Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB1180 and 2SB1180A Unit: mm 7.0±0.3 base voltage 2SD1750A +0.3 2.3±0.2 4.6±0.4 (TC=25˚C) Symbol 2SD1750 Ratings 60 VCBO 0.4±0.1 1 2 1:Base 2:Collector 3:Emitter I Type Package 3 Unit V 80 7.0±0.3 3.5±0.2 2.0±0.2 2SD1750 emitter voltage 2SD1750A 60 VCEO 0 to 0.15 V 80 1.0 Collector to Unit: mm Peak collector current ICP 12 A Collector current IC 8 A 1.0 V 1.0 max. 7 7.2±0.3 VEBO 10.2±0.3 3.0±0.2 Emitter to base voltage 2.5±0.2 Parameter Collector to 0.85±0.1 0.75±0.1 2.5±0.2 ■ Absolute Maximum Ratings 1.1±0.1 1.0±0.2 ● High foward current transfer ratio hFE High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0 –0. ● 0.8±0.2 7.2±0.3 ■ Features ● 3.5±0.2 3.0±0.2 2.5 Collector power TC=25°C dissipation Ta=25°C Junction temperature –55 to +150 ■ Electrical Characteristics Symbol 2SD1750 current 2SD1750A Emitter cutoff current ICBO IEBO Collector to emitter 2SD1750 voltage 2SD1750A Forward current transfer ratio 2.3±0.2 4.6±0.4 Conditions min 100 VEB = 7V, IC = 0 2 60 IC = 30mA, IB = 0 hFE1* VCE = 3V, IC = 4A 2000 500 VCE = 3V, IC = 8A IC = 4V, IB = 8mA Base to emitter saturation voltage VBE(sat) IC = 4V, IB = 8mA Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf hFE1 Q 2 Internal Connection P µA mA 10000 1.5 IC = 4A, IB1 = 8mA, IB2 = –8mA Unit V 80 VCE(sat) Rank max 100 VCEO Rank classification typ VCB = 80V, IE = 0 hFE2 FE1 1:Base 2:Collector 3:Emitter I Type Package (Y) VCB = 60V, IE = 0 Collector to emitter saturation voltage *h 3 (TC=25˚C) Parameter Collector cutoff 2 ˚C ˚C 0.9±0.1 0 to 0.15 1 150 Tstg 0.5 max. 1.1±0.1 W 1.3 Tj Storage temperature 0.75±0.1 15 PC V V 20 MHz 0.5 µs 4 µs 1 µs C B 2000 to 5000 4000 to 10000 E 1 Power Transistors 2SD1750, 2SD1750A PC — Ta IC — VCE 10 10 5 8 IB=4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 6 1.0mA 4 0.5mA 2 (2) 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 1 2 3 4 5 3 1 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 30 Collector current IC (A) VBE(sat) — IC hFE — IC TC=100˚C 25˚C 3 –25˚C 1 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 3 1 25˚C 0.1 0.03 0.3 1 3 10 t=10ms IC 1ms 3 1 300ms 0.3 2SD1750 0.01 1 3 10 30 2SD1750A 0.1 0.03 100 300 Collector to emitter voltage VCE 300 100 30 1000 (V) 0.3 1 3 10 30 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) ICP –25˚C 10 0.1 30 103 10 25˚C 1000 0.3 Area of safe operation (ASO) Non repetitive pulse TC=25˚C TC=100˚C 3000 100˚C Collector current IC (A) 100 30 30000 10000 TC=–25˚C 0.01 0.1 30 VCE=3V IC/IB=500 10 Forward current transfer ratio hFE IC/IB=500 10 Base to emitter saturation voltage VBE(sat) (V) 100000 Collector current IC (A) Collector current IC (A) (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25˚C (3) (2) (1) 10 Collector to emitter voltage VCE (V) VCE(sat) — IC 2 Collector to emitter saturation voltage VCE(sat) (V) (1) 15 TC=25˚C (1) TC=Ta (2) Without heat sink (PC=1.3W) 0 Collector to emitter saturation voltage VCE(sat) (V) VCE(sat) — IC 12 Collector current IC (A) Collector power dissipation PC (W) 20 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–4 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 100