Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1417 and 2SB1417A Unit: mm ■ Features ■ Absolute Maximum Ratings Parameter (TC=25˚C) Symbol Collector to 2SD2137 base voltage 2SD2137A Collector to 2SD2137 Ratings 60 VCBO 60 emitter voltage 2SD2137A V 80 Emitter to base voltage VEBO 6 V Peak collector current ICP 5 A Collector current IC 3 A 0.35±0.1 dissipation 15 PC Ta=25°C Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics 150 ˚C –55 to +150 ˚C 0.55±0.1 C1.0 1 2 3 Symbol 2SD2137 current 2SD2137A Collector cutoff 2SD2137 current 2SD2137A Emitter cutoff current ICES ICEO IEBO Collector to emitter 2SD2137 voltage 2SD2137A Forward current transfer ratio Conditions min typ max 100 VCE = 80V, VBE = 0 100 VCE = 30V, IB = 0 100 VCE = 60V, IB = 0 100 VEB = 6V, IC = 0 100 60 VCEO IC = 30mA, IB = 0 hFE1* VCE = 4V, IC = 1A 70 10 hFE2 VCE = 4V, IC = 3A VBE VCE = 4V, IC = 3A Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.375A Transition frequency fT VCE = 5V, IC = 0.2A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf FE1 1:Base 2:Collector 3:Emitter MT4 Type Package VCE = 60V, VBE = 0 Base to emitter voltage *h 2.5±0.2 (TC=25˚C) Parameter Collector cutoff C1.0 2.25±0.2 0.65±0.1 1.05±0.1 W 2 1.2±0.1 0.55±0.1 2.5±0.2 Collector power TC=25°C 1.0 90° V 80 VCEO Unit 5.0±0.1 10.0±0.2 2.5±0.2 ● High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping 13.0±0.2 4.2±0.2 ● 18.0±0.5 Solder Dip ● VCC = 50V µA µA µA V 80 IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, Unit 250 1.8 1.2 V V 30 MHz 0.3 µs 2.5 µs 0.2 µs Rank classification Rank Q P hFE1 70 to 150 120 to 250 Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification. 1 Power Transistors 2SD2137, 2SD2137A IC — VCE 5 15 (1) 10 5 IB=100mA 90mA 80mA 70mA 60mA 4 50mA 40mA 3 30mA 20mA 2 10mA 1 (2) 0 0 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 10 4 3 TC=100˚C 25˚C –25˚C 1.2 VCE=4V 1.6 300 25˚C –25˚C 100 30 10 3 2.0 Base to emitter voltage VBE (V) Cob — VCB 0.3 1 3 IE=0 f=1MHz TC=25˚C 100 30 10 3 1 0.01 0.01 0.03 0.1 10 30 100 3 1 ton tf 0.1 Collector to base voltage VCB (V) 300 30 10 3 0.1 0.3 2 1 3 10 Non repetitive pulse TC=25˚C 10 ICP 3 IC t=1ms 10ms 1 DC 0.3 0.1 0.01 1 10 100 0.03 0 3 VCE=5V f=10MHz TC=25˚C 30 tstg 0.3 1 Area of safe operation (ASO) Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=50V TC=25˚C 30 0.3 100 0.01 10 –25˚C Collector current IC (A) 0.03 3 0.03 1 0.01 0.03 10 ton, tstg, tf — IC Switching time ton,tstg,tf (µs) Collector output capacitance Cob (pF) 0.1 100 1 25˚C 0.1 Collector current IC (A) 1000 300 TC=100˚C 0.3 1000 TC=100˚C 1 0.01 0.03 0 0.8 1 Collector current IC (A) Transition frequency fT (MHz) Forward current transfer ratio hFE Collector current IC (A) 5 0.4 3 fT — IC VCE=4V 0 10 hFE — IC 1000 1 IC/IB=8 30 Collector to emitter voltage VCE (V) IC — VBE 6 2 12 100 2SD2137 20 Collector current IC (A) 0 2 Collector to emitter saturation voltage VCE(sat) (V) TC=25˚C (1) TC=Ta (2) Without heat sink (PC=2.0W) Collector current IC (A) Collector power dissipation PC (W) VCE(sat) — IC 6 3 Collector current IC (A) 4 1 3 10 30 2SD2137A PC — Ta 20 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SD2137, 2SD2137A Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3