Transistor 2SD661, 2SD661A Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm 6.9±0.1 ■ Absolute Maximum Ratings Parameter 2SD661 base voltage 2SD661A Collector to 2SD661 Ratings Emitter to base voltage VEBO Peak collector current 1.0 4.5±0.1 4.1±0.2 7 Unit 2 2.5 35 1 2.5 V 55 7 V ICP 200 mA Collector current IC 100 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 0.45±0.05 V 55 VCEO 0.55±0.1 3 35 VCBO emitter voltage 2SD661A 0. (Ta=25˚C) Symbol Collector to 0.85 1.25±0.05 ● Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0 R ● 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 2.4±0.2 2.0±0.2 3.5±0.1 1.5 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package (Ta=25˚C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 20V, IE = 0 0.1 µA ICEO VCE = 20V, IB = 0 1 µA VCBO IC = 10µA, IE = 0 VCEO IC = 2mA, IB = 0 Emitter to base voltage VEBO IE = 10µA, IC = 0 Forward current transfer ratio hFE* VCE = 10V, IC = 2mA Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 10mA Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz Noise voltage NV Collector cutoff current Collector to base 2SD661 voltage 2SD661A Collector to emitter 2SD661 voltage 2SD661A *h FE VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT 35 V 55 35 V 55 7 V 210 650 1 200 V MHz 150 mV Rank classification Rank R S T hFE 210 ~ 340 290 ~ 460 360 ~ 650 1 2SD661, 2SD661A Transistor PC — Ta IC — VCE IC — I B 160 160 Ta=25˚C VCE=5V Ta=25˚C 400 300 200 100 0 140 120 IB=350µA 300µA 100 250µA 80 200µA 60 150µA 40 100µA 20 50µA 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 2 4 6 8 10 Collector current IC (mA) Base current IB (µA) 100 500 400 300 200 Ta=75˚C –25˚C 80 60 40 20 100 0 0 0.6 0.8 1.0 0 Base to emitter voltage VBE (V) 0.4 0.8 1.2 hFE — IC Transition frequency fT (MHz) Forward current transfer ratio hFE 25˚C –25˚C 240 120 0.3 1 3 10 30 Collector current IC (mA) 100 1.6 2.0 VCB=5V Ta=25˚C 400 300 200 100 0 – 0.1 – 0.3 –1 –3 0.4 0.5 IC/IB=10 10 3 1 0.3 Ta=75˚C 0.1 25˚C –25˚C 0.03 0.01 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Cob — VCB VCE=5V Ta=75˚C 0.3 30 fT — I E 500 600 0.2 100 Base to emitter voltage VBE (V) 720 0 0.1 0.1 Base current IB (mA) Collector to emitter saturation voltage VCE(sat) (V) VCE=5V 25˚C 600 360 0 VCE(sat) — IC 700 480 40 12 120 VCE=5V Ta=25˚C 0.4 60 IC — VBE 800 0.2 80 Collector to emitter voltage VCE (V) IB — VBE 0 100 0 0 –10 –30 Emitter current IE (mA) –100 20 Collector output capacitance Cob (pF) 20 120 20 0 0 2 Collector current IC (mA) 140 Collector current IC (mA) Collector power dissipation PC (mW) 500 IE=0 f=1MHz Ta=25˚C 16 12 8 4 0 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) 2SD661, 2SD661A Transistor NV — VCE NV — VCE 160 IC=1mA GV=80dB Function=FLAT Rg=100kΩ 100 80 22kΩ 40 4.7kΩ 240 IC=1mA GV=80dB Function=RIAA 180 120 22kΩ 60 3 10 30 100 1 Collector to emitter voltage VCE (V) 3 10 30 0.03 Rg=100kΩ 120 22kΩ 60 VCE=10V GV=80dB Function=RIAA 120 100 80 60 IC=1mA 40 Collector current IC (mA) 1 240 IC=1mA 180 120 0.5mA 60 0.1mA 0.1mA 20 0 0.3 1 300 0.5mA 4.7kΩ 0.3 NV — Rg Noise voltage NV (mV) Noise voltage NV (mV) 240 0.1 Collector current IC (mA) VCE=10V GV=80dB Function=FLAT 140 0.1 22kΩ 40 0 0.01 100 160 VCE=10V GV=80dB Function=RIAA 0.03 60 NV — Rg 300 0 0.01 Rg=100kΩ 80 Collector to emitter voltage VCE (V) NV — IC 180 100 20 0 1 120 4.7kΩ 4.7kΩ 20 0 VCE=10V GV=80dB Function=FLAT 140 Noise voltage NV (mV) 120 60 160 Rg=100kΩ Noise voltage NV (mV) Noise voltage NV (mV) 140 Noise voltage NV (mV) NV — IC 300 0 1 3 10 30 100 Signal source resistance Rg (kΩ) 1 3 10 30 100 Signal source resistance Rg (kΩ) 3