isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2481 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V(Min) ·High Current Capability ·High Collector Power Dissipation ·Complement to Type 2SA1021 APPLICATIONS ·Color TV vertical deflection output applications. ·Color TV class B sound output applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER s c s .i VALUE ww VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w UNIT 150 V 150 V 6 V IC Collector Current-Continuous 1.5 A IB Base Current-Continuous 1.0 A Collector Power Dissipation @ TC=25℃ 20 B PC TJ Tstg W Collector Power Dissipation @ Ta=25℃ 1.2 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2481 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 1.5 V VBE(on) Base-Emitter On Voltage IC= 5mA; VCE= 5V 0.8 V ICBO Collector Cutoff Current VCB= 150V; IE= 0 1.0 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1.0 μA hFE DC Current Gain IC= 0.2A; VCE= 5V fT COB CONDITIONS w w Output Capacitance hFE Classifications R O 60-120 100-200 Y IC= 0.2A; VCE= 5V IE= 0; VCB= 10V, ftest= 1MHz 160-320 isc Website：www.iscsemi.cn 2 TYP. MAX 150 n c . i m e s c s i . w Current-Gain—Bandwidth Product MIN V 60 20 UNIT 320 100 MHz 13 pF