Power Transistors 2SD2138, 2SD2138A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1418 and 2SB1418A Unit: mm 5.0±0.1 10.0±0.2 13.0±0.2 4.2±0.2 ■ Features ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Collector to 2SD2138 base voltage 2SD2138A Collector to 2SD2138 emitter voltage 2SD2138A Ratings 60 VCBO Unit 80 5 V Peak collector current ICP 4 A Collector current IC 2 A dissipation Ta=25°C Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter 2SD2138 current 2SD2138A Collector cutoff 2SD2138 current 2SD2138A Collector to emitter 2SD2138 voltage 2SD2138A Forward current transfer ratio 0.65±0.1 1.05±0.1 0.55±0.1 1 2 3 2.5±0.2 2.5±0.2 W 2 1:Base 2:Collector 3:Emitter MT4 Type Package 150 ˚C –55 to +150 ˚C C B E (TC=25˚C) ICBO ICEO IEBO Emitter cutoff current C1.0 2.25±0.2 Internal Connection 15 Symbol Collector cutoff 1.2±0.1 0.55±0.1 V VEBO PC 0.35±0.1 C1.0 60 Emitter to base voltage Collector power TC=25°C 90° V 80 VCEO 18.0±0.5 Solder Dip ● 2.5±0.2 High forward current transfer ratio hFE which has satisfactory linearity Allowing supply with the radial taping ● 1.0 Conditions min VCE = 60V, IE = 0 100 100 VCE = 30V, IB = 0 100 VCE = 40V, IB = 0 100 VEB = 5V, IC = 0 100 60 IC = 30mA, IB = 0 hFE1 VCE = 4V, IC = 1A 1000 VCE = 4V, IC = 2A 2000 hFE2 max VCE = 80V, IE = 0 VCEO * typ Unit µA µA µA V 80 10000 Base to emitter voltage VBE VCE = 4V, IC = 2A Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 8mA Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz 20 MHz Turn-on time ton IC = 2A, IB1 = 8mA, IB2 = –8mA, 0.4 µs Turn-off time toff VCC = 50V 4 µs *h FE2 2.8 2.5 V V Rank classification Rank hFE2 Q P 2000 to 5000 4000 to 10000 1 Power Transistors 2SD2138, 2SD2138A PC — Ta IC — VCE VCE(sat) — IC TC=25˚C (1) TC=Ta (2) Without heat sink (PC=2.0W) 5 15 (1) 10 5 IB=2mA 4 3 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA 2 1 (2) 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 IC — VBE Forward current transfer ratio hFE Collector current IC (A) 5 –25˚C 4 3 2 1 3 TC=–25˚C 1 25˚C 100˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 2 3 4 25˚C –25˚C 103 Base to emitter voltage VBE (V) 3 IE=0 f=1MHz TC=25˚C 300 100 30 10 3 0.3 1 3 10 1 Collector current IC (A) 3 10 30 Rth(t) — t Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 1000 10 ICP 3 t=1ms IC 1 DC 0.3 10ms 0.03 0.01 1 3 10 30 2SD2138A 2SD2138 0.1 100 300 Collector to emitter voltage VCE 1000 (V) 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 100 Collector to base voltage VCB (V) 10000 30 10 1 0.1 Area of safe operation (ASO) 100 1 1000 TC=100˚C 104 0.3 Collector current IC (A) VCE=4V 102 0.01 0.03 0 Collector current IC (A) 10 Cob — VCB VCE=4V 25˚C 1 IC/IB=250 30 hFE — IC 105 0 12 100 Collector to emitter voltage VCE (V) 6 TC=100˚C 10 Collector output capacitance Cob (pF) 0 2 Collector to emitter saturation voltage VCE(sat) (V) 6 Collector current IC (A) Collector power dissipation PC (W) 20 1 Time t (s) 10 102 103 104