Power Transistors 2SD1257, 2SD1257A Silicon NPN epitaxial planar type For power switching Complementary to 2SB0934 (2SB934) V 100 Emitter to base voltage VEBO 7 V Peak collector current ICP 15 A Collector current IC 7 A Collector power TC=25°C dissipation Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C Symbol VCB = 100V, IE = 0 Emitter cutoff current IEBO VEB = 5V, IC = 0 2SD1257A Forward current transfer ratio 10.0±0.3 1.5±0.1 1 2 min 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 hFE1 VCE = 2V, IC = 0.1A 45 VCE = 2V, IC = 3A 60 hFE2 * IC = 5A, IB = 0.25A Base to emitter saturation voltage VBE(sat) IC = 5A, IB = 0.25A Transition frequency fT VCE = 10V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf IC = 3A, IB1 = 0.3A, IB2 = – 0.3A, VCC = 50V typ max Unit 10 µA 50 µA 80 IC = 10mA, IB = 0 VCE(sat) FE2 0 to 0.4 5.08±0.5 VCEO Collector to emitter saturation voltage *h 2.0 10.5min. Conditions ICBO voltage R0.5 R0.5 (TC=25˚C) Parameter 2SD1257 1.0±0.1 0.8±0.1 W Collector cutoff current Collector to emitter 6.0±0.3 1.1 max. 1.3 ■ Electrical Characteristics 3.4±0.3 2.54±0.3 40 PC Ta=25°C 8.5±0.2 14.7±0.5 80 VCEO emitter voltage 2SD1257A Unit: mm V 150 +0.4 2SD1257 Unit 130 VCBO 1:Base 2:Collector 3:Emitter N Type Package 3 3.0–0.2 Collector to Ratings 2 4.4±0.5 2SD1257A 1 +0 base voltage 0.5max. 2.54±0.3 (TC=25˚C) Symbol 2SD1257 0.8±0.1 1.5–0.4 Parameter 1.1max. 5.08±0.5 ■ Absolute Maximum Ratings Collector to 1.5max. 10.0±0.3 ● 1.0±0.1 2.0 ● Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 4.4±0.5 ● Unit: mm 6.0±0.5 ■ Features ● 3.4±0.3 8.5±0.2 V 100 260 0.5 1.5 V V 30 MHz 0.5 µs 1.5 µs 0.1 µs Rank classification Rank R Q P hFE2 60 to 120 90 to 180 130 to 260 Note)The part numbers in the parenthesis show conventional part number. 1 Power Transistors 2SD1257, 2SD1257A IC — VCE (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) (1) 40 30 20 TC=25˚C Collector current IC (A) Collector power dissipation PC (W) VCE(sat) — IC 10 10 8 IB=55mA 50mA 45mA 40mA 6 35mA 30mA 4 20mA 15mA 2 10mA (2) 5mA (3) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 6 8 3 1 (2) (1) 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) VBE(sat) — IC VBE(sat) — IC 10 3 1 TC=100˚C 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.01 0.03 0.1 0.3 1 3 (1) IC/IB=10 (2) IC/IB=20 TC=25˚C 10 3 (1) (2) 1 0.3 0.1 0.03 0.01 0.1 10 Base to emitter saturation voltage VBE(sat) (V) IC/IB=20 30 Base to emitter saturation voltage VBE(sat) (V) 100 0.3 1 3 10 hFE — IC TC=–25˚C 1 100˚C 0.3 25˚C 0.1 0.03 Transition frequency fT (MHz) Collector output capacitance Cob (pF) VCE=10V f=10MHz TC=25˚C TC=100˚C 25˚C 100 –25˚C 30 10 3 3 Collector current IC (A) 10 3 10 IE=0 f=1MHz TC=25˚C 1000 300 100 30 10 3 1 1 3000 1000 300 0.3 Cob — VCB 3000 1000 0.1 Collector current IC (A) 10000 VCE=2V 0.3 3 fT — IC 3000 0.1 10 0.01 0.01 0.03 30 10000 1 0.01 0.03 IC/IB=20 30 Collector current IC (A) 10000 Forward current transfer ratio hFE 12 100 Collector current IC (A) 2 10 (1) IC/IB=10 (2) IC/IB=20 TC=25˚C 10 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 4 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 50 1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 10 300 100 30 10 3 1 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Power Transistors 2SD1257, 2SD1257A ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=10(IB1=–IB2) VCC=50V TC=25˚C 3 tstg 1 ton 0.3 tf 0.1 ICP t=0.5ms 10 IC 3 10ms 300ms 1 1ms 0.3 0.1 0.03 2SD1257 10 Non repetitive pulse TC=25˚C 30 Collector current IC (A) 30 Switching time ton,tstg,tf (µs) Area of safe operation (ASO) 100 0.03 0.01 0.01 0 1 2 3 4 5 6 7 8 1 Collector current IC (A) 3 10 30 2SD1257A 100 100 300 1000 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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