Power Transistors 2SD2139 Silicon NPN triple diffusion planar type Unit: mm 18.0±0.5 Solder Dip Symbol Rating Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 6 V Peak collector current ICP 6 A Collector current IC 3 A Base current IB 1 A PC 15 W TC = 25°C Ta = 25°C 90˚ 1.2±0.1 C 1.0 1.48±0.2 ■ Absolute Maximum Ratings TC = 25°C Collector power dissipation 5.0±0.1 1.0±0.2 2.5±0.1 • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Allowing supply with the radial taping Parameter 10.0±0.2 13.0±0.2 ■ Features 4.2±0.2 For high-current amplification ratio, power amplification 2.25±0.2 0.65±0.1 0.65±0.1 0.35±0.1 1.05±0.1 0.55±0.1 0.55±0.1 2.5±0.2 2.5±0.2 1 2 3 1: Base 2: Collector 3: Emitter MT-4 (MT4 Type Package) 2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C Parameter Symbol Collector cutoff current Conditions ICBO VCB = 80 V, IE = 0 Min Typ Max Unit 100 µA ICEO VCE = 40 V, IB = 0 100 µA Emitter cutoff current IEBO VEB = 6 V, IC = 0 100 µA Collector to emitter voltage VCEO Forward current transfer ratio * Collector to emitter saturation voltage Transition frequency IC = 25 mA, IB = 0 60 hFE VCE = 4 V, IC = 0.5 A 500 VCE(sat) IC = 2 A, IB = 0.05 A fT VCE = 12 V, IC = 0.2 A, f = 10 MHz V 2 500 1 50 V MHz Note) *: Rank classification Rank hFE Q P O 500 to 1 000 800 to 1 500 1 200 to 2 500 1 2SD2139 Power Transistors PC T a IC VCE 1.2 IB=1.6mA 1.4mA (1) 10 5 0.8 0.8mA 0.6mA 0.6 0.4mA 0.4 0.2mA 4 3 TC=100˚C 2 25˚C 1 –25˚C 0 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 VCE(sat) IC 0.4 10000 Forward current transfer ratio hFE 3000 10 TC=100˚C TC=100˚C 1000 3 1 –25˚C 0.3 0.1 25˚C –25˚C 300 1.2 1.6 2.0 fT I C VCE=4V IC/IB=40 30 0.8 Base to emitter voltage VBE (V) hFE IC 100 0.03 0 Collector to emitter voltage VCE (V) 1000 Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 5 (2) 0 100 30 VCE=12V f=10MHz TC=25˚C 300 100 30 10 3 25˚C 0.01 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 10 Collector current IC (A) 0.1 0.3 1 3 10 Collector current IC (A) Cob VCB Area of safe operation (ASO) IE=0 f=1MHz TC=25˚C Collector current IC (A) 300 100 30 10 Non repetitive pulse TC=25˚C 30 10 ICP t=10ms 3 1ms IC DC 1 0.3 0.1 3 0.03 1 0.01 1 3 10 30 100 Collector to base voltage VCB (V) 1 3 10 30 100 300 1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 100 1000 Collector output capacitance Cob (pF) VCE=4V 1.0mA 0.2 0 2 TC=25˚C 1.2mA 1.0 15 IC VBE 6 Collector current IC (A) (1) TC=Ta (2) Without heat sink (PC=2.0W) Collector current IC (A) Collector power dissipation PC (W) 20 1000 Collector to emitter voltage VCE (V) 10 Power Transistors 2SD2139 Rth(t) t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. 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