DATA SHEET SILICON POWER TRANSISTOR 2SD2164 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2164 is a single power transistor developed especially PACKAGE DRAWING (UNIT: mm) for high hFE. This transistor is ideal for simplifying drive circuits and reducing power dissipation because its hFE is as high as that of Darlington transistors, but it is a single transistor. In addition, this transistor features a small resin insulated package, thus contributing to high-density mounting and mounting cost reduction. FEATURES • High hFE and low VCE(sat): hFE ≅ 1,300 TYP. (VCE = 5.0 V, IC = 0.5 A) VCE(SAT) ≅ 0.3 V TYP. (IC = 2.0 A, IB = 20 mA) • Full mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25°°C) (OHFWURGH&RQQHFWLRQ %DVH Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7.0 V Collector current (DC) IC(DC) 3.0 A Collector current (pulse) Base current (DC) IC(pulse) Note 5.0 &ROOHFWRU (PLWWHU A IB(DC) 0.5 A Total power dissipation PT (TC = 25°C) 20 W Total power dissipation PT (TA = 25°C) 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note PW ≤ 300 µs, duty cycle ≤ 10% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15606EJ3V0DS00 (3rd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SD2164 ELECTRICAL CHARACTERISTICS (TA = 25°°C) Parameter Symbol Conditions Collector cutoff current ICBO VCB = 60 V, IE = 0 A Emitter cutoff current IEBO VEB = 7.0 V, IC = 0 A DC current gain hFE1 DC current gain hFE2 TYP. VCE = 5.0 V, IC = 0.5 A Note 800 1,300 VCE = 5.0 V, IC = 3.0 A Note 500 1,000 MAX. Unit 10 µA 10 µA 3,200 VCE(sat) IC = 2.0 A, IB = 20 mANote Base saturation voltage VBE(sat) IC = 2.0 A, IB = 20 mA Note Gain bandwidth product fT VCE = 5.0 V, IC = 0.1 A 110 MHz VCB = 10 V, IE = 0 A, f = 1.0 MHz 50 pF Collector saturation voltage Collector capacitance Cob 1RWH Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE1 CLASSIFICATION 2 MIN. Marking M L K hFE1 800 to 1,600 1,000 to 2,000 1,600 to 3,200 Data Sheet D15606EJ3V0DS 0.3 0.5 V 1.2 V 2SD2164 ,&'HUDWLQJG7 7RWDO3RZHU'LVVLSDWLRQ37: TYPICAL CHARACTERISTICS (TA = 25°°C) &DVH7HPSHUDWXUH7&°& &DVH7HPSHUDWXUH7&°& &ROOHFWRU&XUUHQW,&$ 6LQJOHSXOVH 7UDQVLHQW7KHUPDO5HVLVWDQFHUW°&: &ROOHFWRUWR(PLWWHU9ROWDJH9&(9 :LWKRXWKHDWVLQN :LWKLQILQLWHKHDWVLQN 3XOVH:LGWK3:V Data Sheet D15606EJ3V0DS 3 2SD2164 '&&XUUHQW*DLQK)( &ROOHFWRU&XUUHQW,&$ 3XOVHWHVW 3XOVHWHVW &ROOHFWRU&XUUHQW,&$ *DLQ%DQGZLGWK3URGXFWI70+] %DVH6DWXUDWLRQ9ROWDJH9%(VDW9 &ROOHFWRU6DWXUDWLRQ9ROWDJH9&(VDW9 &ROOHFWRUWR(PLWWHU9ROWDJH9&(9 &ROOHFWRU&XUUHQW,&$ &ROOHFWRU&DSDFLWDQFH&RES) &ROOHFWRU&XUUHQW,&$ &ROOHFWRUWR%DVH9ROWDJH9&%9 4 Data Sheet D15606EJ3V0DS 2SD2164 [MEMO] Data Sheet D15606EJ3V0DS 5 2SD2164 • The information in this document is current as of July, 2001. The information is subject to change without notice. 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