PF08103A MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone ADE-208-685B (Z) 3rd Edition Apr. 1999 Application • Dual band amplifier for E-GSM900 (880 to 915 MHz) and DCS1800 (1710 to 1785 MHz). • For 4.8 V nominal battery use Features • • • • • • 1 in / 2 out dual band amplifier Simple external circuit including output matching circuit Simple band switching and power control High gain 3stage amplifier : +4.5 dBm input Lead less thin & Small package : 11 × 13.75 × 1.8 mm High efficiency : 48% Typ at 34.5 dBm for E-GSM 36% Typ at 31.5 dBm for DCS1800 PF08103A Internal Circuit Block Diagram Vdd1 Vdd2 Pout GSM Pin Pout DCS Bias circuit VCTL VCTL Vapc Band Select and Power Control (H: 2 V Min, L: 0.3 V Max) Operating Mode VCTL VCTL Vapc GSM Tx ON H L Control DCS Tx ON L H Control Tx OFF L L < 0.2 V Current of Control Pin Control Pin Equivalent Input Circuit Control Current VCTL 160 µA Max at 3 V VCTL 80 µA Max at 3 V Vapc 3 mA Max at 3 V 2 PF08103A Internal Diagram and External Circuit 4 Pout GSM 8 Pin 5 Pout DCS Z1 Z2 Z3 Bias circuit 1 6 Vdd1 2 7 VCTL Vapc Vdd2 C3 C5 C6 C7 C1 C4 C2 FB Pin 3 VCTL Vdd1 VCTL FB VCTL FB Vapc Vdd2 Pout DCS Pout GSM Note: C1 = C2 = 4.7 µF TANTALUM ELECTROLYTE C3 = C4 = 0.01 µF CERAMIC CHIP C5 = C6 = C7 = 1000 pF CERAMIC CHIP FB = FERRITE BEAD BLO1RN1-A62-001 (MURATA) or equivalent Z1 = Z2 = Z3 = 50 Ω MICRO STRIP LINE 3 PF08103A Absolute Maximum Ratings (Tc = 25°C) Item Symbol Rating Unit Supply voltage VDD 8.5 V Supply current I DD GSM 3 A I DD DCS 3 A VCTL , VCTL voltage VCTL, VCTL 4 V Vapc voltage Vapc 4 V Input power Pin 10 dBm Operating case temperature Tc (op) –30 to +100 °C Storage temperature Tstg –30 to +100 °C Output power Pout GSM 5 W Pout DCS 3 W Note: The maximum ratings shall be valid over both the E-GSM-band (880-915 MHz), and the DCS-band (1710-1785 MHz). Electrical Characteristics for DC (Tc = 25°C) Item Symbol Min Typ Max Unit Test Condition Drain cutoff current Ids — — 20 µA Vdd = 6.0 V, Vapc = 0 V, VCTL = 0 V, VCTL = 0 V — — 300 µA Vdd = 8.5 V, Vapc = 0 V, VCTL = 0 V, VCTL = 0 V, Tc = –20 to +80°C VCTL control current I CTL — 100 160 µA VCTL = 3.0 V VCTL control current I CTL — 50 80 µA VCTL = 3.0 V 4 PF08103A Electrical Characteristics for GSM900 mode (Tc = 25°C) Test conditions unless otherwise noted: f = 880 to 915MHz, Vdd1 = Vdd2 = 4.8V, Pin = +4.5dBm, V CTL = 2.0V, VCTL = 0.3V, Rg = Rl = 50Ω, Tc = 25°C, Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used. Item Symbol Min Typ Max Unit Frequency range f 880 — 915 MHz Control voltage range Vapc 0.2 — 3.0 V Vapc control current Iapc — — 3 mA Vapc = 3.0V Total efficiency ηT 43 48 — % Pout 2nd harmonic distortion 2nd H.D. — –45 –35 dBc Vapc = control 3rd harmonic distortion 3rd H.D. — –45 –35 dBc 4th~8th harmonic distortion 4th~8th H.D. — — –35 dBc Input VSWR VSWR (in) — 2 3 — Output power (1) Pout (1) 35.0 35.7 — dBm Vapc = 3.0V Output power (2) Pout (2) 33.0 34.0 — dBm Vdd = 4.2V, Vapc = 3.0V, Tc = +85°C, Pin = +3dBm Isolation — — –40 –20 dBm Vapc = 0.2 V Isolation at DCS RF-output when GSM is active — — –30 –20 dBm Pout GSM = 34.5dBm (GSM mode) Measured at f = 1760 to 1830MHz Switching time tr, tf — 1 2 µs Pout Stability — No parasitic oscillation All spuriouses < –36 dBm — VDD = 4.2 to 6.3V, Pout ≤ 35.0dBm, Vapc ≤ 3.0V GSM pulse. Rg = 50Ω, Tc = –20 to +85°C, Output VSWR = 6 : 1 All phases, RES BW = 3MHz Load VSWR tolerance — No degradation or Permanent degradation — VDD = 4.2 to 6.3V, Pout GSM ≤ 35.0dBm, Vapc ≤ 3.0V GSM pulse. Rg = 50Ω, t = 30sec., Tc = –20 to +85°C, Output VSWR = 10 : 1 All phases Noise power Pnoise1 — — –73 dBm f0 = 915MHz, frx = f0 +10MHz Pout GSM = 35dBm, RES BW = 100kHz Pnoise2 — — –85 dBm f0 = 915MHz, frx = f0 +20MHz Pout GSM = 35dBm, RES BW = 100kHz Pnoise3 — — –77 dBm frx = 1805 to 1880MHz Pout GSM = 35dBm, RES BW = 100kHz — — — 200 dB/V Pout Slope Pout/Vapc Test Condition GSM GSM GSM = 34.5dBm, = –15 to 35.0dBm = 0 to 35dBm 5 PF08103A Electrical Characteristics for DCS1800 mode (Tc = 25°C) Test conditions unless otherwise noted: f = 1710 to 1785MHz, Vdd1 = Vdd2 = 4.8V, Pin = +4.5dBm, V CTL = 0.3V, VCTL = 2.0V, Rg = Rl = 50Ω, Tc = 25°C, Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used. Item Symbol Min Typ Max Unit Frequency range f 1710 — 1785 MHz Control voltage range Vapc 0.2 — 3.0 V Vapc control current Iapc — — 3 mA Vapc = 3.0V Total efficiency ηT 33 36 — % Pout 2nd harmonic distortion 2nd H.D. — –45 –35 dBc Vapc = control 3rd harmonic distortion 3rd H.D. — –45 –35 dBc 4th~8th harmonic distortion 4th~8th H.D. — — –35 dBc Input VSWR VSWR (in) — 3 5 — Output power (1) Pout (1) 32.5 33.0 — dBm Vapc = 3.0V Output power (2) Pout (2) 31 31.5 — dBm Vdd = 4.8V, Vapc = 3.0V, Tc = +85°C, Pin = +3dBm Isolation — — –35 –30 dBm Vapc = 0.2V Switching time tr, tf — 1 2 µs Pout Stability — No parasitic oscillation — VDD = 4.2 to 6.3V, Pout DCS ≤ 32.5dBm, Vapc ≤ 3.0V DCS pulse. Rg = 50Ω, Tc = –20 to +85°C, Output VSWR = 6 : 1 All phases Load VSWR tolerance — No degradation — VDD = 4.2 to 6.3V, Pout DCS ≤ 32.5dBm, Vapc ≤ 3.0V DCS pulse. Rg = 50Ω, t = 30sec., Tc = –20 to +85°C, Output VSWR = 10 : 1 All phases Noise power Pnoise1 — — –77 dBm f0 = 1785MHz, frx = f0 +20MHz, Pout DCS = 31.5dBm, RES BW = 30kHz Pnoise2 — — –74 dBm frx = 925 to 935MHz, Pout DCS = 31.5dBm, RES BW = 30kHz Pnoise3 — — –85 dBm frx = 935 to 960MHz, Pout DCS = 31.5dBm, RES BW = 30kHz Slope Pout/Vapc — — — 200 dB/V Pout Intermodulation — — — –20 dBm Pout = 31.5dBm, Interferer.CW f0 +800kHz, Pinterfer = –9dBm, RES BW = 300kHz, Measure at f0 –800kHz 6 Test Condition DCS DCS DCS = 31.5dBm, = –15 to 32.0dBm = 0 to 32.0dBm PF08103A Package Dimensions Unit: mm 1.8 ± 0.2 7 G 6 5 G 11.0 ± 0.3 (10.8) 11.0 ± 0.3 8 G 1 2 G 3 (Upper side) 4 8 7 G 65 G 13.75 ± 0.3 G (3.40) (1.40) (3.70) (3.70) (2.50) (2.50) (Bottom side) (1.40) (1.40) (1.40) (1.40) (1.40) (2.40) (2.40) 11.0 ± 0.3 (1.60)(1.60) (3.40) (1.60)(1.60) 1 (1.40) 13.75 ± 0.3 (5.40) (5.40) (3.30) (3.30) 2 G 3 4 Pin arrangement 1 : VCTL 2 : VCTL 3 : Vdd2 4 : Pout GSM 5 : Pout DCS 6 : Vdd1 7 : Vapc 8 : Pin G : GND Remark: Coplanarity of bottom side of terminals are less than 0 ± 0.1mm. 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