Inchange Semiconductor Product Specification 2SC2964 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V 15 A 150 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2964 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞ 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 600 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=10A; IB=2A 1.5 V VBE(sat) Base-emitter saturation voltage IC=10A; IB=2A 1.5 V ICBO Collector cut-off current VCB=500V ;IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE DC current gain IC=10A ; VCE=5V Transition frequency IC=2A ; VCE=10V 28 MHz Collector output capacitance IE=0 ; VCB=10V,f=1MHz 230 pF fT COB CONDITIONS 2 MIN TYP. 7 MAX UNIT 20 Inchange Semiconductor Product Specification 2SC2964 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3