Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type Darlington Unit: mm For midium speed power switching Complementary to 2SB939 and 2SB939A 2.0 Unit: mm V 80 60 VCEO Unit 8.5±0.2 3.4±0.3 6.0±0.3 1.0±0.1 V 80 Emitter to base voltage VEBO 7 V Peak collector current ICP 12 A Collector current IC 8 A 0.8±0.1 R0.5 R0.5 0 to 0.4 2.54±0.3 Collector power TC=25°C dissipation Ta=25°C Junction temperature Tj Storage temperature Tstg 1.1 max. 45 PC 150 ˚C –55 to +150 ˚C Symbol 2SD1262 current 2SD1262A Emitter cutoff current ICBO IEBO Collector to emitter voltage Forward current transfer ratio 1 Conditions min 100 VEB = 7V, IC = 0 2 60 VCEO IC = 30mA, IB = 0 hFE1* VCE = 3V, IC = 4A 1000 500 IC = 4A, IB = 8mA Base to emitter saturation voltage VBE(sat) IC = 4A, IB = 8mA Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Internal Connection Rank classification hFE1 2 VCC = 50V Q P µA mA 10000 1.5 IC = 4A, IB1 = 8mA, IB2 = –8mA, Unit V 80 VCE = 3V, IC = 8A R max 100 VCE(sat) Rank typ VCB = 80V, IE = 0 hFE2 FE1 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 VCB = 60V, IE = 0 Collector to emitter saturation voltage *h 2 (TC=25˚C) Parameter Collector cutoff 5.08±0.5 W 1.3 ■ Electrical Characteristics 14.7±0.5 emitter voltage 2SD1262A VCBO 1:Base 2:Collector 3:Emitter N Type Package 3 +0.4 2SD1262 60 2 3.0–0.2 Collector to Ratings 1 4.4±0.5 2SD1262A 10.5min. (TC=25˚C) +0 base voltage 2.54±0.3 5.08±0.5 Symbol 2SD1262 0.5max. 1.5–0.4 Parameter Collector to 1.1max. 0.8±0.1 10.0±0.3 ■ Absolute Maximum Ratings 1.5max. 2.0 ● High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 4.4±0.5 ● 1.0±0.1 1.5±0.1 10.0±0.3 6.0±0.5 ■ Features ● 3.4±0.3 8.5±0.2 V V 20 MHz 0.5 µs 4 µs 1 µs C B 1000 to 2500 2000 to 5000 4000 to 10000 E 1 Power Transistors 2SD1262, 2SD1262A PC — Ta IC — VCE VCE(sat) — IC (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) (1) 40 30 20 Collector to emitter saturation voltage VCE(sat) (V) 12 TC=25˚C 10 Collector current IC (A) Collector power dissipation PC (W) 50 10 8 IB=4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 6 1.0mA 4 0.5mA 2 (2) (3) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 1 2 4 5 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 30 Collector current IC (A) hFE — IC TC=100˚C 25˚C 3 –25˚C 1 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 3 1 25˚C 1000 0.3 0.1 0.03 0.3 1 3 10 t=10ms IC 1ms 3 300ms 1 0.3 0.01 1 3 10 30 2SD1262A 2SD1262 0.1 0.03 100 300 Collector to emitter voltage VCE 100 30 1000 (V) 0.3 1 3 10 30 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) ICP 300 10 0.1 30 103 10 25˚C –25˚C Collector current IC (A) Non repetitive pulse TC=25˚C TC=100˚C 3000 100˚C Area of safe operation (ASO) 30 30000 10000 TC=–25˚C 0.01 0.1 30 VCE=3V IC/IB=500 10 Forward current transfer ratio hFE IC/IB=500 10 Base to emitter saturation voltage VBE(sat) (V) 100000 100 Collector current IC (A) 1 VBE(sat) — IC Collector current IC (A) 2 3 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 3 (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25˚C (3) (2) (1) 10 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 100