P4C188/188L P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply (P4C188L Military) Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved) – 22-Pin 300 mil DIP – 24-Pin 300 mil SOJ – 22-Pin 290 x 490 mil LCC Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 (Industrial) – 15/20/25/35/45 ns (Military) Low Power (Commercial/Military) – 715 mW Active – 12/15 – 550/660 mW Active – 20/25/35/45 – 193/220 mW Standby (TTL Input) – 83/110 mW Standby (CMOS Input) P4C188 – 15 mW Standby (CMOS Input) (P4C188L Military) DESCRIPTION The P4C188 and P4C188L are 65,536-bit ultra high speed static RAMs organized as 16K x 4. The CMOS memories require no clocks or refreshing and have equal access and cycle times. Inputs and outputs are fully TTL-compatible. The RAMs operate from a single 5V±10% tolerance power supply. With battery backup, data integrity is maintained for supply voltages down to 2.0V. Current drain is typically 10 µA from a 2.0V supply. Access times as fast as 12 nanoseconds are available, permitting greatly enhanced system speeds. CMOS is utilized to reduce power consumption to a low 715mW active, 193mW standby and only 5mW in the P4C188L version. FUNCTIONAL BLOCK DIAGRAM PIN CONFIGURATIONS INPUT DATA CONTROL COLUMN I/O COLUMN SELECT A 13 A2 3 A2 3 20 A 12 A3 4 A3 4 19 A 11 A4 A4 5 18 A 10 A5 6 17 A6 7 16 A7 8 15 A8 9 14 CE 10 13 I/O 1 GND 11 12 WE DIP (P3, D3) TOP VIEW CE A V CC 21 A 21 2 22 20 A 12 19 A 11 5 18 A5 6 17 A 10 A9 A9 A6 7 16 I/O 4 I/O 4 A7 8 15 I/O 3 I/O 3 A8 9 14 I/O 2 I/O 2 1 11 12 10 13 WE I/O 3 I/O 4 22 2 I/O 1 I/O 1 I/O 2 1 A1 CE A A0 GND 65,536-BIT MEMORY ARRAY ROW SELECT (8) A 13 A V CC A1 A0 The P4C188 and P4C188L are available in 22-pin 300 mil DIP, 24-pin 300 mil SOJ and 22-pin LCC packages providing excellent board level densities. LCC (L3) TOP VIEW For SOJ pin configuration, please see Selection Guide Page. (6) WE Means Quality, Service and Speed 1Q97 63 P4C188/188L MAXIMUM RATINGS(1) Symbol Parameter Value Unit VCC Power Supply Pin with Respect to GND –0.5 to +7 V VTERM Terminal Voltage with Respect to GND (up to 7.0V) –0.5 to VCC +0.5 V TA Operating Temperature –55 to +125 °C Symbol Ambient Temperature GND VCC 0V 0V 0V 5.0V ± 10% 5.0V ± 10% 5.0V ± 10% Military –55°C to +125°C –40°C to +85°C Industrial 0°C to +70°C Commercial Value Unit TBIAS Temperature Under Bias –55 to +125 °C TSTG Storage Temperature –65 to +150 °C PT Power Dissipation 1.0 W IOUT DC Output Current 50 mA CAPACITANCES(4) RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE Grade(2) Parameter VCC = 5.0V, TA = 25°C, f = 1.0MHz Symbol Parameter Conditions Typ. Unit CIN Input Capacitance VIN = 0V 5 pF COUT Output Capacitance VOUT = 0V 7 pF DC ELECTRICAL CHARACTERISTICS Over recommended operating temperature and supply voltage(2) Symbol Parameter VIH Input High Voltage VIL Input Low Voltage VHC CMOS Input High Voltage VLC CMOS Input Low Voltage VCD Input Clamp Diode Voltage VCC = Min., IIN = 18 mA VOL Output Low Voltage (TTL Load) Output High Voltage (TTL Load) Input Leakage Current VOH ILI –0.5(3) Output Leakage Current 0.8 P4C188L Unit Min Max 2.2 VCC +0.5 V –0.5(3) 0.8 VCC –0.2 VCC +0.5 VCC –0.2 VCC +0.5 (3) –0.5 IOL = +8 mA, VCC = Min. IOH = –4 mA, VCC = Min. VCC = Max. Com’l. VCC = Max., CE = VIH, VOUT = GND to VCC 0.2 Mil. Com’l. –0.5(3) V V 0.2 V –1.2 –1.2 V 0.4 0.4 V 2.4 Mil. VIN = GND to VCC ILO P4C188 Min Max 2.2 VCC +0.5 Test Conditions 2.4 V –10 –5 +10 +5 –5 n/a +5 n/a µA –10 –5 +10 +5 –5 n/a +5 n/a µA ISB Standby Power Supply CE ≥ VIH Mil. Current (TTL Input Levels) VCC = Max ., Ind./Com’l. f = Max., Outputs Open ___ ___ 40 35 ___ ___ 40 n/a mA ISB1 Standby Power Supply Current (CMOS Input Levels) CE ≥ VHC Mil. VCC = Max., Ind./Com’l. f = 0, Outputs Open VIN ≤ VLC or VIN ≥ VHC ___ ___ 20 15 ___ ___ 2.7 n/a mA n/a = Not Applicable Notes: 1. Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to MAXIMUM rating conditions for extended periods may affect reliability. 2. Extended temperature operation guaranteed with 400 linear feet per minute of air flow. 3. Transient inputs with VIL and IIL not more negative than –3.0V and –100mA, respectively, are permissible for pulse widths up to 20 ns. 4. This parameter is sampled and not 100% tested. 64 P4C188/188L POWER DISSIPATION CHARACTERISTICS VS. SPEED Symbol ICC Temperature Range Parameter Dynamic Operating Current* Unit –10 –12 –15 –20 –25 –35 –45 Commercial 180 170 160 155 150 N/A N/A mA Industrial N/A 180 170 160 155 150 N/A mA Military N/A N/A 170 160 155 150 145 mA *VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL DATA RETENTION CHARACTERISTICS (P4C188L Military Temperature Only) Symbol Parameter Test Conditions VDR VCC for Data Retention ICCDR Data Retention Current tCDR Chip Deselect to Data Retention Time t R† Operation Recovery Time Min Typ.* VCC = 2.0V 3.0V Max VCC = 2.0V 3.0V 2.0 CE ≥ VCC –0.2V, VIN ≥ VCC –0.2V or VIN ≤ 0.2V V 10 15 600 tRC§ ns tRC = Read Cycle Time This parameter is guaranteed but not tested. DATA RETENTION WAVEFORM DATA RETENTION MODE 4.5V VDR ≥ 2V t CDR 4.5V tR VDR CE VIH VIH 65 µA ns § VCC 900 0 *TA = +125°C † Unit P4C188/188L AC CHARACTERISTICS—READ CYCLE (VCC = 5V ± 10%, All Temperature Ranges)(2) Sym. -10 Parameter -12 -15 -20 -25 -35 -45 Unit Min Max Min Max Min Max Min Max Min Max Min Max Min Max tRC Read Cycle Time 10 tAA Address Access Time 10 12 15 20 25 35 45 ns tAC Chip Enable Access Time 10 12 15 20 25 35 45 ns tOH Output Hold from Address Change 2 2 2 2 2 2 2 ns tLZ Chip Enable to Output in Low Z 2 2 2 3 3 3 3 ns tHZ Chip Disable to Output in High Z tPU Chip Enable to Power Up Time tPD Chip Disable to Power Down Time 12 5 0 15 6 6 0 10 20 0 12 25 35 8 0 10 0 20 25 ns 25 0 0 20 15 45 35 ns ns 45 ns TIMING WAVEFORM OF READ CYCLE NO. 1(5) (8) t RC ADDRESS t AA t OH PREVIOUS DATA VALID DATA OUT DATA VALID TIMING WAVEFORM OF READ CYCLE NO. 2(6) tRC CE (7) t HZ t AC (7) t LZ DATA VALID DATA OUT t PU VCC SUPPLY CURRENT HIGH IMPEDANCE t PD I CC I SB Notes: 5. CE is LOW and WE is HIGH for READ cycle. 6. WE is HIGH, and address must be valid prior to or coincident with CE transition LOW. 7. Transition is measured ±200mV from steady state voltage prior to change with specified loading in Figure 1. This parameter is sampled and not 100% tested. 8. Read Cycle Time is measured from the last valid address to the first transitioning address. 66 P4C188/188L AC CHARACTERISTICS - WRITE CYCLE (VCC = 5V ± 10%, All Temperature Ranges)(2) Sym. Parameter -12 -10 -15 -20 -25 -35 -45 Min Max Min Max Min Max Min Max Min Max Min Max Min Max Unit tWC Write Cycle Time 10 12 13 20 25 35 45 ns tCW Chip Enable Time to End of Write 7 8 10 13 15 25 35 ns tAW Address Valid to End of Write 7 8 10 15 20 25 35 ns tAS Address Set-up Time 0 0 0 0 0 0 0 ns tWP Write Pulse Width 8 9 10 13 15 25 35 ns tAH Address Hold Time from End of Write 0 0 0 0 0 0 0 ns tDW Data Valid to End of Write 5 6 7 8 10 15 20 ns tDH Data Hold Time 0 0 0 0 0 0 5 ns tWZ Write Enable to Ourput in High Z tDW Output Active from End of Write 5 6 2 2 2 10 8 6 2 20 15 2 3 3 ns ns WE CONTROLLED) (9) TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE t WC (11) ADDRESS t CW CE t AW t WR t AH t WP WE t AS t DW DATA IN DATA VALID t OW(10, 12) (12) t WZ DATA OUT t DH DATA UNDEFINED HIGH IMPEDANCE Notes: 9. CE and WE must be LOW for WRITE cycle. 10. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high impedance state. 11. Write Cycle Time is measured from the last valid address to the first transition address. 12. Transition is measured ±200mV from steady state voltage prior to change with specified loading in Figure 1. This parameter is sampled and not 100% tested. 67 P4C188/188L CE CONTROLLED)(9) TIMING WAVEFORM OF WRITE CYCLE NO. 2 (CE t WC (11) ADDRESS t AS t CW CE t AH t WR t AW t WP WE t DW DATA IN t DH DATA VALID DATA OUT HIGH IMPEDANCE AC TEST CONDITIONS Input Pulse Levels TRUTH TABLE Mode GND to 3.0V CE WE Output Power Standby Input Rise and Fall Times 3ns Standby H X High Z Input Timing Reference Level 1.5V Read L H DOUT Active Output Timing Reference Level 1.5V Write L L DIN Active Output Load See Figures 1 and 2 +5V R TH = 166.5 Ω 480Ω D OUT DOUT 255Ω 30pF* (5pF** for t HZ, ,t t LZ 30pF* (5pF ,, HZ LZ VTH = 1.73 V 30pF* (5pF* for t HZ , t LZ , t WZ and t OW ) ttWZ ) ) andtOW t OW WZand Figure 2. Thevenin Equivalent Figure 1. Output Load * including scope and test fixture. Note: Because of the ultra-high speed of the P4C188/L, care must be taken when testing this device; an inadequate setup can cause a normal functioning part to be rejected as faulty. Long high-inductance leads that cause supply bounce must be avoided by bringing the VCC and ground planes directly up to the contactor fingers. A 0.01 µF high frequency capacitor is also required between VCC and ground. To avoid signal reflections, proper termination must be used; for example, a 50Ω test environment should be terminated into a 50Ω load with 1.73V (Thevenin Voltage) at the comparator input, and a 116Ω resistor must be used in series with DOUT to match 166Ω (Thevenin Resistance). 68 P4C188/188L PACKAGE SUFFIX Package Suffix TEMPERATURE RANGE SUFFIX Temperature Range Suffix Description P J L D Plastic DIP, 300 mil wide standard Plastic SOJ, 300 mil wide standard Leadless Chip Carrier (ceramic) CERDIP, 300 mil wide standard C I M MB Description Commercial Temperature Range, 0°C to +70°C. Industrial Temperature Range, –45°C to +85°C. Military Temperature Range, –55°C to +125°C. Mil. Temp. with MIL-STD-883D Class B compliance ORDERING INFORMATION The following part numbering scheme is used for the P4C188: P4C 188 l — ss p t Temperature Range Package Code Speed (Access/Cycle Time) 1513 10 Low Power Designator: Blank = None, L = Low Power Device Number Static RAM Prefix I = Ultra-low standby power designator L, if needed. ss = Speed (access/cycle time in ns), e.g., 25, 35 p = Package code, i.e., P, J, D, L. t = Temperature range, i.e., C, M, MB. The P4C188 is also available per SMD 5962-89692 and 5962-86859 69 P4C188/188L SELECTION GUIDE The P4C188/L is available in the following temperature, speed and package options. The P4C188L is only available over the Military Temperature range. Temperature Range Commercial Industrial Speed (ns) Package Plastic DIP Plastic SOJ Plastic DIP Plastic SOJ –10PC –10JC N/A N/A 10 12 –12PC –12JC –12PI –12JI 15 –15PC –15JC –15PI –15JI 20 –20PC –20JC –20PI –20JI 25 –25PC –25JC –25PI –25JI 35 N/A N/A –35PI –35JI 45 N/A N/A N/A N/A –20DM –20LM –25DM –25LM –35DM –35LM –45DM –45LM Military Temp. CERDIP LCC N/A N/A N/A N/A –15DM –15LM Military Processed* CERDIP LCC N/A N/A N/A N/A –15DMB –20DMB –25DMB –35DMB –45DMB –15LMB –20LMB –25LMB –35LMB –45LMB * Military temperature range with MIL-STD-883, Class B processing. N/A = Not available SOJ PIN CONFIGURATION A0 A1 1 24 V CC 2 23 A2 A3 3 22 A 13 A 12 4 21 A4 A5 5 20 6 19 A6 A7 7 18 A9 NC 8 17 I/O4 A8 9 16 I/O3 CE NC 10 15 I/O2 11 14 I/O1 GND 12 13 WE SOJ (J4) TOP VIEW 70 A 11 A 10