –0.1A*2
Transition frequency
fT
VCB = –6V, IE = 50mA, f = 200MHz
Collector output capacitance
Cob
VCB = –20V, IE = 0, f = 1MHz
typ
FE
Unit
nA
–100
nA
V
V
625
–1
120
V
MHz
85
*2
*1h
max
–100
pF
Pulse measurement
Rank classification
Rank
P
Q
R
hFE
90 ~ 135
120 ~ 205
180 ~ 625
1
2SB873
Transistor
PC — Ta
IC — VCE
1.2
IC — VBE
–6
–12
VCE=–2V
–5
0.8
0.6
0.4
0.2
–25mA
–4
–20mA
–15mA
–3
–10mA
–2
–5mA
–25˚C
–6
–4
–2
0
40
60
80 100 120 140 160
0
0
–2
–4
–12
–10
–3
–1
Ta=75˚C
25˚C
–25˚C
– 0.1
– 0.03
–1
–3
25˚C
400
–25˚C
300
200
100
Cob — VCB
–3
–10
120
100
80
–10
–3
Single pulse
Ta=25˚C
ICP
IC
t=10ms
t=1s
–1
– 0.3
60
– 0.1
40
– 0.03
20
–10
–30
–100
Collector to base voltage VCB (V)
– 0.01
– 0.1 – 0.3
–1
–3
200
160
120
80
40
–10
–30
1
3
10
30
Emitter current IE (mA)
–30
Collector current IC (A)
140
–2.0
0
–1
Area of safe operation (ASO)
–100
IE=0
f=1MHz
Ta=25˚C
–1.6
VCB=–6V
Ta=25˚C
Ta=75˚C
Collector current IC (A)
160
–1.2
240
0
– 0.01 – 0.03 – 0.1 – 0.3
–10
200
– 0.8
fT — I E
500
Collector current IC (A)
–3
– 0.4
Base to emitter voltage VBE (V)
VCE=–2V
Forward current transfer ratio hFE
–30
0
–1
0
600
IC/IB=30
180
–10
hFE — IC
–100
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–8
Collector to emitter voltage VCE (V)
VCE(sat) — IC
– 0.3
–6
Transition frequency fT (MHz)
20
Ambient temperature Ta (˚C)
Collector to emitter saturation voltage VCE(sat) (V)
Ta=75˚C
–8
–1mA
0
Collector output capacitance Cob (pF)
25˚C
–10
–30mA
–1
0
2
–35mA
Collector current IC (A)
1.0
Collector current IC (A)
Collector power dissipation PC (W)
Ta=25˚C
IB=–40mA
–100
Collector to emitter voltage VCE (V)
100