isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1069 DESCRIPTION ·High Collector Current Capability ·High Collector Power Dissipation Capability ·Built-in Damper Diode APPLICATIONS ·TV horizontal deflection output applications. ·High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A Base Current-Continuous 2 A IB B Collector Power Dissipation Ta=25℃ 1.75 PC Tj Tstg W Collector Power Dissipation TC=25℃ 40 Junction Temperature 150 ℃ -55~150 ℃ Storage Ttemperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1069 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 50mH 150 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 300 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1A; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.5 V ICES Collector Cutoff Current VCE= 250V; VBE= 0 1 mA hFE DC Current Gain IC= 5A ; VCE= 1.5V Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V C-E Diode Forward Voltage IF= 6A 1.8 V Fall Time ICP= 5A; IB1(end)= 0.5A 1.0 μs fT VECF tf isc Website：www.iscsemi.cn CONDITIONS MIN TYP. B B MAX UNIT 10 18 MHz