PC3Q66Q PC3Q66Q Mini-flat Package, High Collector-Emitter Voltage Type Half Pitch Photocoupler ■ Features ■ Outline Dimensions 1. High collector-emitter voltage ( VCEO : 80V) 2. Half pitch type ( lead pitch : 1.27mm ) 10.3 ± 0.3 1.27 ± 0.25 Model No. 9 4.4 ± 0.2 16 3. Isolation voltage between input and output ( Viso : 2 500V rms ) 4. Applicable to infrared ray reflow ( 230˚C for MAX. 30seconds ) 5. High reliability Primary side mark 0.4 ± 0.1 8 C0.4 1 0.2 ± 0.05 1. Programmable controllers ■ Package Specifications 5.3 ± 0.3 Epoxy resin 0.1 ± 0.1 2.6 ± 0.2 ■ Applications Model No. ( Unit : mm ) 0.5 +- 0.4 0.2 7.0 +- 0.2 0.7 6˚ Package specifications Internal connection diagram PC3Q66Q Taping reel diameter 330mm ( 1 000pcs. ) 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 1 3 5 7 Anode 2 4 6 8 Cathode 9 11 13 15 Emitter 10 12 14 16 ■ Absolute Maximum Ratings Output ( Ta = 25˚C ) Symbol IF I FM VR P V CEO V ECO IC PC P tot V iso T opr T stg T sol Rating 50 1 6 70 80 6 50 150 170 2.5 - 30 to + 100 - 40 to + 125 260 Unit mA A V mW V V mA mW mW kV rms ˚C ˚C ˚C 0.2mm or more Input Parameter Forward current *1 Peak forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Total power dissipation *2 Isolation voltage Operating temperature Storage temperature *3 Soldering temperature Collector Soldering area *1 Pulse width <=100 µs, Duty ratio : 0.001 *2 AC for 1 min., 40 to 60% RH, f = 60Hz *3 For 10seconds “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” PC3Q66Q ■ Electro-optical Characteristics Input Output Transfer characteristics Parameter Forward current Reverse current Terminal capacitance Collector dark current Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector current Collector-emitter saturation voltage Isolation resistance Floating capacitance Rise time Response time Fall time ( Ta = 25˚C ) Symbol VF IR Ct I CEO BV CEO BV ECO IC V CE(sat) R ISO Cf tr tf Fig. 1 Forward Current vs. Ambient Temperature Conditions I F = 20mA V R = 4V V = 0, f = 1kH Z V CE = 20V, I F = 0 I C = 0.1mA, I F = 0 I E = 10 µ A, I F = 0 I F = 1mA, V CE = 5V I F = 20mA, I C = 1mA DC500V 40 to 60% RH V = 0, f = 1 MH Z V CE = 2V, I C = 2mA R L = 100 Ω MIN. 80 6 1 5 x 1010 - TYP. 1.2 30 0.1 1011 0.6 6 8 MAX. 1.4 10 250 100 4 0.2 1.0 - Fig. 2 Diode Power Dissipation vs. Ambient Temperature Diode power dissipation P ( mW ) 60 Forward current I F ( mA ) 50 40 30 20 10 0 - 30 80 70 60 40 20 0 25 5055 Ambient temperature T 75 a 100 0 - 30 125 0 ( ˚C ) 50 55 100 Ambient temperature T a ( ˚C ) Fig. 4 Power Dissipation vs. Ambient Temperature Fig. 3 Collector Power Dissipation vs. Ambient Temperature 300 Power dissipation P tot ( mW ) 200 Collector power dissipation P C ( mW ) 100 150 100 50 250 200 170 150 100 50 0 - 30 0 25 50 75 Ambient temperature T a 100 ( ˚C ) 125 0 - 30 0 25 50 75 100 Ambient temperature T a ( ˚C ) Unit V µA pF nA V V mA V Ω pF µs µs PC3Q66Q Fig. 5 Peak Forward Current vs. Duty Ratio 10000 100 Pulse width <=100µ s 5000 T a = 25˚C 25˚C 50 2000 Forward current I F ( mA ) Peak forward current I FM ( mA ) Fig. 6 Forward Current vs. Forward Voltage 1000 500 200 100 50 20 50˚C 0˚C 20 - 25˚C 75˚C 10 5 2 10 5 5 10 -3 2 5 5 10 - 2 2 Duty ratio 10 -1 2 5 1 0.0 1 0.5 1.0 1.5 2.0 Forward voltage V F ( V ) 2.5 3.0 Fig. 8 Collector Current vs. Collector -emitter Voltage Fig. 7 Current Tranfer Ratio vs. Forward Current 500 VCE = 5V Collector current I C ( mA ) Current tranfer ratio CTR ( % ) 400 300 200 T a = 25˚C Pc (max) 50 I F = 30mA 20mA T a = 25˚C 40 10mA 30 20 100 10 0 0 5mA 1mA 1 10 Forward current I 0 100 F ( mA ) Fig. 9 Relative Current Transfer Ratio vs. Ambient Temperature 4 6 8 10 Fig.10 Collector-emitter Saturation Voltage vs. Ambient Temperature 150 0.16 I F = 1mA 0.14 VCE = 5V Collector-emitter saturation voltage V CE(sat) ( V ) Relative current transfer ratio ( % ) 2 Collector-emitter voltage V CE ( V ) 100 50 I F = 20mA I C = 1mA 0.12 0.10 0.08 0.06 0.04 0.02 0 - 30 0 20 40 60 Ambient temperature T a ( ˚C ) 80 100 0.00 - 30 0 20 40 Ambient temperature T 60 a ( ˚C ) 80 100 PC3Q66Q Fig.12 Response Time vs. Load Resistance Fig.11 Collector Dark Current vs. Ambient Temperature -5 10 500 200 5 10 5 -8 10 -9 5 5 10 - 10 10 - 11 5 0 - 30 20 40 80 60 Ambient temperature T a 100 T a = 25˚C 10 I C = 0.5mA 8 1mA 3mA 6 5mA 7mA 4 2 0 0 2 4 Forward current I 6 F 50 20 10 tf tr 5 2 td ts 1 0.5 0.2 0.1 0.01 0.1 1 Load resistance RL ( k Ω ) ( ˚C ) Fig.13 Collector-emitter Saturation Voltage vs. Forward Current Collector-emitter saturation voltage V CE ( sat ) ( V) T a = 25˚C 100 -7 10 VCE = 2V I C = 2mA -6 Response time ( µ s ) Collector dark current I CEO ( A) 10 1000 VCE = 20V 5 8 10 ( mA ) ● Please refer to the chapter “ Precautions for Use ” 10