Power Transistors 2SD1747, 2SD1747A Silicon NPN epitaxial planar type For power switching Complementary to 2SB1177 Unit: mm 7.0±0.3 ● +0.3 0.8±0.2 1.1±0.1 1.0±0.2 ● Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0 –0. ● 7.2±0.3 ■ Features ● 3.5±0.2 3.0±0.2 0.85±0.1 0.75±0.1 0.4±0.1 2.3±0.2 4.6±0.4 80 VCEO emitter voltage 2SD1747A 100 V Emitter to base voltage VEBO 7 V Peak collector current ICP 15 A Collector current IC 7 A Collector power TC=25°C dissipation 15 PC Ta=25°C Junction temperature Tj Storage temperature Tstg W 1.3 2.0±0.2 150 ˚C –55 to +150 ˚C 0 to 0.15 3.0±0.2 2.5 0.75±0.1 0.5 max. 1.1±0.1 1 0.9±0.1 0 to 0.15 2 3 2.3±0.2 4.6±0.4 ■ Electrical Characteristics Unit: mm 1.0 2SD1747 150 3.5±0.2 7.0±0.3 V 2.5±0.2 Collector to VCBO Unit 1.0 2SD1747A 130 2.5±0.2 base voltage Ratings 1:Base 2:Collector 3:Emitter I Type Package 3 1.0 max. Symbol 2SD1747 2 7.2±0.3 Parameter Collector to (TC=25˚C) 10.2±0.3 ■ Absolute Maximum Ratings 1 1:Base 2:Collector 3:Emitter I Type Package (Y) (TC=25˚C) Symbol Parameter Conditions min typ max Unit Collector cutoff current ICBO VCB = 100V, IE = 0 10 µA Emitter cutoff current IEBO VEB = 5V, IC = 0 50 µA VCEO IC = 10mA, IB = 0 hFE1 VCE = 2V, IC = 0.1A 45 hFE2* VCE = 2V, IC = 3A 90 Collector to emitter saturation voltage VCE(sat) IC = 5A, IB = 0.25A 0.5 V Base to emitter saturation voltage VBE(sat) IC = 5A, IB = 0.25A 1.5 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf Collector to emitter 2SD1747 voltage 2SD1747A Forward current transfer ratio *h FE2 IC = 3A, IB1 = 0.3A, IB2 = – 0.3A, VCC = 50V 80 V 100 260 30 MHz 0.5 µs 1.5 µs 0.1 µs Rank classification Rank Q P hFE2 90 to 180 130 to 260 1 Power Transistors 2SD1747, 2SD1747A IC — VCE Collector current IC (A) 15 (1) 10 5 8 IB=55mA 50mA 45mA 40mA 6 35mA 30mA 4 20mA 15mA 2 10mA 5mA (2) 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 3 1 (2) (1) 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 30 Collector current IC (A) VBE(sat) — IC VBE(sat) — IC IC/IB=20 30 10 3 1 TC=100˚C 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.01 0.03 0.1 0.3 1 3 3 (1) (2) 1 0.3 0.1 0.03 0.01 0.1 10 (1) IC/IB=10 (2) IC/IB=20 TC=25˚C 10 0.3 1 3 10 hFE — IC 3 TC=–25˚C 1 100˚C 0.3 25˚C 0.1 0.03 VCE=10V f=10MHz TC=25˚C Transition frequency fT (MHz) 30 10 3 3 Collector current IC (A) 10 10 1000 300 100 30 10 3 1 3 IE=0 f=1MHz TC=25˚C 3000 1000 TC=100˚C 25˚C 100 –25˚C 1 Cob — VCB 3000 300 0.3 10000 VCE=2V 1000 0.1 Collector current IC (A) fT — IC 3000 0.3 10 0.01 0.01 0.03 30 10000 0.1 IC/IB=20 30 Collector current IC (A) 10000 1 0.01 0.03 Base to emitter saturation voltage VBE(sat) (V) 100 Base to emitter saturation voltage VBE(sat) (V) 100 Collector current IC (A) Forward current transfer ratio hFE 12 (1) IC/IB=10 (2) IC/IB=20 TC=25˚C 10 Collector to emitter voltage VCE (V) VCE(sat) — IC 2 10 Collector output capacitance Cob (pF) Collector power dissipation PC (W) TC=25˚C (1) TC=Ta (2) Without heat sink (PC=1.3W) 0 Collector to emitter saturation voltage VCE(sat) (V) VCE(sat) — IC 10 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 20 1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 10 300 100 30 10 3 1 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Power Transistors 2SD1747, 2SD1747A ton, tstg, tf — IC Collector current IC (A) 10 3 1 tstg ton 0.3 Non repetitive pulse TC=25˚C 30 tf 0.1 0.03 ICP t=10ms 10 IC 1ms 3 1 300ms 0.3 0.1 0.03 0.01 0.01 0 1 2 3 4 5 6 7 8 1 Collector current IC (A) 3 10 30 2SD1747A Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=50V TC=25˚C 30 Switching time ton,tstg,tf (µs) Area of safe operation (ASO) 100 2SD1747 100 100 300 1000 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3