isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 4A ·High DC Current Gain : hFE= 2000(Min) @ IC= 4A APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Current-Pulse 12 A IB Base Current-Continuous 0.8 A B Collector Power Dissipation @ Ta=25℃ 2 PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 25 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn 2SD1928 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1928 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) CONDITIONS MIN TYP. MAX UNIT IC= 4A; IB= 4mA 1.5 V Base-Emitter Saturation Voltage IC= 4A; IB= 4mA 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 1.0 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA hFE -1 DC Current Gain IC= 4A; VCE= 2V 2000 hFE -2 DC Current Gain IC= 6A; VCE= 2V 500 B B 20000 Switching times ton Turn-on Time tstg Storage Time tf IC= 4A, IB1= -IB2= 4mA Fall Time isc Website：www.iscsemi.cn 2 0.4 μs 2.5 μs 0.5 μs